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1.
Electrical properties of undoped GaxIn1-xP/GaAs quantum wells.
Elhamri S; Ahoujja M; Newrock RS; Mast DB; Herbert ST; Mitchel WC; Razeghi M.
Phys Rev B Condens Matter ; 54(15): 10688-10695, 1996 Oct 15.
Article in English | MEDLINE | ID: mdl-9984865
2.
Persistent-photoconductivity effect in delta -doped Al0.48In0.52As/Ga0.47In0.53As heterostructures.
Lo I; Wang DP; Hsieh KY; Wang TF; Mitchel WC; Ahoujja M; Cheng J; Fathimulla A; Hier H.
Phys Rev B Condens Matter ; 52(20): 14671-14676, 1995 Nov 15.
Article in English | MEDLINE | ID: mdl-9980801
3.
Evidence for a stable excitonic ground state in a spatially separated electron-hole system.
Cheng J; Kono J; McCombe BD; Lo I; Mitchel WC; Stutz CE.
Phys Rev Lett ; 74(3): 450-453, 1995 Jan 16.
Article in English | MEDLINE | ID: mdl-10058761
4.
Cyclotron-resonance oscillations in a two-dimensional electron-hole system.
Kono J; McCombe BD; Cheng J; Lo I; Mitchel WC; Stutz CE.
Phys Rev B Condens Matter ; 50(16): 12242-12245, 1994 Oct 15.
Article in English | MEDLINE | ID: mdl-9975380
5.
Electronic properties of AlxGa1-xSb/InAs quantum wells.
Lo I; Mitchel WC; Cheng J.
Phys Rev B Condens Matter ; 50(8): 5316-5322, 1994 Aug 15.
Article in English | MEDLINE | ID: mdl-9976872
6.
Erratum: Magnetic-field-induced free electron and hole recombination in semimetallic AlxGa1-xSb/InAs quantum wells
Lo I; Mitchel WC; Cheng J.
Phys Rev B Condens Matter ; 49(11): 7833, 1994 Mar 15.
Article in English | MEDLINE | ID: mdl-10021606
7.
Magnetic-field-induced free electron and hole recombination in semimetallic AlxGa1-xSb/InAs quantum wells.
Lo I; Mitchel WC; Cheng J.
Phys Rev B Condens Matter ; 48(12): 9118-9121, 1993 Sep 15.
Article in English | MEDLINE | ID: mdl-10007135
8.
Indirect photoreflectance from high-electron-mobility transistor structures.
Sydor M; Engholm JR; Manasreh MO; Evans KR; Stutz CE; Mitchel WC.
Phys Rev B Condens Matter ; 45(23): 13796-13798, 1992 Jun 15.
Article in English | MEDLINE | ID: mdl-10001488
9.
Two-dimensional electron gas in GaAs/Al1-xGaxAs heterostructures: Effective mass.
Lo I; Mitchel WC; Perrin RE; Messham RL; Yen MY.
Phys Rev B Condens Matter ; 43(14): 11787-11790, 1991 May 15.
Article in English | MEDLINE | ID: mdl-9996950
10.
Temperature dependence of the persistent photocurrent in Czochralski gallium arsenide.
Mitchel WC; Perrin RE.
Phys Rev B Condens Matter ; 41(17): 12086-12091, 1990 Jun 15.
Article in English | MEDLINE | ID: mdl-9993661
11.
Anomalous photoquenching in semi-insulating GaAs attributed to the presence of the deep donor ELO.
Mitchel WC; Fischer DW; Rea LS; Yu PW.
Phys Rev B Condens Matter ; 40(12): 8431-8436, 1989 Oct 15.
Article in English | MEDLINE | ID: mdl-9991306
12.
Photoreflectance from GaAs and GaAs/GaAs interfaces.
Sydor M; Angelo J; Wilson JJ; Mitchel WC; Yen MY.
Phys Rev B Condens Matter ; 40(12): 8473-8484, 1989 Oct 15.
Article in English | MEDLINE | ID: mdl-9991313
13.
Absence of a persistent photocurrent in undoped semi-insulating Bridgman GaAs containing EL2 and carbon.
Mitchel WC.
Phys Rev B Condens Matter ; 39(14): 10390-10393, 1989 May 15.
Article in English | MEDLINE | ID: mdl-9947831
14.
Electron paramagnetic resonance identification of the SbGa heteroantisite defect in GaAs:Sb.
Baeumler M; Schneider J; Kaufmann U; Mitchel WC; Yu PW.
Phys Rev B Condens Matter ; 39(9): 6253-6256, 1989 Mar 15.
Article in English | MEDLINE | ID: mdl-9949061
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