MEMS-Based Wavelength-Selective Bolometers.

We propose and experimentally demonstrate a compact design for membrane-supported wavelength-selective infrared (IR) bolometers. The proposed bolometer device is composed of wavelength-selective absorbers functioning as the efficient spectroscopic IR light-to-heat transducers that make the amorphous silicon (a-Si) bolometers respond at the desired resonance wavelengths. The proposed devices with specific resonances are first numerically simulated to obtain the optimal geometrical parameters and then experimentally realized. The fabricated devices exhibit a wide resonance tunability in the mid-wavelength IR atmospheric window by changing the size of the resonator of the devices. The measured spectral response of the fabricated device wholly follows the pre-designed resonance, which obviously evidences that the concept of the proposed wavelength-selective IR bolometers is realizable. The results obtained in this work provide a new solution for on-chip MEMS-based wavelength-selective a-Si bolometers for practical applications in IR spectroscopic devices.

HMGA1a Induces Alternative Splicing of the Estrogen Receptor-αlpha Gene by Trapping U1 snRNP to an Upstream Pseudo-5' Splice Site.

Objectives: The high-mobility group A protein 1a (HMGA1a) protein is known as a transcription factor that binds to DNA, but recent studies have shown it exerts novel functions through RNA-binding. We were prompted to decipher the mechanism of HMGA1a-induced alternative splicing of the estrogen receptor alpha (ERα) that we recently reported would alter tamoxifen sensitivity in MCF-7 TAMR1 cells. Methods: Endogenous expression of full length ERα66 and its isoform ERα46 were evaluated in MCF-7 breast cancer cells by transient expression of HMGA1a and an RNA decoy (2'-O-methylated RNA of the HMGA1a RNA-binding site) that binds to HMGA1a. RNA-binding of HMGA1a was checked by RNA-EMSA. In vitro splicing assay was performed to check the direct involvement of HMGA1a in splicing regulation. RNA-EMSA assay in the presence of purified U1 snRNP was performed with psoralen UV crosslinking to check complex formation of HMGA1a-U1 snRNP at the upstream pseudo-5' splice site of exon 1. Results: HMGA1a induced exon skipping of a shortened exon 1 of ERα in in vitro splicing assays that was blocked by the HMGA1a RNA decoy and sequence-specific RNA-binding was confirmed by RNA-EMSA. RNA-EMSA combined with psoralen UV crosslinking showed that HMGA1a trapped purified U1 snRNP at the upstream pseudo-5' splice site. Conclusions: Regulation of ERα alternative splicing by an HMGA1a-trapped U1 snRNP complex at the upstream 5' splice site of exon 1 offers novel insight on 5' splice site regulation by U1 snRNP as well as a promising target in breast cancer therapy where alternative splicing of ERα is involved.

HMGA1a induces alternative splicing of estrogen receptor alpha in MCF-7 human breast cancer cells.

The high-mobility group A protein 1a (HMGA1a) protein is known as an oncogene whose expression level in cancer tissue correlates with the malignant potential, and known as a component of senescence-related structures connecting it to tumor suppressor networks in fibroblasts. HMGA1 protein binds to DNA, but recent studies have shown it exerts novel functions through RNA-binding. Our previous studies have shown that sequence-specific RNA-binding of HMGA1a induces exon-skipping of Presenilin-2 exon 5 in sporadic Alzheimer disease. Here we show that HMGA1a induced exon-skipping of the estrogen receptor alpha (ERα) gene and increased ERα46 mRNA expression in MCF-7 breast cancer cells. An RNA-decoy of HMGA1a efficiently blocked this event and reduced ERα46 protein expression. Blockage of HMGA1a RNA-binding property consequently induced cell growth through reduced ERα46 expression in MCF-7 cells and increased sensitivity to tamoxifen in the tamoxifen-resistant cell line, MCF-7/TAMR1. Stable expression of an HMGA1a RNA-decoy in MCF-7 cells exhibited decreased ERα46 protein expression and increased estrogen-dependent tumor growth when these cells were implanted in nude mice. These results show HMGA1a is involved in alternative splicing of the ERα gene and related to estrogen-related growth as well as tamoxifen sensitivity in MCF-7 breast cancer cells.

Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films.

Surface passivation and bulk carrier lifetime of silicon nanowires (SiNWs) are essential for their application in solar cell devices. The effective minority carrier lifetime of a semiconductor material is influenced by both its surface passivation and bulk carrier lifetime. We found that the effective carrier lifetime of SiNWs passivated with aluminum oxide (Al2O3) was significantly influenced by the fabrication process of SiNWs. We could not measure the effective lifetime of SiNWs fabricated by thermal annealing of amorphous silicon nanowires. Nevertheless, the SiNWs fabricated by metal-assisted chemical etching of polycrystalline silicon displayed an effective lifetime of 2.86 µs. Thermal annealing of SiNWs at 400 °C in a forming gas improved the effective carrier lifetime from 2.86 to 15.9 µs because of the improvement in surface passivation at the interface between the SiNWs and Al2O3 layers.

Observation of Quantum Size Effect from Silicon Nanowall.

We developed a fabrication technique of very thin silicon nanowall structures. The minimum width of the fabricated silicon nanowall structures was about 3 nm. This thinnest region of the silicon nanowall structures was investigated by using cathode luminescence and ultraviolet photoelectron spectroscopy (UPS). The UPS measurements revealed that the density of states (DOS) of the thinnest region showed a stepwise shape which is completely different from that of the bulk Si. Theoretical analysis clearly demonstrated that this change of the DOS shape was due to the quantum size effect.

Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer.

The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of crystalline silicon. PACS: 85.35.Be; 84.60.Jt; 78.67.Bf.

Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition.

To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 µs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 µm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.