State Readout of a Trapped Ion Qubit Using a Trap-Integrated Superconducting Photon Detector.

We report high-fidelity state readout of a trapped ion qubit using a trap-integrated photon detector. We determine the hyperfine qubit state of a single ^{9}Be^{+} ion held in a surface-electrode rf ion trap by counting state-dependent ion fluorescence photons with a superconducting nanowire single-photon detector fabricated into the trap structure. The average readout fidelity is 0.9991(1), with a mean readout duration of 46 µs, and is limited by the polarization impurity of the readout laser beam and by off-resonant optical pumping. Because there are no intervening optical elements between the ion and the detector, we can use the ion fluorescence as a self-calibrated photon source to determine the detector quantum efficiency and its dependence on photon incidence angle and polarization.

Single-photon detection in the mid-infrared up to 10 µm wavelength using tungsten silicide superconducting nanowire detectors.

We developed superconducting nanowire single-photon detectors based on tungsten silicide, which show saturated internal detection efficiency up to a wavelength of 10 µm. These detectors are promising for applications in the mid-infrared requiring sub-nanosecond timing, ultra-high gain stability, low dark counts, and high efficiency, such as chemical sensing, LIDAR, dark matter searches, and exoplanet spectroscopy.

High power generation of THz from 1550-nm photoconductive emitters.

Two photoconductive emitters - one with a self-complementary square spiral antenna, and the other with a resonant slot antenna - were fabricated on a GaAs epilayer embedded with ErAs quantum dots. Driven with 1550 nm mode-locked lasers, ~117 µW broadband THz power was generated from the device with the spiral antenna, and ~1.2 µW from the device with resonant slot antenna. The optical-to-THz conversion is through extrinsic photoconductivity.

UV superconducting nanowire single-photon detectors with high efficiency, low noise, and 4 K operating temperature.

For photon-counting applications at ultraviolet wavelengths, there are currently no detectors that combine high efficiency (> 50%), sub-nanosecond timing resolution, and sub-Hz dark count rates. Superconducting nanowire single-photon detectors (SNSPDs) have seen success over the past decade for photon-counting applications in the near-infrared, but little work has been done to optimize SNSPDs for wavelengths below 400 nm. Here, we describe the design, fabrication, and characterization of UV SNSPDs operating at wavelengths between 250 and 370 nm. The detectors have active areas up to 56 µm in diameter, 70 - 80% efficiency at temperatures up to 4.2 K, timing resolution down to 60 ps FWHM, blindness to visible and infrared photons, and dark count rates of ∼ 0.25 counts/hr for a 56 µm diameter pixel. These performance metrics make UV SNSPDs ideal for applications in trapped-ion quantum information processing, lidar studies of the upper atmosphere, UV fluorescent-lifetime imaging microscopy, and photon-starved UV astronomy.

UV-sensitive superconducting nanowire single photon detectors for integration in an ion trap.

We demonstrate superconducting nanowire single photon detectors with 76 ± 4% system detection efficiency at a wavelength of 315 nm and an operating temperature of 3.2 K, with a background count rate below 1 count per second at saturated detection efficiency. We propose integrating these detectors into planar surface electrode radio-frequency Paul traps for use in trapped ion quantum information processing. We operate detectors integrated into test ion trap structures at 3.8 K both with and without typical radio-frequency trapping electric fields. The trapping fields reduce system detection efficiency by 9%, but do not increase background count rates.

Demonstration of Einstein-Podolsky-Rosen Steering Using Single-Photon Path Entanglement and Displacement-Based Detection.

We demonstrate the violation of an Einstein-Podolsky-Rosen steering inequality developed for single-photon path entanglement with displacement-based detection. We use a high-rate source of heralded single-photon path-entangled states, combined with high-efficiency superconducting-based detectors, in a scheme that is free of any postselection and thus immune to the detection loophole. This result conclusively demonstrates single-photon entanglement in a one-sided device-independent scenario, and opens the way towards implementations of device-independent quantum technologies within the paradigm of path entanglement.

Electronic Enhancement of the Exciton Coherence Time in Charged Quantum Dots.

Minimizing decoherence due to coupling of a quantum system to its fluctuating environment is at the forefront of quantum information and photonics research. Nature sets the ultimate limit, however, given by the strength of the system's coupling to the electromagnetic field. Here, we establish the ability to electronically control this coupling and enhance the optical coherence time of the charged exciton transition in quantum dots embedded in a photonic waveguide. By manipulating the electronic wave functions through an applied lateral electric field, we increase the coherence time from ∼1.4 to ∼2.7 ns. Numerical calculations reveal that longer coherence arises from the separation of charge carriers by up to ∼6 nm, which leads to a 30% weaker transition dipole moment. The ability to electronically control the coherence time opens new avenues for quantum communication and novel coupling schemes between distant qubits.

Monolithic device for modelocking and stabilization of frequency combs.

We demonstrate a device that integrates a III-V semiconductor saturable absorber mirror with a graphene electro-optic modulator, which provides a monolithic solution to modelocking and noise suppression in a frequency comb. The device offers a pure loss modulation bandwidth exceeding 5 MHz and only requires a low voltage driver. This hybrid device provides not only compactness and simplicity in laser cavity design, but also small insertion loss, compared to the previous metallic-mirror-based modulators. We believe this work paves the way to portable and fieldable phase-coherent frequency combs.

High-efficiency superconducting nanowire single-photon detectors fabricated from MoSi thin-films.

We report on MoSi SNSPDs which achieved high system detection efficiency (87.1 ± 0.5% at 1542 nm) at 0.7 K and we demonstrate that these detectors can also be operated with saturated internal efficiency at a temperature of 2.3 K in a Gifford-McMahon cryocooler. We measured a minimum system jitter of 76 ps, maximum count rate approaching 10 MHz, and polarization dependence as low as 3.3 ± 0.1%. The performance of MoSi SNSPDs at 2.3 K is similar to the performance of WSi SNSPDs at < 1 K. The higher operating temperature of MoSi SNSPDs makes these devices promising for widespread use due to the simpler and less expensive cryogenics required for their operation.

Separating homogeneous and inhomogeneous line widths of heavy- and light-hole excitons in weakly disordered semiconductor quantum wells.

Optical two-dimensional Fourier-transform spectroscopy is used to study the heavy- and light-hole excitonic resonances in weakly disordered GaAs quantum wells. Homogeneous and inhomogeneous broadening contribute differently to the two-dimensional resonance line shapes, allowing separation of homogeneous and inhomogeneous line widths. The heavy-hole exciton exhibits more inhomogeneous than homogeneous broadening, whereas the light-hole exciton shows the reverse. This situation occurs because of the interplay between the length scale of the disorder and the exciton Bohr radius, which affects the exciton localization and scattering. Utilizing this separation of line widths, excitation-density-dependent measurements reveal that many-body interactions alter the homogeneous dephasing, while disorder-induced dephasing is unchanged.

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot.

We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g(2)(0)=0.395±0.030, below the 0.5 limit necessary for classification as a single photon source.

Extraction of many-body configurations from nonlinear absorption in semiconductor quantum wells.

Detailed electronic many-body configurations are extracted from quantitatively measured time-resolved nonlinear absorption spectra of resonantly excited GaAs quantum wells. The microscopic theory assigns the observed spectral changes to a unique mixture of electron-hole plasma, exciton, and polarization effects. Strong transient gain is observed only under cocircular pump-probe conditions and is attributed to the transfer of pump-induced coherences to the probe.

Electrically pumped mode-locked vertical-cavity semiconductor lasers.

We demonstrate what is to our knowledge the first electrically pumped mode-locked vertical-cavity surfaceemitting laser. The lasing threshold current is 15 mA with a 1% output coupler. The output pulse width is 80 ps at a repetition rate of 1 GHz.