Large Magnetoresistance of Isolated Domain Walls in La2/3 Sr1/3 MnO3 Nanowires.

Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design of efficient spintronic devices. Half-metals are amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at spin textures. Among half metals, La1- x Srx MnO3 (LSMO) manganites are considered as promising candidates for their robust half-metallic ground state, Curie temperature above room temperature (Tc = 360 K, for x = 1/3), and chemical stability. Yet domain wall magnetoresistance is poorly understood, with large discrepancies in the reported values and conflicting interpretation of experimental data due to the entanglement of various source of magnetoresistance, namely, spin accumulation, anisotropic magnetoresistance, and colossal magnetoresistance. In this work, the domain wall magnetoresistance is measured in LSMO cross-shape nanowires with single-domain walls nucleated across the current path. Magnetoresistance values above 10% are found to be originating at the spin accumulation caused by the mistracking effect of the spin texture of the domain wall by the conduction electrons. Fundamentally, this result shows the importance on non-adiabatic processes at spin textures despite the strong Hund coupling to the localized t2g electrons of the manganite. These large magnetoresistance values are high enough for encoding and reading magnetic bits in future oxide spintronic sensors.

Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors.

We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.

Direct Transformation of Crystalline MoO3 into Few-Layers MoS2.

We fabricated large-area atomically thin MoS2 layers through the direct transformation of crystalline molybdenum trioxide (MoO3) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300 × 300 µm2, 2-4 layers in thickness and show a marked p-type behavior. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements.

Large Magnetoelectric Coupling Near Room Temperature in Synthetic Melanostibite Mn2 FeSbO6.

Multiferroic materials exhibit two or more ferroic orders and have potential applications as multifunctional materials in the electronics industry. A coupling of ferroelectricity and ferromagnetism is hereby particularly promising. We show that the synthetic melanostibite mineral Mn2 FeSbO6 (R3‾ space group) with ilmenite-type structure exhibits cation off-centering that results in alternating modulated displacements, thus allowing antiferroelectricity to occur. Massive magnetoelectric coupling (MEC) and magnetocapacitance effect of up to 4000 % was detected at a record high temperature of 260 K. The multiferroic behavior is based on the imbalance of cationic displacements caused by a magnetostrictive mechanism, which sets up an unprecedented example to pave the way for the development of highly effective MEC devices operational at or near room temperature.

Magnetic Interactions in the Double Perovskites R2NiMnO6 (R = Tb, Ho, Er, Tm) Investigated by Neutron Diffraction.

R2NiMnO6 (R = Tb, Ho, Er, Tm) perovskites have been prepared by soft-chemistry techniques followed by high oxygen-pressure treatments; they have been investigated by X-ray diffraction, neutron powder diffraction (NPD), and magnetic measurements. In all cases the crystal structure is defined in the monoclinic P21/n space group, with an almost complete order between Ni(2+) and Mn(4+) cations in the octahedral perovskite sublattice. The low temperature NPD data and the macroscopic magnetic measurements indicate that all the compounds are ferrimagnetic, with a net magnetic moment different from zero and a distinct alignment of Ni and Mn spins depending on the nature of the rare-earth cation. The magnetic structures are different from the one previously reported for La2NiMnO6, with a ferromagnetic structure involving Mn(4+) and Ni(2+) moments. This spin alignment can be rationalized taking into account the Goodenough-Kanamori rules. The magnetic ordering temperature (TCM) decreases abruptly as the size of the rare earth decreases, since TCM is mainly influenced by the superexchange interaction between Ni(2+) and Mn(4+) (Ni(2+)-O-Mn(4+) angle) and this angle decreases with the rare-earth size. The rare-earth magnetic moments participate in the magnetic structures immediately below TCM.