Integrated Source of Path-Entangled Photon Pairs with Efficient Pump Self-Rejection.

We present a theoretical proposal for an integrated four-wave mixing source of narrow-band path-entangled photon pairs with efficient spatial pump self-rejection. The scheme is based on correlated loss in a system of waveguides in Kerr nonlinear media. We calculate that this setup gives the possibility for upwards of 100 dB pump rejection, without additional filtering. The effect is reached by driving the symmetric collective mode that is strongly attenuated by an engineered dissipation, while photon pairs are born in the antisymmetric mode. A similar set-up can additionally be realized for the generation of two-photon NOON states, also with pump self-rejection. We discuss the implementation of the scheme by means of the coherent diffusive photonics, and demostrate its feasibility in both glass (such as fused silica-glass and IG2) and planar semiconductor waveguide structures in indium phosphide (InP) and in silicon.

Crystallizing highly-likely subspaces that contain an unknown quantum state of light.

In continuous-variable tomography, with finite data and limited computation resources, reconstruction of a quantum state of light is performed on a finite-dimensional subspace. In principle, the data themselves encode all information about the relevant subspace that physically contains the state. We provide a straightforward and numerically feasible procedure to uniquely determine the appropriate reconstruction subspace by extracting this information directly from the data for any given unknown quantum state of light and measurement scheme. This procedure makes use of the celebrated statistical principle of maximum likelihood, along with other validation tools, to grow an appropriate seed subspace into the optimal reconstruction subspace, much like the nucleation of a seed into a crystal. Apart from using the available measurement data, no other assumptions about the source or preconceived parametric model subspaces are invoked. This ensures that no spurious reconstruction artifacts are present in state reconstruction as a result of inappropriate choices of the reconstruction subspace. The procedure can be understood as the maximum-likelihood reconstruction for quantum subspaces, which is an analog to, and fully compatible with that for quantum states.

Ab initio simulation of diffractometer instrumental function for high-resolution X-ray diffraction.

Modeling of the X-ray diffractometer instrumental function for a given optics configuration is important both for planning experiments and for the analysis of measured data. A fast and universal method for instrumental function simulation, suitable for fully automated computer realization and describing both coplanar and noncoplanar measurement geometries for any combination of X-ray optical elements, is proposed. The method can be identified as semi-analytical backward ray tracing and is based on the calculation of a detected signal as an integral of X-ray intensities for all the rays reaching the detector. The high speed of calculation is provided by the expressions for analytical integration over the spatial coordinates that describe the detection point. Consideration of the three-dimensional propagation of rays without restriction to the diffraction plane provides the applicability of the method for noncoplanar geometry and the accuracy for characterization of the signal from a two-dimensional detector. The correctness of the simulation algorithm is checked in the following two ways: by verifying the consistency of the calculated data with the patterns expected for certain simple limiting cases and by comparing measured reciprocal-space maps with the corresponding maps simulated by the proposed method for the same diffractometer configurations. Both kinds of tests demonstrate the agreement of the simulated instrumental function shape with the measured data.

Characterization of SiGe thin films using a laboratory X-ray instrument.

The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2-6 nm layers. For another set of partially relaxed layers, 50-200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.