Transparent Flexible Nanoline Field-Effect Transistor Array with High Integration in a Large Area.

Transparent flexible transistor array requests large-area fabrication, high integration, high manufacturing throughput, inexpensive process, uniformity in transistor performance, and reproducibility. This study suggests a facile and reliable approach to meet the requirements. We use the Al-coated polymer nanofiber patterns obtained by electrohydrodynamic (EHD) printing as a photomask. We use the lithography and deposition to produce highly aligned nanolines (NLs) of metals, insulators, and semiconductors on large substrates. With these NLs, we demonstrate a highly integrated NL field-effect transistor (NL-FET) array (105/(4 × 4 in2), 254 pixel-per-inch) made of pentacene and indium zinc oxide semiconductor NLs. In addition, we demonstrate a NL complementary inverter (NL-CI) circuit consisting of pentacene and fullerene NLs. The NL-FET array shows high transparency (∼90%), flexibility (stable at 2.5 mm bending radius), uniformity (∼90%), and high performances (mobility = 0.52 cm2/(V s), on-off ratio = 7.0 × 106). The NL-CI circuit also shows high transparency, flexibility, and typical switching characteristic with a gain of 21. The reliable large-scale fabrication of the various NLs proposed in this study is expected to be applied for manufacturing transparent flexible nanoelectronic devices.

Large-scale metal nanoelectrode arrays based on printed nanowire lithography for nanowire complementary inverters.

Nanowire (NW) complementary inverters based on NW channels and NW electrodes are a promising core logic unit of future subminiature, high density and textile-type configured electronic circuits. However, existing approaches based on short NWs (<150 µm) or non-woven nanofibers cannot provide precisely-coordinated NW inverters due to the difficulty in the position and alignment control of each NW. In particular, the large-scale fabrication of highly-aligned metal nanoelectrode (NE) arrays with low resistivity is a challenging issue. Here, we developed large-scale-aligned AgNE arrays with very low resistivity by using printed NW lithography, and then demonstrated NW complementary inverters by combining with direct-printed organic semiconducting NWs. The width of the AgNEs was controlled from 250 to 1000 nm; their resistivity was 2.6 µΩ cm which is quite comparable with that of Ag films (1.6 µΩ cm). We expect that this approach will facilitate advances in the large-scale fabrication of nanoelectronics which will be compatible with printed electronics.

Room-Temperature-Processable Wire-Templated Nanoelectrodes for Flexible and Transparent All-Wire Electronics.

Sophisticated preparation of arbitrarily long conducting nanowire electrodes on a large area is a significant requirement for development of transparent nanoelectronics. We report a position-customizable and room-temperature-processable metallic nanowire (NW) electrode array using aligned NW templates and a demonstration of transparent all-NW-based electronic applications by simple direct-printing. Well-controlled electroless-plating chemistry on a polymer NW template provided a highly conducting Au NW array with a very low resistivity of 7.5 µΩ cm (only 3.4 times higher than that of bulk Au), high optical transmittance (>90%), and mechanical bending stability. This method enables fabrication of all-NW-based electronic devices on various nonplanar surfaces and flexible plastic substrates. Our approach facilitates realization of advanced future electronics.

Versatile Metal Nanowiring Platform for Large-Scale Nano- and Opto-Electronic Devices.

A versatile metal nanowiring platform enables the fabrication of Ag nanowires (AgNW) at a desired position and orientation in an individually controlled manner. A printed, flexible AgNW has a diameter of 695 nm, a resistivity of 5.7 µΩ cm, and good thermal stability in air. Based on an Ag nanowiring platform, an all-NW transistors array, as well as various optoelectronic applications, are successfully demonstrated.

Organic core-sheath nanowire artificial synapses with femtojoule energy consumption.

Emulation of biological synapses is an important step toward construction of large-scale brain-inspired electronics. Despite remarkable progress in emulating synaptic functions, current synaptic devices still consume energy that is orders of magnitude greater than do biological synapses (~10 fJ per synaptic event). Reduction of energy consumption of artificial synapses remains a difficult challenge. We report organic nanowire (ONW) synaptic transistors (STs) that emulate the important working principles of a biological synapse. The ONWs emulate the morphology of nerve fibers. With a core-sheath-structured ONW active channel and a well-confined 300-nm channel length obtained using ONW lithography, ~1.23 fJ per synaptic event for individual ONW was attained, which rivals that of biological synapses. The ONW STs provide a significant step toward realizing low-energy-consuming artificial intelligent electronics and open new approaches to assembling soft neuromorphic systems with nanometer feature size.

Simple, Inexpensive, and Rapid Approach to Fabricate Cross-Shaped Memristors Using an Inorganic-Nanowire-Digital-Alignment Technique and a One-Step Reduction Process.

A rapid, scalable, and designable approach to produce a cross-shaped memristor array is demonstrated using an inorganic-nanowire digital-alignment technique and a one-step reduction process. Two-dimensional arrays of perpendicularly aligned, individually conductive Cu-nanowires with a nanometer-scale Cux O layer sandwiched at each cross point are produced.

Synergistic Effects of Doping and Thermal Treatment on Organic Semiconducting Nanowires.

Doping of small molecular donors or acceptors on conjugated organic materials can be used to improve the performance of organic electronics. Here we demonstrate highly aligned poly(3-hexylthiophene) (P3HT) nanowires (NWs) doped with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) using electrohydrodynamic organic NW printing. The transistor based on p-doped NWs had an order of magnitude higher mobility than did the undoped NW device. This significant improvement resulted from the synergistic effects of p-type doping and thermal annealing on F4-TCNQ-doped P3HT NWs, which induce microstructure changes in P3HT chains.

Organic nanowire fabrication and device applications.

Organic nanowires (ONWs) are flexible, stretchable, and have good electrical properties, and therefore have great potential for use in next-generation textile and wearable electronics. Analysis of trends in ONWs supports their great potential for various stretchable and flexible electronic applications such as flexible displays and flexible photovoltaics. Numerous methods can be used to prepare ONWs, but the practical industrial application of ONWs has not been achieved because of the lack of reliable techniques for controlling and patterning of individual nanowires. Therefore, an "individually controllable" technique to fabricate ONWs is essential for practical device applications. In this paper, three types of fabrication methods of ONWs are reviewed: non-alignment methods, massive-alignment methods, and individual-alignment methods. Recent research on electronic and photonic device applications of ONWs is then reviewed. Finally, suggestions for future research are put forward.

Individually position-addressable metal-nanofiber electrodes for large-area electronics.

A individually position-addressable large-scale-aligned Cu nanofiber (NF) array is fabricated using electro-hydrodynamic nanowire printing. The printed single-stranded Cu NF has a diameter of about 710 nm and resistivity of 14.1 µΩ cm and is effectively used as source/drain nanoelectrode in pentacene transistors, which show a 25-fold increased hole mobility than that of a device with Cu thin-film electrodes.

Rapid fabrication of designable large-scale aligned graphene nanoribbons by electro-hydrodynamic nanowire lithography.

A new technique, electro-hydrodynamic nanowire (e-NW) lithography , is demonstrated for the rapid, inexpensive, and efficient fabrication of graphene nanorib bons (GNRs) on a large scale while simultaneously controlling the location and alignment of the GNRs. A series of interesting GNR architectures, including parallel lines, grids, ladders, and stars are produced. A sub-10-nm-wide GNR is obtained to fabricate field-effect transistors that show a room-temperature on/off current ratio of ca. 70.

Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.

One-dimensional nanowires (NWs) have been extensively examined for numerous potential nano-electronic device applications such as transistors, sensors, memories, and photodetectors. The ferroelectric-gate field effect transistors (Fe-FETs) with semiconducting NWs in particular in combination with ferroelectric polymers as gate insulating layers have attracted great attention because of their potential in high density memory integration. However, most of the devices still suffer from low yield of devices mainly due to the ill-control of the location of NWs on a substrate. NWs randomly deposited on a substrate from solution-dispersed droplet made it extremely difficult to fabricate arrays of NW Fe-FETs. Moreover, rigid inorganic NWs were rarely applicable for flexible non-volatile memories. Here, we present the NW Fe-FETs with position-addressable polymer semiconducting NWs. Polymer NWs precisely controlled in both location and number between source and drain electrode were achieved by direct electrohydrodynamic NW printing. The polymer NW Fe-FETs with a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) exhibited non-volatile ON/OFF current margin at zero gate voltage of approximately 10(2) with time-dependent data retention and read/write endurance of more than 10(4) seconds and 10(2) cycles, respectively. Furthermore, our device showed characteristic bistable current hysteresis curves when being deformed with various bending radii and multiple bending cycles over 1000 times.

N-doped graphene field-effect transistors with enhanced electron mobility and air-stability.

Although graphene can be easily p-doped by various adsorbates, developing stable n-doped graphene that is very useful for practical device applications is a difficult challenge. We investigated the doping effect of solution-processed (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) on chemical-vapor-deposited (CVD) graphene. Strong n-type doping is confirmed by Raman spectroscopy and the electrical transport characteristics of graphene field-effect transistors. The strong n-type doping effect shifts the Dirac point to around -140 V. Appropriate annealing at a low temperature of 80 ºC enables an enhanced electron mobility of 1150 cm(2) V(-1) s(-1). The work function and its uniformity on a large scale (1.2 mm × 1.2 mm) of the doped surface are evaluated using ultraviolet photoelectron spectroscopy and Kelvin probe mapping. Stable electrical properties are observed in a device aged in air for more than one month.

Large-scale organic nanowire lithography and electronics.

Controlled alignment and patterning of individual semiconducting nanowires at a desired position in a large area is a key requirement for electronic device applications. High-speed, large-area printing of highly aligned individual nanowires that allows control of the exact numbers of wires, and their orientations and dimensions is a significant challenge for practical electronics applications. Here we use a high-speed electrohydrodynamic organic nanowire printer to print large-area organic semiconducting nanowire arrays directly on device substrates in a precisely, individually controlled manner; this method also enables sophisticated large-area nanowire lithography for nano-electronics. We achieve a maximum field-effect mobility up to 9.7 cm(2) V(-1) s(-1) with extremely low contact resistance (<5.53 Ω cm), even in nano-channel transistors based on single-stranded semiconducting nanowires. We also demonstrate complementary inverter circuit arrays comprising well-aligned p-type and n-type organic semiconducting nanowires. Extremely fast nanolithography using printed semiconducting nanowire arrays provide a simple, reliable method of fabricating large-area and flexible nano-electronics.

Molecularly controlled interfacial layer strategy toward highly efficient simple-structured organic light-emitting diodes.

A highly efficient simplified organic light-emitting diode (OLED) with a molecularly controlled strategy to form near-perfect interfacial layer on top of the anode is demonstrated. A self-organized polymeric hole injection layer (HIL) is exploited increasing hole injection, electron blocking, and reducing exciton quenching near the electrode or conducting polymers; this HIL allows simplified OLED comprised a single small-molecule fluorescent layer to exhibits a high current efficiency (∼20 cd/A).

Polyaniline-based conducting polymer compositions with a high work function for hole-injection layers in organic light-emitting diodes: formation of ohmic contacts.

It is a great challenge to develop solution-processed, polymeric hole-injection layers (HILs) that perform better than small molecular layers for realizing high-performance small-molecule organic light-emitting diodes (SM-OLEDs). We have greatly improved the injection efficiency and the current efficiency of SM-OLEDs by introducing conducting polymer compositions composed of polyaniline doped with polystyrene sulfonate and perfluorinated ionomer (PFI) as the HIL. During single spin-coating of conducting polymer compositions, the PFI layer was self-organized at the surface and greatly increased the film work function. It enhanced hole-injection efficiency and current efficiency by introducing a nearly ohmic contact and improving electron blocking. Our results demonstrate that solution-processed polyaniline HILs with tunable work functions are good candidates for reducing process costs and improving OLED performance.