ABSTRACT
Ab initio techniques have been used to investigate structural changes in semiconducting Mg2Si and Ca2Si thin films (from 17 nm down to 0.2 nm corresponding to the 2D structure) along with band-gap variations due to quantum confinement. Cubic Mg2Si(111) thin films being dynamically stable at thicknesses (d) larger than 0.3 nm displayed an indirect band gap, the reduction of which with increasing d could be reasonably well described by the simple effective mass approximation. Only 2D Mg2Si has a unique structure because of the orthorhombic distortion and the direct band gap. Since the surface energy of cubic Ca2Si(111) films was lower with respect to any surface of the orthorhombic phase, which is the ground state for the Ca2Si bulk, the metastable in-bulk cubic phase in the form of thin films turned out to be preferable in total energy than any orthorhombic Ca2Si thin film for d < 3 nm. Sizable structural distortion and the appearance of surface states in the gap region of Ca2Si thin films with d < 3 nm could be the reason for an odd dependence of the band-gap variation on d.
ABSTRACT
W18O49 has been studied by means of ab initio techniques in the framework of the density functional theory using the onsite Hubbard-U correction applied to the W-d states as well as using the hybrid potential. The existence of bipolarons is found to be an intrinsic feature of this oxide resulting in the presence of different oxidation states of W atoms (W6+ and W5+) and in the co-existence of localized and delocalized electrons. We also discuss possible switching from the W6+ to W5+ and from the W5+ to W4+ oxidation states in the presence of an O vacancy. It appears that O vacancy formation does not cause any additional charge localization at W sites but solely contributes to delocalized electrons. The calculated absorption and reflection coefficients manifest a transparency window in the visible region. At the same time, sizable absorption, occurring due to the presence of free carriers, is detected in the far and mid infrared regions. Additionally, in the near infrared region we confirm and explain an experimentally observed shielding effect originating from transitions involving the localized bipolaronic states.
ABSTRACT
By high resolution scanning tunneling microscopy, we investigate the morphological transition from pyramid to dome islands during the growth of Ge on Si(001). We show that pyramids grow from top to bottom and that, from a critical size on, incomplete facets are formed. We demonstrate that the bunching of the steps delimiting these facets evolves into the steeper dome facets. Based on first principles and Tersoff-potential calculations, we develop a microscopic model for the onset of the morphological transition, able to reproduce closely the experimentally observed behavior.
ABSTRACT
By using scanning tunneling microscopy we found that the surface reconstruction of Ge/Si(001) epilayers evolves from (M x N) to (2 x N), and eventually to (2 x 1), during exposure to a Si flux. This sequence appears to be just the inverse of that observed during the growth of Ge or SiGe alloys on Si(001). However, molecular dynamics simulations supported by ab initio calculations allow us to interpret this morphological evolution in terms of Si migration through the epilayer and complex Si-Ge intermixing below the top Ge layer.
ABSTRACT
We show by molecular dynamics simulations on a scale comparable to experimental dimensions that a peculiar surface reconstruction of the (105) facets is responsible for the stability of Ge pyramids on Si(001). This finding is confirmed by ab initio total energy calculations for competing surface reconstructions and a very satisfactory comparison of the corresponding charge density maps to scanning tunneling microscopy measurements of the facets, both for filled and empty states.
ABSTRACT
In ballistic electron emission microscopy (BEEM) the propagation of hot carriers in thin metal films has long been treated using a free electron model. While the model explains many experimental findings, it cannot account for the lateral resolution observed for both electrons and holes on epitaxial CoSi(2)/Si(111), where interfacial point defects of atomic size appear as small as 1.3 nm, even below a 5.6 nm thick film. We present ab initio calculations explaining this high resolution in terms of conduction (valence) band structure focusing of electrons (holes), according to a recent Green's function approach to the BEEM process.
