Nonlinear reflectivity of AlGaInP SESAMs for mode locking in the red spectral range.

Mode-locked vertical external-cavity semiconductor lasers (VECSELs) are a wavelength-versatile laser that relies on a semiconductor saturable absorber mirror (SESAM) to initiate pulsed emission while simultaneously significantly influencing the pulse's properties. A SESAM can be characterized using a nonlinear reflectivity setup, realized here in the red spectral range around 660 nm and achieving a moderate peak-to-peak variation of 0.17%. We use our home-built mode-locked VECSEL to reach a high maximum fluence up to 430 µJ/cm2 with strongly chirped 7.5 ps pulses. This allows the first-of-its-kind characterization of GaInP quantum well SESAMs, thereby revealing saturation fluences of 38 µJ/cm2 and 34 µJ/cm2 with modulation depths of 5% and 10.3% for SESAMs comprising one or two active quantum wells, respectively. For all structures, a nonsaturable loss of 2.8% is found and attributed to scattering loss.

Chem/bio sensing with non-classical light and integrated photonics.

Modern quantum technology currently experiences extensive advances in applicability in communications, cryptography, computing, metrology and lithography. Harnessing this technology platform for chem/bio sensing scenarios is an appealing opportunity enabling ultra-sensitive detection schemes. This is further facilliated by the progress in fabrication, miniaturization and integration of visible and infrared quantum photonics. Especially, the combination of efficient single-photon sources together with waveguiding/sensing structures, serving as active optical transducer, as well as advanced detector materials is promising integrated quantum photonic chem/bio sensors. Besides the intrinsic molecular selectivity and non-destructive character of visible and infrared light based sensing schemes, chem/bio sensors taking advantage of non-classical light sources promise sensitivities beyond the standard quantum limit. In the present review, recent achievements towards on-chip chem/bio quantum photonic sensing platforms based on N00N states are discussed along with appropriate recognition chemistries, facilitating the detection of relevant (bio)analytes at ultra-trace concentration levels. After evaluating recent developments in this field, a perspective for a potentially promising sensor testbed is discussed for reaching integrated quantum sensing with two fiber-coupled GaAs chips together with semiconductor quantum dots serving as single-photon sources.

Quantum-Dot Single-Photon Sources for Entanglement Enhanced Interferometry.

Multiphoton entangled states such as "N00N states" have attracted a lot of attention because of their possible application in high-precision, quantum enhanced phase determination. So far, N00N states have been generated in spontaneous parametric down-conversion processes and by mixing quantum and classical light on a beam splitter. Here, in contrast, we demonstrate superresolving phase measurements based on two-photon N00N states generated by quantum dot single-photon sources making use of the Hong-Ou-Mandel effect on a beam splitter. By means of pulsed resonance fluorescence of a charged exciton state, we achieve, in postselection, a quantum enhanced improvement of the precision in phase uncertainty, higher than prescribed by the standard quantum limit. An analytical description of the measurement scheme is provided, reflecting requirements, capability, and restraints of single-photon emitters in optical quantum metrology. Our results point toward the realization of a real-world quantum sensor in the near future.

Fabrication and optical characterization of large scale membrane containing InP/AlGaInP quantum dots.

Single-photon sources with a high extraction efficiency are a prerequisite for applications in quantum communication and quantum computation schemes. One promising approach is the fabrication of a quantum dot containing membrane structure in combination with a solid immersion lens and a metal mirror. We have fabricated an 80 nm thin semiconductor membrane with incorporated InP quantum dots in an AlGaInP double hetero barrier via complete substrate removal. In addition, a gold layer was deposited on one side of the membrane acting as a mirror. The optical characterization shows in detail that the unique properties of the quantum dots are preserved in the membrane structure.

Enhanced efficiency of AlGaInP disk laser by in-well pumping.

The performance of a 665-nm GaInP disk laser operated continuous-wave at 15°C both in-well-pumped at 640 nm and barrier pumped at 532 nm is reported. The efficiency with respect to the absorbed power was enhanced by 3.5 times when using a 640-nm pump instead of a 532-nm pump. In-well pumping which is based on the absorption of the pump photons within the quantum-well heterostructures of the gain region instead of short-wavelength absorption in the barrier and spacer regions reduces the quantum defect between pump and laser photon and hence the heat generation. A slope efficiency of 60% with respect to the absorbed pump power was obtained by in-well pumping at 15°C. Continuous-wave laser operation was further demonstrated at heat sink temperatures of up to 55°C. Both the measurement of photoluminescence and COMSOL simulation show that the overall heat load in the in-well pumped laser is smaller than in the barrier-pumped laser. These results demonstrate the potential of optical in-well pumping for the operation of red AlGaInP disk lasers if combined with means for efficient pump-light absorption.

Mollow quintuplets from coherently excited quantum dots.

Charge-neutral excitons in semiconductor quantum dots (QDs) have a small finite energy separation caused by the anisotropic exchange splitting. Coherent excitation of neutral excitons will generally excite both exciton components, unless the excitation is parallel to one of the dipole axes. We present a polaron master equation model to describe two-exciton pumping using a coherent continuous wave pump field in the presence of a realistic anisotropic exchange splitting. We predict a five-peak incoherent spectrum, namely a Mollow quintuplet under general excitation conditions. We experimentally confirm such spectral quintuplets for In(Ga)As QDs and obtain very good agreement with theory.

Triggered indistinguishable single photons with narrow line widths from site-controlled quantum dots.

In this Letter, we present narrow line width (7 µeV), nearly background-free single-photon emission (g((2))(0) = 0.02) and highly indistinguishable photons (V = 0.73) from site-controlled In(Ga)As/GaAs quantum dots. These excellent properties have been achieved by combining overgrowth on ex situ pit-patterned substrates with vertical stacking of spectrally distinct quantum dot layers. Our study paves the way for large-scale integration of quantum dots into quantum photonic circuits as indistinguishable single-photon sources.

Single-photon emission from electrically driven InP quantum dots epitaxially grown on CMOS-compatible Si(001).

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform. Mismatches in material properties, however, present a major challenge, leading to high defect densities in the epitaxial layers and adversely affecting radiative recombination processes. However, nanostructures, such as quantum dots, have been found to grow defect-free even in a suboptimal environment. Here we present the first realization of indium phosphide quantum dots on exactly oriented Si(001), grown by metal-organic vapour-phase epitaxy. We report electrically driven single-photon emission in the red spectral region, meeting the wavelength range of silicon avalanche photodiodes' highest detection efficiency.

Dependence of the redshifted and blueshifted photoluminescence spectra of single In(x)Ga(1-x)As/GaAs quantum dots on the applied uniaxial stress.

We apply external uniaxial stress to tailor the optical properties of In(x)Ga(1-x)As/GaAs quantum dots. Unexpectedly, the emission energy of single quantum dots controllably shifts to both higher and lower energies under tensile strain. Theoretical calculations using a million atom empirical pseudopotential many-body method indicate that the shifting direction and magnitude depend on the lateral extension and more interestingly on the gallium content of the quantum dots. Our experimental results are in good agreement with the underlying theory.

Dephasing of triplet-sideband optical emission of a resonantly driven InAs/GaAs quantum dot inside a microcavity.

Detailed properties of resonance fluorescence from a single quantum dot in a micropillar cavity are investigated, with particular focus on emission coherence in the dependence on optical driving field power and detuning. A power-dependent series over a wide range reveals characteristic Mollow triplet spectra with large Rabi splittings of |Ω|≤15 GHz. In particular, the effect of dephasing in terms of systematic spectral broadening ∝Ω(2) of the Mollow sidebands is observed as a strong fingerprint of excitation-induced dephasing. Our results are in excellent agreement with predictions of a recently presented model on phonon-dressed quantum dot Mollow triplet emission in the cavity-QED regime.

Post-selected indistinguishable photons from the resonance fluorescence of a single quantum dot in a microcavity.

Applying continuous-wave pure resonant s-shell optical excitation of individual quantum dots in a high-quality micropillar cavity, we demonstrate the generation of post-selected indistinguishable photons in resonance fluorescence. Close to ideal visibility contrast of 90% is verified by polarization-dependent Hong-Ou-Mandel two-photon interference measurements. Furthermore, a strictly resonant continuous-wave excitation together with controlling the spontaneous emission lifetime of the single quantum dots via tunable emitter-mode coupling (Purcell) is proven as a versatile scheme to generate close to Fourier transform-limited (T2/(2T1)=0.91) single photons even at 80% of the emission saturation level.

Influence of the dark exciton state on the optical and quantum optical properties of single quantum dots.

The dark exciton state strongly affects the optical and quantum optical properties of flat InP/GaInP quantum dots. The exciton intensity drops sharply compared to the biexciton with rising pulsed laser excitation power while the opposite is true with temperature. Also, the decay rate is faster for the exciton than the biexciton and the dark-to-bright state spin flip is enhanced with temperature. Furthermore, long-lived dark state related memory effects are observed in second-order cross-correlation measurements between the exciton and biexciton and have been simulated using a rate-equation model.

Electrically pumped single-photon emission in the visible spectral range up to 80 K.

We present an electrically pumped single-photon emitter in the visible spectral range, working up to 80 K, realized using a self-assembled single InP quantum dot. We confirm that the electroluminescense is emitted from a single quantum dot by performing second-order autocorrelation measurements and show that the deviation from perfect single-photon emission is entirely related to detector limitations and background signal. Emission from both neutral and charged exciton complexes was observed with their relative intensites depending on the injection current and temperature.

Photon statistics of semiconductor microcavity lasers.

We present measurements of first- and second-order coherence of quantum-dot micropillar lasers together with a semiconductor laser theory. Our results show a broad threshold region for the observed high-beta microcavities. The intensity jump is accompanied by both pronounced photon intensity fluctuations and strong coherence length changes. The investigations clearly visualize a smooth transition from spontaneous to predominantly stimulated emission which becomes harder to determine for high beta. In our theory, a microscopic approach is used to incorporate the semiconductor nature of quantum dots. The results are in agreement with the experimental intensity traces and the photon statistics measurements.

Quantum light emission of two lateral tunnel-coupled (In,Ga)As/GaAs quantum dots controlled by a tunable static electric field.

Lateral quantum coupling between two self-assembled (In,Ga)As quantum dots has been observed. Photon statistics measurements between the various excitonic and biexcitonic transitions of these lateral quantum dot molecules display strong antibunching confirming the presence of coupling. Furthermore, we observe an anomalous exciton Stark shift with respect to static electric field. A simple model indicates that the lateral coupling is due to electron tunneling between the dots when the ground states are in resonance. The electron probability can then be shifted to either dot and the system can be used to create a wavelength-tunable single-photon emitter by simply applying a voltage.

Quantum optical studies on individual acceptor bound excitons in a semiconductor.

We demonstrate the generation of triggered single photons at a predetermined and well defined energy using the radiative recombination of single nitrogen-bound excitons in a semiconductor. The nitrogen atoms are embedded in a ZnSe quantum well structure and were excited by nonresonant optical pumping (82 MHz) at low temperature (4 K). We find resolution-limited photoluminescence lines (280 micro eV) which display photon antibunching under continuous optical pumping. Our results also suggest that single nitrogen-bound excitons are well suited for cavity quantum electrodynamics experiments.

Quantum correlation among photons from a single quantum dot at room temperature

Maxwell's equations successfully describe the statistical properties of fluorescence from an ensemble of atoms or semiconductors in one or more dimensions. But quantization of the radiation field is required to explain the correlations of light generated by a single two-level quantum emitter, such as an atom, ion or single molecule. The observation of photon antibunching in resonance fluorescence from a single atom unequivocally demonstrated the non-classical nature of radiation. Here we report the experimental observation of photon antibunching from an artificial system--a single cadmium selenide quantum dot at room temperature. Apart from providing direct evidence for a solid-state non-classical light source, this result proves that a single quantum dot acts like an artificial atom, with a discrete anharmonic spectrum. In contrast, we find the photon-emission events from a cluster of several dots to be uncorrelated.

A quantum dot single-photon turnstile device.

Quantum communication relies on the availability of light pulses with strong quantum correlations among photons. An example of such an optical source is a single-photon pulse with a vanishing probability for detecting two or more photons. Using pulsed laser excitation of a single quantum dot, a single-photon turnstile device that generates a train of single-photon pulses was demonstrated. For a spectrally isolated quantum dot, nearly 100% of the excitation pulses lead to emission of a single photon, yielding an ideal single-photon source.

Role of the beet western yellows virus readthrough protein in virus movement in Nicotiana clevelandii.

Luteoviruses such as beet western yellows polerovirus (BWYV) are confined to and multiply within the phloem compartment of their hosts. The readthrough domain (RTD) of the minor BWYV capsid protein P74 is required for efficient virus accumulation in Nicotiana clevelandii. Experiments were carried out to determine if the low virus titres observed following agro-inoculation of whole plants with certain RTD mutants are due to a defect in virus multiplication in the nucleate cells of the phloem compartment or to inefficient virus movement to new infection sites. Immuno-localization of wild-type and an RTD-null mutant virus in thin sections of petioles and in phloem cells of leaf lamina, as well as electron microscopy observations, were all consistent with the conclusion that the RTD is not essential for efficient virus multiplication in the nucleate phloem cells but intervenes in virus movement to increase the rate at which new infection foci are established and expand.

In situ localization of cacao swollen shoot virus in agroinfected Theobroma cacao.

Cacao swollen shoot virus (CSSV) is a small non-enveloped bacilliform virus with a double-stranded DNA genome. A very restricted host range and difficulties in transmitting the virus, either mechanically or via its natural vector, have hindered the study of cacao swollen shoot disease. As an alternative to the particle-bombardment method previously reported, we investigated another approach to infect Theobroma cacao. A greater-than-unit length copy (1.2) of the CSSV DNA genome was cloned into the Agrobacterium binary vector pBin 19 and was transferred into young plants via Agrobacterium tumefaciens. Typical leaf symptoms and stem swelling were observed seven and eleven weeks post inoculation, respectively. Viral DNA, CSSV coat protein and virions were detected in leaves with symptoms. Agroinfected plants were used to study the in situ localization of CSSV and its histopathologic effects in planta. In both leaves and petioles, virions were only seen in the cytoplasm of phloem companion cells and of a few xylem parenchyma cells. Light microscopy showed that stem swelling results from a proliferation of the xylem, phloem and cortex cells.