Vapor phase synthesis of ferroelectric microislands on PVDF thin films.

The interest in patterned polyvinylidene fluoride (PVDF) surfaces has grown significantly in the recent years due to ability to control the ferroelectric behavior through the size and shape of the surface structures. However, forming micron sized structures on the PVDF surface generally requires laborious lithography based methods or use of templates which complicates the process. In this study, we report spontaneous formation of microislands with ferroelectric response during PVDF growth via initiated chemical vapor deposition. Depositions performed under continuous and no flow conditions show that laminar precursor flow to the surface yield homogenous thin films, whereas no flow conditions of the batch mode result in the growth of surface protrusions (microislands) with higher polar phase content. Formation of these surface instabilities after an incubation time indicates the presence of local stress fields building with time, resulting in formation of the islands with higherßphase fraction to release the stress. Furthermore, the increased mobility of the polymer chains at high temperatures reduces the stress field, leading to lowerß/αphase ratios in smaller microislands.

Synthesis and Morphological Control of VO2 Nanostructures via a One-Step Hydrothermal Method.

The morphology of nanostructures is a vital parameter to consider in components comprised of materials exhibiting specific functionalities. The number of process steps and the need for high temperatures can often be a limiting factor when targeting a specific morphology. Here, we demonstrate a repeatable synthesis of different morphologies of a highly crystalline monoclinic phase of vanadium dioxide (VO2(M)) using a one-step hydrothermal method. By adjusting the synthesis parameters, such as pH, temperature, and reducing agent concentration in the precursor, VO2 nanostructures with high uniformity and crystallinity are achieved. Some of these morphologies were obtained via the choice of the reducing agent that allowed us to skip the annealing step. Our results indicate that the morphologies of the nanostructures are very sensitive to the hydrazine hydrate (N2H4.H2O) concentration. Another reducing agent, dodecylamine, was used to achieve well-organized and high-quality VO2(M) nanotubes. Differential scanning calorimetry (DSC) experiments revealed that all samples display the monoclinic-to-tetragonal structural transition (MTST) regardless of the morphology, albeit at different temperatures that can be interpreted as the variations in overheating and undercooling limits. VO2(M) structures with a higher surface to volume ratio exhibit a higher overheating limit than those with low ratios.

A Theoretical Treatment of THz Resonances in Semiconductor GaAs p-n Junctions.

Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homogeneous dielectric function is valid. Penetration of the electric fields into semiconductors induces locally varying charge densities and a spatially varying dielectric function is expected. While such an occurrence renders tunable THz plasmonics a possibility, it is crucial to understand the conditions under which propagating resonant conditions for the carriers occur, upon incidence of an electromagnetic radiation. In this manuscript, we derive a dispersion relation for a p-n heterojunction and apply the methodology to a GaAs p-n junction, a material of interest for optoelectronic devices. Considering symmetrically doped p- and n-type regions with equal width, the effect of certain parameters (such as doping and voltage bias) on the dispersion curve of the p-n heterojunction were investigated. Keeping in sight the different effective masses and mobilities of the carriers, we were able to obtain the conditions that yield identical dielectric functions for the p- and n-regions. Our results indicated that the p-n GaAs system can sustain propagating resonances and can be used as a layered plasmonic waveguide. The conditions under which this is feasible fall in the frequency region between the transverse optical phonon resonance of GaAs and the traditional cut-off frequency of the diode waveguide. In addition, our results indicated when the excitation was slightly above the phonon resonance frequency, the plasmon propagation attained low-loss characteristics. We also showed that the existence or nonexistence of the depletion zone between the p- and n- interfaces allowed certain plasmon modes to propagate, while others decayed rapidly, pointing out the possibility for a design of selective filters.