ABSTRACT
We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 °C. A temperature dependent shift of the peak gain wavelength at a rate of 0.78 nm/K is observed. Consequently, two possible modes of operation are performed for a systematic device characterization over the entire temperature range. In the first mode, the signal wavelength is tuned to always match the peak gain wavelength while in the second mode, the signal wavelength is kept constant as the gain spectrum shifts with the temperature. Static characteristics, such as gain spectra and saturation levels, as well as dynamical properties, are presented. Distortion-less amplification of a single 28 Gbit/s signal and cross-talk free amplification of two channels, detuned by 2 nm, were demonstrated over the entire temperature range.
ABSTRACT
This paper describes a metal-insulator-semiconductor (MIS) capacitor with flat capacitance voltage characteristics and a small quadratic voltage capacitance coefficient. The device characteristics resemble a metal-insulator-metal diode except that here the capacitance depends on illumination and exhibits a strong frequency dispersion. The device incorporates Fe nanoparticles (NPs), mixed with SrF2, which are embedded in an insulator stack of SiO2 and HfO2. Positively charged Fe ions induce dipole type traps with an electronic polarization that is enhanced by photogenerated carriers injected from the substrate and/or by inter nanoparticle exchange of carriers. The obtained characteristics are compared with those of five other MIS structures: two based on Fe NPs, one with and the other without SrF2 sublayers. Additionally, devices contain Co NPs embedded in SrF2 sublayers, and finally, two structures have no NPs, with one based on a stack of SiO2 and HfO2 and the other which also includes SrF2. Only structures containing Fe NPs, which are incorporated into SrF2, yield a voltage independent capacitance, the level of which can be changed by illumination. These properties are essential in radio frequency/analog mixed signal applications.
ABSTRACT
We demonstrate a direct observation of the coherent noise spectral hole in a saturated quantum dash amplifier. Its width 500-600 GHz is determined by the response time and is responsible for high speed regeneration properties.
Subject(s)
Amplifiers, Electronic , Arsenicals/chemistry , Computer-Aided Design , Indium/chemistry , Optics and Photonics/instrumentation , Phosphines/chemistry , Equipment Design , Equipment Failure Analysis , Quantum TheoryABSTRACT
We demonstrate multi wavelength processing in a broad band 1550 nm quantum dash optical amplifier. Two 10 Gbit/s signals, spectrally separated by 30 nm are individually wavelength converted via four wave mixing (FWM) with no cross talk. High power signal levels cause depletion of high energy and wetting layer states resulting in some homogenizing of the gain medium and generation of cross FWM components near each channel due to FWM in the other channel. These do not affect the cross-talkless multichannel processing except when the two channels use equal detuning between signal and pump.
Subject(s)
Amplifiers, Electronic , Arsenicals/chemistry , Computer Communication Networks/instrumentation , Indium/chemistry , Optical Devices , Phosphines/chemistry , Signal Processing, Computer-Assisted/instrumentation , Computer-Aided Design , Equipment Design , Equipment Failure Analysis , Microwaves , SemiconductorsABSTRACT
We describe modulation responses and relative intensity noise (RIN) spectra of an InAs/GaAs quantum dot laser operating near 1300 nm. A very large nonlinear gain compression coefficient yields a highly damped modulation response with a maximum 3 dB bandwidth of ~6.5 GHz and flat RIN spectra which reach as low a level as -158/-160 dB/Hz at frequencies up to 10 GHz.
