Ferromagnetism in two-dimensional metal dibromides induced by hole-doping.

Using spin-polarized first-principles calculations based on density functional theory, we study the stability, electronic properties and magnetic behavior induced by hole-doping of two-dimensional (2D) PbBr2 and HgBr2. Although inherently nonmagnetic, these materials can exhibit stable ferromagnetic order when hole-doped at densities above a few 1013 cm-2. We also examined the impact of intrinsic and extrinsic defects on inducing hole-doping and subsequent ferromagnetism. Our findings suggest that p-type doping can be achieved by Pb and Hg vacancies and Br antisites, but the latter behaves as deep acceptors. Among the possible dopants we considered, Li substituting Pb or Hg, and S replacing Br in 2D HgBr2, can produce shallow acceptor states near the valence band edges and potentially result in a stable ferromagnetic order in these 2D dibromides.

Interaction of graphene with Aunclusters: a first-principles study.

The interaction between Aun(n= 1-6) clusters and graphene is studied using first-principles simulations, based on density functional theory. The computed binding energy between Aunand graphene depends on the number of atoms in the cluster and lies between -0.6 eV and -1.7 eV, suggesting (weak) chemisorption of the clusters on graphene, rather than physisorption. Overall, the electronic properties, spin-orbit interaction and spin texture, as well as the transport properties of graphene strongly depend on the precise size of the Aunclusters. Doping of graphene is predicted for clusters with an odd number of Au atoms, due to overlap between Ausand carbonpzstates close to the Fermi level. On the other hand, there is no charge transfer between even size Au clusters and graphene, but a gap is formed at the Dirac cone, due to the breaking of the pseudo spin inversion symmetry of graphene's lattice. The adsorbed Aunclusters induce spin-orbit interactions as well as spin and pseudo spin interactions in graphene, as indicated by the splitting of the electronic band structure. A hedgehog spin texture is also predicted for adsorbed clusters with an even number of Au atoms. Ballistic transport simulations are performed to study the influence of the adsorbed clusters on graphene's electronic transport properties. The influence of the cluster on the electron transmission across the structure depends on the mixing of the valence orbitals in the transport energy window. In the specific case of the Au3/graphene system, the adsorbed clusters reduce the transmission and the conductance of graphene. The Au3clusters act as 'scattering centers' for charge carriers, in agreement with recent experimental studies.

On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides.

Layered materials held together by weak van der Waals (vdW) interactions are a promising class of materials in the field of nanotechnology. Besides the potential for single layers, stacking of various vdW layers becomes even more promising since unique properties can hence be precisely engineered. The synthesis of stacked vdW layers, however, remains to date, hardly understood. Therefore, in this work, the vdW epitaxy of transition metal dichalcogenides (TMDs) on single-crystalline TMD templates is investigated in depth. It is demonstrated that the role of lattice mismatch is insignificant. More importantly is the role of surface energy, calculated using density functional theory, which plays an essential role in the activation energy for adatom diffusion, hence nucleation density. This in turn correlates with defect density since the stacking sequence in vdW epitaxy is generally poorly controlled. Moreover, the vapor pressure of the transition metal is also found to correlate with adatom diffusion. Consequently, the proposed study enables important and new insight in the vdW epitaxy of multilayer 2D homo-/heterostructures.

Exploration of new ferromagnetic, semiconducting and biocompatible Nb3X8 (X = Cl, Br or I) monolayers with considerable visible and infrared light absorption.

Ferromagnetic character and biocompatible properties have become key factors for developing next-generation spintronic devices and show potential in biomedical applications. Unfortunately, the Mn-containing monolayer is not biocompatible though it has been extensively studied, and the Cr-containing monolayer is not environmental friendly, although these monolayers are ferromagnetic. Herein, we systematically investigated new types of 2D ferromagnetic monolayers Nb3X8 (X = Cl, Br or I) by means of first principles calculations together with mean field approximation based on the classical Heisenberg model. The small cleavage energy and high in-plane stiffness have been calculated to evaluate the feasibility of exfoliating the monolayers from their layered bulk phase. Spin-polarized calculations together with self-consistently determined Hubbard U were utilized to assess a strong correlation energy, which demonstrated that Nb3X8 (X = Cl, Br or I) monolayers are ferromagnetic. The calculated Curie temperatures for Nb3Cl8, Nb3Br8 and Nb3I8 were 31, 56 and 87 K, respectively, which may be increased by external strain, or electron or hole doping. Moreover, the Nb3X8 (X = Cl, Br or I) monolayers exhibited strong visible and infrared light absorption. The biocompatibility, ferromagnetism and considerable visible and infrared light absorption render the Nb3X8 (X = Cl, Br or I) monolayers with great potential application in next-generation biocompatible spintronic and optoelectronic devices.

Electronic structure and optical properties of graphene/stanene heterobilayer.

The structural, electronic and optical properties of the graphene hybrid with stanene, the tin counterpart of graphene, are investigated by means of density functional calculation with the observation of band gap opening and enhanced visible light response. The lattice mismatch between graphene and stanene is taken into consideration and several stacking methods for model construction are proposed to study the possible effects. The Dirac feature can be observed in this bilayer system with relatively stronger interlayer interaction than weak van der Waals forces, which is ascribed to the unsaturated p orbital of stanene. Despite the mutual semi-metal nature of graphene and stanene, it is significant to note a band gap opening and the electrical neutrality of the bilayer. The combination of high carrier mobility of graphene and the excellent spin Hall effect of stanene is expected to coexist in the bilayer structure. In addition, we found that the stanene monolayer has a relatively lower work function than graphene and more importantly, it exhibits more pronounced optical absorption than graphene. The results indicate that a graphene/stanene heterobilayer will facilitate the performance of stanene related spintronic devices and is therefore a good candidate for photoelectronic devices.

Tuning the electronic properties and work functions of graphane/fully hydrogenated h-BN heterobilayers via heteronuclear dihydrogen bonding and electric field control.

Using density functional theory calculations with van der Waals correction, we show that the electronic properties (band gap and carrier mobility) and work functions of graphane/fully hydrogenated hexagonal boron nitride (G/fHBN) heterobilayers can be favorably tuned via heteronuclear dihydrogen bonding (C-HH-B and C-HH-N) and an external electric field. Our results reveal that G/fHBN heterobilayers have different direct band gaps of ∼1.2 eV and ∼3.5 eV for C-HH-B and C-HH-N bonds, respectively. In particular, these band gaps can be effectively modulated by altering the direction and strength of the external electric field (E-field), and correspondingly exhibit a semiconductor-metal transition. The conformation and stability of G/fHBN heterobilayers show a strong dependence on the heteronuclear dihydrogen bonding. Fantastically, these bonds are stable enough under a considerable external E-field as compared with other van der Waals (vdW) 2D layered materials. The mobilities of G/fHBN heterobilayers we predicted are hole-dominated, reasonably high (improvable up to 200 cm(2) V(-1) s(-1)), and extremely isotropic. We also demonstrate that the work function of G/fHBN heterobilayers is very sensitive to the external E-field and is extremely low. These findings make G/fHBN heterobilayers very promising materials for field-effect transistors and light-emitting devices, and inspire more efforts in the development of 2D material systems using weak interlayer interactions and electric field control.

Effect of multilayer structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide.

Development of nanoelectronics requires two-dimensional (2D) systems with both direct-bandgap and tunable electronic properties as they act in response to the external electric field (E-field). Here, we present a detailed theoretical investigation to predict the effect of atomic structure, stacking order and external electric field on the electrical properties of few-layer boron-phosphide (BP). We demonstrate that the splitting of bands and bandgap of BP depends on the number of layers and the stacking order. The values for the bandgap show a monotonically decreasing relationship with increasing layer number. We also show that AB-stacking BP has a direct-bandgap, while ABA-stacking BP has an indirect-bandgap when the number of layers n > 2. In addition, for a bilayer and a trilayer, the bandgap increases (decreases) as the electric field increases along the positive direction of the external electric field (E-field) (negative direction). In the case of four-layer BP, the bandgap exhibits a nonlinearly decreasing behavior as the increase in the electric field is independent of the electric field direction. The tunable mechanism of the bandgap can be attributed to a giant Stark effect. Interestingly, the investigation also shows that a semiconductor-to-metal transition may occur for the four-layer case or more layers beyond the critical electric field. Our findings may inspire more efforts in fabricating new nanoelectronics devices based on few-layer BP.