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1.
Opt Express ; 29(15): 24032-24044, 2021 Jul 19.
Article in English | MEDLINE | ID: mdl-34614656

ABSTRACT

Laser-induced damage threshold of transparent conductors, such as Indium Tin Oxide (ITO), is limited by their high optical absorption due to free carriers. However, the effective absorption of a transparent conductor thin film can be reduced by an order of magnitude, without changing the electrical characteristics of the film, when placed in a low electric field section of a multilayer coating. A Fabry-Perot thin film interference filter has both high transmittance and low electric field positions, so it is an ideal thin film structure for this application. Although Fabry-Perot interference filters are not known as particularly high laser-induced damage resistant coatings due to their resonant characteristics, a laser-induced damage threshold (LIDT) improvement of up to 8× was observed with this technique compared to single layer ITO coatings fabricated using either radio frequency magnetron sputtering or electron-beam deposition. Additionally, an approximately 4× LIDT improvement for a Fabry-Perot interference filter has been observed by the addition of ITO into the multilayer structure.

2.
Opt Express ; 24(16): 17616-34, 2016 Aug 08.
Article in English | MEDLINE | ID: mdl-27505731

ABSTRACT

Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.

3.
Appl Opt ; 53(4): A291-6, 2014 Feb 01.
Article in English | MEDLINE | ID: mdl-24514230

ABSTRACT

Substrate defect planarization has been shown to increase the laser resistance of 1053 nm mirror coatings to greater than 100 J/cm2, an increase of 20-fold, when tested with 10 ns laser pulses. Substrate surface particles that are overcoated with optical interference mirror coatings become nodular defects, which behave as microlenses intensifying light into the defect structure. By a discrete process of angle-dependent ion etching and unidirectional ion-beam deposition, substrate defects can be reduced in cross-sectional area by over 90%.

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