Photocatalytic activity enhancement of nanostructured metal-oxides photocatalyst: a review.

Nanostructured metal oxide semiconductors have emerged as promising nanoscale photocatalysts due to their excellent photosensitivity, chemical stability, non-toxicity, and biocompatibility. Enhancing the photocatalytic activity of metal oxide is critical in improving their efficiency in radical ion production upon optical exposure for various applications. Therefore, this review paper provides an in-depth analysis of the photocatalytic activity of nanostructured metal oxides, including the photocatalytic mechanism, factors affecting the photocatalytic efficiency, and approaches taken to boost the photocatalytic performance through structure or material modifications. This paper also highlights an overview of the recent applications and discusses the recent advancement of ZnO-based nanocomposite as a promising photocatalytic material for environmental remediation, energy conversion, and biomedical applications.

Free carrier-mediated ferromagnetism in nonmagnetic ion (Bi-Li) codoped ZnO nanowires.

Non-magnetic dopants and p-type materials are attractive choices to explore the mechanism and origin of room-temperature defect-based ferromagnetism in metal oxide-based DMSs. In this study, we performed comprehensive transport, magnetic, structural, optical, and compositional as well as DFT studies of pristine, Li-doped, and Bi-Li codoped vertically aligned ZnO NW films to explore the mechanism and origin of ferromagnetism. We used a simple solution process to synthesize a wurtzite structure and vertically aligned ZnO NWs on a Si substrate. The doping, high crystallinity, and vertical alignment along the 002 planes were evidenced through HRTEM, FESEM, and XRD measurements. The XPS analysis confirmed the +1 and +3 states of Li and Bi, respectively. Moreover, Raman analysis also depicted the characteristic peaks of ZnO NWs at 98.31 cm-1 and 437.71 cm-1. The PL studies of doped NWs showed a typical NBE peak of ZnO at ∼395 nm along with a sub-gap defect-related broad peak at ∼504 nm indicating the presence of defects due to doping. The pure ZnO NW samples showed negligible saturation magnetization (Ms) at room temperature while the saturation magnetization was observed to increase with Li-doping and reduced with Bi-Li codoping. According to the Hall studies the pure ZnO NW film showed n-type conductivity, while all doped and codoped samples showed p-type conductivity. The hole concentration was observed to increase with Li-doping and decrease with Bi-Li codoping showing similar behavior to that of the Ms value, thereby suggesting a direct correlation between Ms and carrier concentration. The I-V properties showed a similar trend to that of carrier concentration and Ms. Our DFT studies showed that magnetization increased by Li doping and reduced by Li-Bi codoping in defective ZnO crystals by replacing Zn with Li and Bi atoms at the Zn site. Overall, our studies highlight the immense potential of hole-mediated Bi-Li codoped ZnO NW devices which are expected to play a pivotal role in developing spintronic devices.

ZnO NRs/rGO Photocatalyst in a Polymer-Based Microfluidic Platform.

This paper reports the development of ZnO NRs/rGO-based photocatalysts integrated into a tree-branched polymer-based microfluidic reactor for efficient photodegradation of water contaminants. The reactor system includes a photocatalytic reactor, tree-branched microfluidic channels, and ZnO nanorods (NRs) coated with reduced graphene oxide (rGO) on a glass substrate within an area of 0.6 × 0.6 cm2. The ZnO NRs/rGO acts as a photocatalyst layer grown hydrothermally and then spray-coated with rGO. The microfluidic system is made of PDMS and fabricated using soft lithography (micro molding using SU-8 master mold patterned on a silicon wafer). The device geometry is designed using AutoCAD software and the flow properties of the microfluidics are simulated using COMSOL Multiphysics. The microfluidic platform's photocatalytic process aims to bring the nanostructured photocatalyst into very close proximity to the water flow channel, reducing the interaction time and providing effective purification performance. Our functionality test showed that a degradation efficiency of 23.12 %, within the effective residence time of less than 3 s was obtained.

A correlation of conductivity medium and bioparticle viability on dielectrophoresis-based biomedical applications.

Dielectrophoresis (DEP) bioparticle research has progressed from micro to nano levels. It has proven to be a promising and powerful cell manipulation method with an accurate, quick, inexpensive, and label-free technique for therapeutic purposes. DEP, an electrokinetic phenomenon, induces particle movement as a result of polarization effects in a nonuniform electrical field. This review focuses on current research in the biomedical field that demonstrates a practical approach to DEP in terms of cell separation, trapping, discrimination, and enrichment under the influence of the conductive medium in correlation with bioparticle viability. The current review aims to provide readers with an in-depth knowledge of the fundamental theory and principles of the DEP technique, which is influenced by conductive medium and to identify and demonstrate the biomedical application areas. The high conductivity of physiological fluids presents obstacles and opportunities, followed by bioparticle viability in an electric field elaborated in detail. Finally, the drawbacks of DEP-based systems and the outlook for the future are addressed. This article will aid in advancing technology by bridging the gap between bioscience and engineering. We hope the insights presented in this review will improve cell suspension medium and promote DEP-viable bioparticle manipulation for health-care diagnostics and therapeutics.

Heteroepitaxial Growth of an Ultrathin ß-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling.

ß-Gallium oxide (Ga2O3) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of the ß-Ga2O3 ultrathin film on a sapphire substrate via mist chemical vapor deposition (CVD). This study used a simple solution-processed and nonvacuum mist CVD method to grow a heteroepitaxial ß-Ga2O3 thin film at 700 °C using a Ga precursor and carrier gases such as argon and oxygen. Various characterization techniques were used to determine the properties of the thin film. Additionally, a computational study was performed to study the temperature distribution and different mist velocity profiles of the finite element mist CVD model. This simulation study is essential for investigating low to high mist velocities over the substrate and applying low velocity to carry out experimental work. XRD and AFM results show that the ß-Ga2O3 thin film is grown on a sapphire substrate of polycrystalline nature with a smooth surface. HR-TEM measurement and UV-visible transmission spectrometry demonstrated heteroepitaxial ß-Ga2O3 in an ultrathin film with a band gap of 4.8 eV.

SWCNT Network-FET Device for Human Serum Albumin Detection.

A thin film of single-walled carbon nanotube (SWCNT) network field-effect transistor (FET) was fabricated by a simple, fast, and reliable deposition method for electronic applications. This study aims to develop a method for fabricating a thin film of random SWCNTs to be used as a transducer to detect human serum albumin (HSA) in biosensor applications. The random SWCNT network was deposited using the airbrush technique. The morphology of the CNT network was examined by utilising atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM), while electrical characteristics were analysed using three-terminal IV measurements. The thin film (SWCNT network) was applied as a transducer to detect human serum albumin (HSA) based on its covalent interaction with antibodies. HSA plays a significant part in the physiological functions of the human body. The surface alteration of the SWCNTs was verified using Fourier transform infrared (FTIR) spectroscopy. Electrical current-voltage measurements validated the surface binding and HSA detection. The biosensor linearly recorded a 0.47 fg/mL limit of detection (LOD) and a high sensitivity of 3.44 µA (g/mL)-1 between 1 fg/mL and 10 pg/mL. This device can also be used to identify a genuine HSA despite interference from other biomolecules (i.e., bovine serum albumin (BSA)), thus demonstrating the random SWCNT-FET immunosensor ability to quantify HSA in a complex biological environment.

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD.

Alpha (α)- and beta (ß)-phase gallium oxide (Ga2O3), emerging as ultrawide-band gap semiconductors, have been paid a great deal of attention in optoelectronics and high-performance power semiconductor devices owing to their ultrawide band gap ranging from 4.4 to 5.3 eV. The hot-wall mist chemical vapor deposition (mist-CVD) method has been shown to be effective for the growth of pure α- and ß-phase Ga2O3 thin films on the α-Al2O3 substrate. However, challenges to preserve their intrinsic properties at a critical growth temperature for robust applications still remain a concern. Here, we report a convenient route to grow a mixed α- and ß-phase Ga2O3 ultrathin film on the α-Al2O3 substrate via mist-CVD using a mixture of the gallium precursor and oxygen gas at growth temperatures, ranging from 470 to 700 °C. The influence of growth temperature on the film characteristics was systematically investigated. The results revealed that the as-grown Ga2O3 film possesses a mixed α- and ß-phase with an average value of dislocation density of 1010 cm-2 for all growth temperatures, indicating a high lattice mismatch between the film and the substrate. At 600 °C, the ultrathin and smooth Ga2O3 film exhibited a good surface roughness of 1.84 nm and an excellent optical band gap of 5.2 eV. The results here suggest that the mixed α- and ß-phase Ga2O3 ultrathin film can have great potential in developing future high-power electronic devices.

In vitro dielectrophoresis of HEK cell migration for stimulating chronic wound epithelialization.

This article describes a dielectrophoresis (DEP)-based simulation and experimental study of human epidermal keratinocyte (HEK) cells for wounded skin cell migration toward rapid epithelialization. MyDEP is a standalone software designed specifically to study dielectric particles and cell response to an alternating current (AC) electric field. This method demonstrated that negative dielectrophoresis (NDEP ) occurs in HEK cells at a wide frequency range in highly conductive medium. The finite element method was used to characterize particle trajectory based on DEP and drag force. The performance of the system was assessed using HEK cells in a highly conductive EpiLife suspending medium. The DEP experiment was performed by applying sinusoidal wave AC potential at the peak-to-peak voltage of 10 V in a tapered aluminum microelectrode array from 100 kHz to 1 MHz. We experimentally observed the occurrence of NDEP, which attracted HEK cells toward the local electric field minima in the region of interest. The DIPP-MotionV software was used to track cell migration in the prerecorded video via an automatic marker and estimate the average speed and acceleration of the cells. The results showed that HEK cell migration was accomplished approximately at 6.43 µm/s at 100 kHz with 10 V, and FDEP caused the cells to migrate and align at the target position, which resulted in faster wound closures because of the application of an electric field frequency to HEK cells in random locations.

State-of-the-Art on Functional Titanium Dioxide-Integrated Nano-Hybrids in Electrical Biosensors.

Biosensors operating based on electrical methods are being accelerated toward rapid and efficient detection that improve the performance of the device. Continuous study in nano- and material-sciences has led to the inflection with properties of nanomaterials that fit the trend parallel to the biosensor evolution. Advancements in technology that focuses on nano-hybrid are being used to develop biosensors with better detection strategies. In this sense, titanium dioxide (TiO2) nanomaterials have attracted extensive interest in the construction of electrical biosensors. The formation of TiO2 nano-hybrid as an electrical transducing material has revealed good results with high performance. The modification of the sensing portion with a combination (nano-hybrid form) of nanomaterials has produced excellent sensors in terms of stability, reproducibility, and enhanced sensitivity. This review highlights recent research advancements with functional TiO2 nano-hybrid materials, and their victorious story in the construction of electrical biosensors are discussed. Future research directions with commercialization of these devices and their extensive utilizations are also discussed.

Exploration of 2D Ti3C2 MXene for all solution processed piezoelectric nanogenerator applications.

A new 2D titanium carbide (Ti3C2), a low dimensional material of the MXene family has attracted remarkable interest in several electronic applications, but its unique structure and novel properties are still less explored in piezoelectric energy harvesters. Herein, a systematic study has been conducted to examine the role of Ti3C2 multilayers when it is incorporated in the piezoelectric polymer host. The 0.03 g/L of Ti3C2 has been identified as the most appropriate concentration to ensure the optimum performance of the fabricated device with a generated output voltage of about 6.0 V. The probable reasons might be due to the uniformity of nanofiller distribution in the polyvinylidene difluoride (PVDF) and the incorporation of Ti3C2 in a polymer matrix is found to enhance the ß-phase of PVDF and diminish the undesired α-phase configuration. Low tapping frequency and force were demonstrated to scavenge electrical energy from abundant mechanical energy resources particularly human motion and environmental stimuli. The fabricated device attained a power density of 14 µW.cm-2 at 10.8 MΩ of load resistor which is considerably high among 2D material-based piezoelectric nanogenerators. The device has also shown stable electrical performance for up to 4 weeks and is practically able to store energy in a capacitor and light up a LED. Hence, the Ti3C2-based piezoelectric nanogenerator suggests the potential to realize the energy harvesting application for low-power electronic devices.

Dielectrophoresis applications in biomedical field and future perspectives in biomedical technology.

Dielectrophoresis (DEP) is a technique to manipulate trajectories of polarisable particles in nonuniform electric fields by utilizing unique dielectric properties. The manipulation of a cell using DEP has been demonstrated in various modes, thereby indicating potential applications in the biomedical field. In this review, recent DEP applications in the biomedical field are discussed. This review is intended to highlight research work that shows significant approach related to DEP application in biomedical field reported between 2016 and 2020. First, single-shell model and multiple-shell model of cells are introduced. Current device structures and recently introduced electrode patterns for DEP applications are discussed. Second, the biomedical uses of DEP in liquid biopsies, stem cell-based therapies, and diagnosis of infectious diseases due to bacteria and viruses are presented. Finally, the challenges in DEP research are discussed, and the reported solutions are explained. DEP's potential research directions are mentioned.

Review of Thermoelectric Generators at Low Operating Temperatures: Working Principles and Materials.

Thermoelectric generators (TEGs) are a form of energy harvester and eco-friendly power generation system that directly transform thermal energy into electrical energy. The thermoelectric (TE) method of energy harvesting takes advantage of the Seebeck effect, which offers a simple solution for fulfilling the power-supply demand in almost every electronics system. A high-temperature condition is commonly essential in the working mechanism of the TE device, which unfortunately limits the potential implementation of the device. This paper presents an in-depth analysis of TEGs at low operating temperature. The review starts with an extensive description of their fundamental working principles, structure, physical properties, and the figure of merit (ZT). An overview of the associated key challenges in optimising ZT value according to the physical properties is discussed, including the state of the art of the advanced approaches in ZT optimisation. Finally, this manuscript summarises the research status of Bi2Te3-based semiconductors and other compound materials as potential materials for TE generators working at low operating temperatures. The improved TE materials suggest that TE power-generation technology is essential for sustainable power generation at near-room temperature to satisfy the requirement for reliable energy supplies in low-power electrical/electronics systems.

Carbon nanotubes from waste cooking palm oil as adsorbent materials for the adsorption of heavy metal ions.

In this work, waste cooking palm oil (WCPO)-based carbon nanotubes (CNTs) with encapsulated iron (Fe) nanoparticles have been successfully produced via modified thermal chemical vapor deposition method. Based on several characterizations, the dense WCPO-based CNT was produced with high purity of 89% and high crystallinity proven by low ID/IG ratio (0.43). Moreover, the ferromagnetic response of CNTs showed that the average coercivity and magnetization saturation were found to be 551.5 Oe and 13.4 emu/g, respectively. These produced WCPO-based CNTs were further used as heavy metal ions adsorbent for wastewater treatment application. Some optimizations, such as the effect of different adsorbent dosage, varied initial pH solution, and various heavy metal ions, were investigated. The adsorption studies showed that the optimum adsorbent dosage was 1.8 g/L when it was applied to 100 mg/L Cu (II) solution at neutral pH (pH 7). Further measurement then showed that high Cu (II) ion removal percentage (~80%) was achieved when it was applied at very acidic solution (pH 2). Last measurement confirmed that the produced WCPO-based CNTs successfully removed different heavy metal ions in the following order: Fe (II) > Zn (II) ≈ Cu (II) with the removal percentage in the range of 99.2 to 99.9%. The adsorption isotherm for Cu (II) was better fitted by Langmuir model with a correlation coefficient of 0.82751. WCPO-based CNTs can be a potential material to be applied as adsorbent in heavy metal ion removal.

Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition.

We report a practical chemical vapor deposition (CVD) route to produce bilayer graphene on a polycrystalline Ni film from liquid benzene (C6H6) source at a temperature as low as 400 °C in a vertical cold-wall reaction chamber. The low activation energy of C6H6 and the low solubility of carbon in Ni at such a low temperature play a key role in enabling the growth of large-area bilayer graphene in a controlled manner by a Ni surface-mediated reaction. All experiments performed using this method are reproducible with growth capabilities up to an 8 in. wafer-scale substrate. Raman spectra analysis, high-resolution transmission electron microscopy, and selective area electron diffraction studies confirm the growth of Bernal-stacked bilayer graphene with good uniformity over large areas. Electrical characterization studies indicate that the bilayer graphene behaves much like a semiconductor with predominant p-type doping. These findings provide important insights into the wafer-scale fabrication of low-temperature CVD bilayer graphene for next-generation nanoelectronics.

First-Principles Studies for Electronic Structure and Optical Properties of Strontium Doped ß-Ga2O3.

The crystal structure, electron charge density, band structure, density of states, and optical properties of pure and strontium (Sr)-doped ß-Ga2O3 were studied using the first-principles calculation based on the density functional theory (DFT) within the generalized-gradient approximation (GGA) with the Perdew-Burke-Ernzerhof (PBE). The reason for choosing strontium as a dopant is due to its p-type doping behavior, which is expected to boost the material's electrical and optical properties and maximize the devices' efficiency. The structural parameter for pure ß-Ga2O3 crystal structure is in the monoclinic space group (C2/m), which shows good agreement with the previous studies from experimental work. Bandgap energy from both pure and Sr-doped ß-Ga2O3 is lower than the experimental bandgap value due to the limitation of DFT, which will ignore the calculation of exchange-correlation potential. To counterbalance the current incompatibilities, the better way to complete the theoretical calculations is to refine the theoretical predictions using the scissor operator's working principle, according to literature published in the past and present. Therefore, the scissor operator was used to overcome the limitation of DFT. The density of states (DOS) shows the hybridization state of Ga 3d, O 2p, and Sr 5s orbital. The bonding population analysis exhibits the bonding characteristics for both pure and Sr-doped ß-Ga2O3. The calculated optical properties for the absorption coefficient in Sr doping causes red-shift of the absorption spectrum, thus, strengthening visible light absorption. The reflectivity, refractive index, dielectric function, and loss function were obtained to understand further this novel work on Sr-doped ß-Ga2O3 from the first-principles calculation.

Dielectrophoresis Prototypic Polystyrene Particle Synchronization toward Alive Keratinocyte Cells for Rapid Chronic Wound Healing.

Diabetes patients are at risk of having chronic wounds, which would take months to years to resolve naturally. Chronic wounds can be countered using the electrical stimulation technique (EST) by dielectrophoresis (DEP), which is label-free, highly sensitive, and selective for particle trajectory. In this study, we focus on the validation of polystyrene particles of 3.2 and 4.8 µm to predict the behavior of keratinocytes to estimate their crossover frequency (fXO) using the DEP force (FDEP) for particle manipulation. MyDEP is a piece of java-based stand-alone software used to consider the dielectric particle response to AC electric fields and analyzes the electrical properties of biological cells. The prototypic 3.2 and 4.8 µm polystyrene particles have fXO values from MyDEP of 425.02 and 275.37 kHz, respectively. Fibroblast cells were also subjected to numerical analysis because the interaction of keratinocytes and fibroblast cells is essential for wound healing. Consequently, the predicted fXO from the MyDEP plot for keratinocyte and fibroblast cells are 510.53 and 28.10 MHz, respectively. The finite element method (FEM) is utilized to compute the electric field intensity and particle trajectory based on DEP and drag forces. Moreover, the particle trajectories are quantified in a high and low conductive medium. To justify the simulation, further DEP experiments are carried out by applying a non-uniform electric field to a mixture of different sizes of polystyrene particles and keratinocyte cells, and these results are well agreed. The alive keratinocyte cells exhibit NDEP force in a highly conductive medium from 100 kHz to 25 MHz. 2D/3D motion analysis software (DIPP-MotionV) can also perform image analysis of keratinocyte cells and evaluate the average speed, acceleration, and trajectory position. The resultant NDEP force can align the keratinocyte cells in the wound site upon suitable applied frequency. Thus, MyDEP estimates the Clausius-Mossotti factors (CMF), FEM computes the cell trajectory, and the experimental results of prototypic polystyrene particles are well correlated and provide an optimistic response towards keratinocyte cells for rapid wound healing applications.

First-Principles Studies for Electronic Structure and Optical Properties of p-Type Calcium Doped α-Ga2O3.

Gallium oxide (Ga2O3) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of p-type Ga2O3 is a key problem that hinders its potential for realistic power applications. In this paper, pure α-Ga2O3 and Ca-doped α-Ga2O3 band structure, the density of states, charge density distribution, and optical properties were determined by a first-principles generalized gradient approximation plane-wave pseudopotential method based on density functional theory. It was found that calcium (Ca) doping decreases the bandgap by introducing deep acceptor energy levels as the intermediate band above the valence band maximum. This intermediate valence band mainly consists of Ca 3p and O 2p orbitals and is adequately high in energy to provide an opportunity for p-type conductivity. Moreover, Ca doping enhances the absorptivity and reflectivity become low in the visible region. Aside, transparency decreases compared to the pure material. The optical properties were studied and clarified by electrons-photons interband transitions along with the complex dielectric function's imaginary function.

Tunable absorber embedded with GST mediums and trilayer graphene strip microheaters.

Investigation was made of the optical response of metal-dielectric stacks-based cavity structures embedded with graphene microheaters for the purpose of perfect absorption. The absorber configuration exploits the Ge2Sb2Te5 (GST) phase changing medium, and the effects of different parametric and operational conditions on the absorption spectra were explored. The refractive indices of GST layers can be manipulated by the external electrical pulses applied to microheaters. The amplitude and duration of electrical pulses define the crystallinity ratio of the used GST mediums. The results revealed achieving perfect absorption (> 99%) in the visible and infrared (IR) regimes of the electromagnetic spectrum upon incorporating two thin GST layers of different thicknesses (in the stack) in the amorphous state. The proposed configuration showed the capability of introducing independent transition state (amorphous and/or crystalline) for each GST layer-the visible regime could be extended to the IR regime, and the perfect absorption peak in the IR regime could be broadened and red-shifted. It is expected that the structure would find potential applications in active photonic devices, infrared imaging, detectors and tunable absorbers.

Vertical MoS2on SiO2/Si and Graphene: Effect of Surface Morphology on Photoelectrochemical Properties.

Two-dimensional materials have attracted intensive attention recently due to their unique optical and electronic properties and their promising applications in water splitting and solar cells. As a representative layer-structured of transition metal dichalcogenides, MoS2has attracted considerable devotion owing to its exceptional photo and electro properties. Here, we show that the chemical vapour deposition (CVD) growth of MoS2on Si photocathode and graphene/Si photocathode can be used to prepare photoelectrocatalysts for water splitting. We explore a bottom-up method to grow vertical heterostructures of MoS2and graphene by using the two-step CVD. Graphene is first grown through ambient-pressure CVD on a Cu substrate and then transferred onto SiO2/Si substrate by using the chemical wet transfer followed by the second CVD method to grow MoS2over the graphene/SiO2/Si. The effect of the growth temperatures of MoS2is studied, and the optimum temperature is 800 °C. The MoS2produced at 800 °C has the highest photocurrent density at -0.23 mA cm-2in 0.5 M Na2SO4and -0.51 mA cm-2in 0.5 M H2SO4at -0.8 V vs. Ag/AgCl. The linear sweep voltammetry shows that MoS2in 0.5 M H2SO4has about 55% higher photocurrent density than MoS2in Na2SO4due to the higher protons (H+) in the H2SO4electrolyte solution, which are sufficiently charged to reduce to H2and, therefore hydrogen evolves more rapidly where the photocurrent density and hydrogen generation can be enhanced. MoS2/graphene/SiO2/Si (MGS) has -0.07 mA cm-2at -0.8 V vs. Ag/AgCl of photocurrent density, which is 70% lower than that of bare MoS2because MGS is thicker compared with MoS2. Thus, MoS2has potential as a photocatalyst in photoelectrochemical water splitting. The structure and the morphology of MoS2play an important role in determining the photocurrent performance.

Vertical MoS2 on SiO2/Si and graphene: effect of surface morphology on photoelectrochemical properties.

Two-dimensional materials have attracted intensive attention recently due to their unique optical and electronic properties and their promising applications in water splitting and solar cells. As a representative layer-structured of transition metal dichalcogenides, MoS2 has attracted considerable devotion owing to its exceptional photo and electro properties. Here, we show that the chemical vapour deposition (CVD) growth of MoS2 on Si photocathode and graphene/Si photocathode can be used to prepare photoelectrocatalysts for water splitting. We explore a bottom-up method to grow vertical heterostructures of MoS2 and graphene by using the two-step CVD. Graphene is first grown through ambient-pressure CVD on a Cu substrate and then transferred onto SiO2/Si substrate by using the chemical wet transfer followed by the second CVD method to grow MoS2 over the graphene/SiO2/Si. The effect of the growth temperatures of MoS2 is studied, and the optimum temperature is 800 °C. The MoS2 produced at 800 °C has the highest photocurrent density at -0.23 mA cm-2 in 0.5 M Na2SO4 and -0.51 mA cm-2 in 0.5 M H2SO4 at -0.8 V versus Ag/AgCl. The linear sweep voltammetry shows that MoS2 in 0.5 M H2SO4 has about 55% higher photocurrent density than MoS2 in Na2SO4 due to the higher concentration of protons (H+) in the H2SO4 electrolyte solution. Protons are reduced to H2 at lower overvoltage and hydrogen generation is thus enhanced at higher photocurrent density. MoS2/graphene/SiO2/Si (MGS) has -0.07 mA cm-2 at -0.8 V versus Ag/AgCl of photocurrent density, which is 70% lower than that of bare MoS2 because MGS is thicker compared with MoS2. Thus, MoS2 has potential as a photocatalyst in photoelectrochemical water splitting. The structure and the morphology of MoS2 play an important role in determining the photocurrent performance.