Fabrication of Co-Sb Junction Nanowires by Galvanostatic Electrodeposition.

This work presents the synthesis of CoSb3 one-dimensional (1D) thermoelectric nanomaterials using electrodeposition under galvanostatic conditions and polycarbonate membranes as a template (50 nm diameter pores). Cyclic voltammetry measurements have been performed to get preliminary information on the electrochemical reduction process of the involved species. Different current density values in the range 1-4 mA cm-2 have been applied, leading to the formation of nanowires (NWs) and micro- and nanomushroom caps, as evidenced by the scanning electron microscopy and scanning transmission electron microscopy investigations. Through fine-tuning of the current density the desired Co/Sb atomic ratio could be achieved. Energy-dispersive X-ray spectroscopy analysis showed the formation of CoSb3 at 1.4 mA cm-2, and it has also been confirmed by high-resolution transmission electron microscopy and micro-Raman spectroscopy. In this work, we present for the first time the fabrication of a CoSb3-CoxSby heterojunction on the same NW exhibiting Sb-rich and Co-rich alloy segments, prepared by electrodeposition from the same electrolyte by simply varying the applied current density.

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings.

This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 °C, 1175 °C, and 1825 °C. Under these post-implantation annealing conditions, the electrical activation of the Al dopant species increased from 39% to 56%. The Ti/Al/Ni contacts showed an Ohmic behavior after annealing at 950 °C. The specific contact resistance ρc could be lowered by a factor of 2.6 with the increase of the post-implantation annealing temperature. The result can be useful for application in device fabrication. Moreover, the dependence of ρc on the active acceptor concentration followed the thermionic field emission model, with a barrier height of 0.63 eV.