Field-position dependent apodization in dark-field digital holographic microscopy for semiconductor metrology.

Measuring overlay between two layers of semiconductor devices is a crucial step during electronic chip fabrication. We present dark-field digital holographic microscopy that addresses various overlay metrology challenges that are encountered in the semiconductor industry. We present measurement results that show that the point-spread function of our microscope depends on the position in the field-of-view. We will show that this novel observation can be explained by a combination of the finite bandwidth of the light source and a wavelength-dependent focal length of the imaging lens. Moreover, we will also present additional experimental data that supports our theoretical understanding. Finally, we will propose solutions that reduce this effect to acceptable levels.

Aberration calibration and correction with nano-scatterers in digital holographic microscopy for semiconductor metrology.

Overlay metrology measures pattern placement between two layers in a semiconductor chip. The continuous shrinking of device dimensions drives the need to explore novel optical overlay metrology concepts that can address many of the existing metrology challenges. We present a compact dark-field digital holographic microscope that uses only a single imaging lens. Our microscope offers several features that are beneficial for overlay metrology, like a large wavelength range. However, imaging with a single lens results in highly aberrated images. In this work, we present an aberration calibration and correction method using nano-sized point scatterers on a silicon substrate. Computational imaging techniques are used to recover the full wavefront error, and we use this to correct for the lens aberrations. We present measured data to verify the calibration method and we discuss potential calibration error sources that must be considered. A comparison with a ZEMAX calculation is also presented to evaluate the performance of the presented method.

Diffraction-based overlay metrology using angular-multiplexed acquisition of dark-field digital holograms.

In semiconductor device manufacturing, optical overlay metrology measures pattern placement between two layers in a chip with sub-nm precision. Continuous improvements in overlay metrology are needed to keep up with shrinking device dimensions in modern chips. We present first overlay metrology results using a novel off-axis dark-field digital holographic microscopy concept that acquires multiple holograms in parallel by angular multiplexing. We show that this concept reduces the impact of source intensity fluctuations on the noise in the measured overlay. With our setup we achieved an overlay reproducibility of 0.13 nm and measurements on overlay targets with known programmed overlay values showed good linearity of R2= 0.9993. Our data show potential for significant improvement and that digital holographic microscopy is a promising technique for future overlay metrology tools.

Impact of coherence length on the field of view in dark-field holographic microscopy for semiconductor metrology: theoretical and experimental comparisons.

Semiconductor manufacturers continue to increase the component densities on computer chips by reducing the device dimensions to less than 10 nm. This trend requires faster, more precise, and more robust optical metrology tools that contain complex and high-precision optics with challenging imaging requirements. Here, we present dark-field digital holographic microscopy as a promising optical metrology technique that uses optics with acceptable complexity. A theoretical analysis and an experimental demonstration of this technique are presented, showing the impact of the coherence length of the light source on the field of view. Finally, we also present the first holographically obtained images of metrology targets.