Optical parameters of absorbing semiconductors from transmission and reflection.

A new method for obtaining the complex index of refraction from transmission and reflection data is proposed. The technique is similar to those of Manifacier and Swanepoel in that it uses interference extrema. We demonstrate that our method yields better results than the method of Swanepoel for index of refraction and comparable results for thickness and extinction coefficient. We also show a simple technique for correcting the data for finite bandwidth and surface roughness.