GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

Semiconductor wires and ribbons for high-performance flexible electronics.

This article reviews the properties, fabrication and assembly of inorganic semiconductor materials that can be used as active building blocks to form high-performance transistors and circuits for flexible and bendable large-area electronics. Obtaining high performance on low temperature polymeric substrates represents a technical challenge for macroelectronics. Therefore, the fabrication of high quality inorganic materials in the form of wires, ribbons, membranes, sheets, and bars formed by bottom-up and top-down approaches, and the assembly strategies used to deposit these thin films onto plastic substrates will be emphasized. Substantial progress has been made in creating inorganic semiconducting materials that are stretchable and bendable, and the description of the mechanics of these form factors will be presented, including circuits in three-dimensional layouts. Finally, future directions and promising areas of research will be described.

Stamp collapse in soft lithography.

We have studied the so-called roof collapse in soft lithography. Roof collapse is due to the adhesion between the PDMS stamp and substrate, and it may affect the quality of soft lithography. Our analysis accounts for the interactions of multiple punches and the effect of elastic mismatch between the PDMS stamp and substrate. A scaling law among the stamp modulus, punch height and spacing, and work of adhesion between the stamp and substrate is established. Such a scaling law leads to a simple criterion against the unwanted roof collapse. The present study agrees well with the experimental data.

Improved surface chemistries, thin film deposition techniques, and stamp designs for nanotransfer printing.

Nanotransfer printing represents an additive approach for patterning thin layers of solid materials with nanometer resolution. The surface chemistries, thin film deposition techniques, and stamp designs are all important for the proper operation of this method. This paper presents some details concerning processing procedures and other considerations needed for patterning two- and three-dimensional nanostructures with low density of defects and minimal distortions.

Elastomeric transistor stamps: reversible probing of charge transport in organic crystals.

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.