Distinguishing Quasiparticle-Phonon Interactions by Ultrahigh-Resolution Lifetime Measurements.

We present a determination of quasiparticle-phonon interaction strengths at surfaces through measurements of phonon spectra with ultrahigh energy resolution. The lifetimes of low energy surface phonons on a pristine Ru(0001) surface were determined over a wide range of temperatures and an analysis of the temperature dependence enables us to attribute separate contributions from electron-phonon interactions, phonon-phonon interactions, and defect-phonon interactions. Strong electron-phonon interactions are evident at all temperatures and we show they dominate over phonon-phonon interactions below 400 K.

Decoupling excitons from high-frequency vibrations in organic molecules.

The coupling of excitons in π-conjugated molecules to high-frequency vibrational modes, particularly carbon-carbon stretch modes (1,000-1,600 cm-1) has been thought to be unavoidable1,2. These high-frequency modes accelerate non-radiative losses and limit the performance of light-emitting diodes, fluorescent biomarkers and photovoltaic devices. Here, by combining broadband impulsive vibrational spectroscopy, first-principles modelling and synthetic chemistry, we explore exciton-vibration coupling in a range of π-conjugated molecules. We uncover two design rules that decouple excitons from high-frequency vibrations. First, when the exciton wavefunction has a substantial charge-transfer character with spatially disjoint electron and hole densities, we find that high-frequency modes can be localized to either the donor or acceptor moiety, so that they do not significantly perturb the exciton energy or its spatial distribution. Second, it is possible to select materials such that the participating molecular orbitals have a symmetry-imposed non-bonding character and are, thus, decoupled from the high-frequency vibrational modes that modulate the π-bond order. We exemplify both these design rules by creating a series of spin radical systems that have very efficient near-infrared emission (680-800 nm) from charge-transfer excitons. We show that these systems have substantial coupling to vibrational modes only below 250 cm-1, frequencies that are too low to allow fast non-radiative decay. This enables non-radiative decay rates to be suppressed by nearly two orders of magnitude in comparison to π-conjugated molecules with similar bandgaps. Our results show that losses due to coupling to high-frequency modes need not be a fundamental property of these systems.

Photoinduced Electronic and Spin Topological Phase Transitions in Monolayer Bismuth.

Ultrathin bismuth exhibits rich physics including strong spin-orbit coupling, ferroelectricity, nontrivial topology, and light-induced structural dynamics. We use ab initio calculations to show that light can induce structural transitions to four transient phases in bismuth monolayers. These light-induced phases exhibit nontrivial topological character, which we illustrate using the recently introduced concept of spin bands and spin-resolved Wilson loops. Specifically, we find that the topology changes via the closing of the electron and spin band gaps during photoinduced structural phase transitions, leading to distinct edge states. Our study provides strategies to tailor electronic and spin topology via ultrafast control of photoexcited carriers and associated structural dynamics.

Negative Refraction of Weyl Phonons at Twin Quartz Interfaces.

In Nature, α-quartz crystals frequently form contact twins, which are two adjacent crystals with the same chemical structure but different crystallographic orientation, sharing a common lattice plane. As α-quartz crystallizes in a chiral space group, such twinning can occur between enantiomorphs with the same handedness or with opposite handedness. Here, we use first-principles methods to investigate the effect of twinning and chirality on the bulk and surface phonon spectra, as well as on the topological properties of phonons in α-quartz. We demonstrate that, even though the dispersion appears identical for all twins along all high-symmetry lines and at all high-symmetry points in the Brillouin zone, the dispersions can be distinct at generic momenta for some twin structures. Furthermore, when the twinning occurs between different enantiomorphs, the charges of all Weyl nodal points flip, which leads to mirror symmetric isofrequency contours of the surface arcs on certain surfaces. We show that this allows negative refraction to occur at interfaces between certain twins of α-quartz.

Microscopic theory of colour in lutetium hydride.

Nitrogen-doped lutetium hydride has recently been proposed as a near-ambient-conditions superconductor. Interestingly, the sample transforms from blue to pink to red as a function of pressure, but only the pink phase is claimed to be superconducting. Subsequent experimental studies have failed to reproduce the superconductivity, but have observed pressure-driven colour changes including blue, pink, red, violet, and orange. However, discrepancies exist among these experiments regarding the sequence and pressure at which these colour changes occur. Given the claimed relationship between colour and superconductivity, understanding colour changes in nitrogen-doped lutetium hydride may hold the key to clarifying the possible superconductivity in this compound. Here, we present a full microscopic theory of colour in lutetium hydride, revealing that hydrogen-deficient LuH2 is the only phase which exhibits colour changes under pressure consistent with experimental reports, with a sequence blue-violet-pink-red-orange. The concentration of hydrogen vacancies controls the precise sequence and pressure of colour changes, rationalising seemingly contradictory experiments. Nitrogen doping also modifies the colour of LuH2 but it plays a secondary role compared to hydrogen vacancies. Therefore, we propose hydrogen-deficient LuH2 as the key phase for exploring the superconductivity claim in the lutetium-hydrogen system. Finally, we find no phonon-mediated superconductivity near room temperature in the pink phase.

Excitonic insulator to superconductor phase transition in ultra-compressed helium.

Helium, the second most abundant element in the universe, exhibits an extremely large electronic band gap of about 20 eV at ambient pressures. While the metallization pressure of helium has been accurately determined, thus far little attention has been paid to the specific mechanisms driving the band-gap closure and electronic properties of this quantum crystal in the terapascal regime (1 TPa = 10 Mbar). Here, we employ density functional theory and many-body perturbation calculations to fill up this knowledge gap. It is found that prior to reaching metallicity helium becomes an excitonic insulator (EI), an exotic state of matter in which electrostatically bound electron-hole pairs may form spontaneously. Furthermore, we predict metallic helium to be a superconductor with a critical temperature of ≈ 20 K just above its metallization pressure and of ≈ 70 K at 100 TPa. These unforeseen phenomena may be critical for improving our fundamental understanding and modeling of celestial bodies.

Layered BiOI single crystals capable of detecting low dose rates of X-rays.

Detecting low dose rates of X-rays is critical for making safer radiology instruments, but is limited by the absorber materials available. Here, we develop bismuth oxyiodide (BiOI) single crystals into effective X-ray detectors. BiOI features complex lattice dynamics, owing to the ionic character of the lattice and weak van der Waals interactions between layers. Through use of ultrafast spectroscopy, first-principles computations and detailed optical and structural characterisation, we show that photoexcited charge-carriers in BiOI couple to intralayer breathing phonon modes, forming large polarons, thus enabling longer drift lengths for the photoexcited carriers than would be expected if self-trapping occurred. This, combined with the low and stable dark currents and high linear X-ray attenuation coefficients, leads to strong detector performance. High sensitivities reaching 1.1 × 103 µC Gyair-1 cm-2 are achieved, and the lowest dose rate directly measured by the detectors was 22 nGyair s-1. The photophysical principles discussed herein offer new design avenues for novel materials with heavy elements and low-dimensional electronic structures for (opto)electronic applications.

Luminescence Enhancement Due to Symmetry Breaking in Doped Halide Perovskite Nanocrystals.

Metal-halide perovskite nanocrystals have demonstrated excellent optoelectronic properties for light-emitting applications. Isovalent doping with various metals (M2+) can be used to tailor and enhance their light emission. Although crucial to maximize performance, an understanding of the universal working mechanism for such doping is still missing. Here, we directly compare the optical properties of nanocrystals containing the most commonly employed dopants, fabricated under identical synthesis conditions. We show for the first time unambiguously, and supported by first-principles calculations and molecular orbital theory, that element-unspecific symmetry-breaking rather than element-specific electronic effects dominate these properties under device-relevant conditions. The impact of most dopants on the perovskite electronic structure is predominantly based on local lattice periodicity breaking and resulting charge carrier localization, leading to enhanced radiative recombination, while dopant-specific hybridization effects play a secondary role. Our results suggest specific guidelines for selecting a dopant to maximize the performance of perovskite emitters in the desired optoelectronic devices.

Phonon-Limited Valley Polarization in Transition-Metal Dichalcogenides.

The ability to selectively photoexcite at different Brillouin zone valleys forms the basis of valleytronics and other valley-related physics. Symmetry arguments combined with static lattice first-principles calculations suggest an ideal 100% valley polarization in transition-metal dichalcogenides under circularly polarized light. However, experimental reports of the valley polarization range from 32% to almost 100%. Possible explanations for this discrepancy include phonon-mediated transitions, which would place a fundamental limit to valley polarization, and defect-mediated transitions, which could, in principle, be reduced with cleaner samples. We explore the phonon-mediated fundamental limit by performing calculations of phonon-mediated optical absorption for circularly polarized light entirely from the first principles. We also use group theory to reveal the microscopic mechanisms behind the phonon-mediated excitations, discovering contributions from several individual phonon modes and from multiphonon processes. Overall, our calculations show that the phonon-limited valley polarization is around 70% at room temperature for state-of-the-art valleytronic materials including MoSe_{2}, MoS_{2}, WS_{2}, WSe_{2}, and MoTe_{2}. This fundamental limit implies that sufficiently pure transition-metal dichalcogenides are ideal candidates for valleytronics applications.

Prediction and realisation of high mobility and degenerate p-type conductivity in CaCuP thin films.

Phosphides are interesting candidates for hole transport materials and p-type transparent conducting applications, capable of achieving greater valence band dispersion than their oxide counterparts due to the higher lying energy and increased size of the P 3p orbital. After computational identification of the indirect-gap semiconductor CaCuP as a promising candidate, we now report reactive sputter deposition of phase-pure p-type CaCuP thin films. Their intrinsic hole concentration and hole mobility exceed 1 × 1020 cm-3 and 35 cm2 V-1 s-1 at room temperature, respectively. Transport calculations indicate potential for even higher mobilities. Copper vacancies are identified as the main source of conductivity, displaying markedly different behaviour compared to typical p-type transparent conductors, leading to improved electronic properties. The optical transparency of CaCuP films is lower than expected from first principles calculations of phonon-mediated indirect transitions. This discrepancy could be partly attributed to crystalline imperfections within the films, increasing the strength of indirect transitions. We determine the transparent conductor figure of merit of CaCuP films as a function of composition, revealing links between stoichiometry, crystalline quality, and opto-electronic properties. These findings provide a promising initial assessment of the viability of CaCuP as a p-type transparent contact.

Investigation of Singlet Fission-Halide Perovskite Interfaces.

A method for improving the efficiency of solar cells is combining a low-band-gap semiconductor with a singlet fission material (which converts one high-energy singlet into two low-energy triplets following photoexcitation). Here, we present a study of the interface between singlet fission molecules and low-band-gap halide pervoskites. We briefly present 150 experiments screening for triplet transfer into a halide perovskite. However, in all cases, triplet transfer was not observed. This motivated us to understand the halide perovskite-singlet fission interface better by carrying out first-principles calculations using tetracene and cesium lead iodide. We found that tetracene molecules/thin films preferentially orient themselves parallel to/perpendicular to the halide perovskite's surface. This result is in agreement with simulations of tetracene (and other rodlike molecules) on a wide range of inorganic semiconductors. We present formation energies of all interfaces, which are significantly less favorable than for bulk tetracene, indicative of weak interaction at the interface. It was not possible to calculate excitonic states at the full interface due to computational limitations, so we instead present highly speculative toy interfaces between tetracene and a halide-perovskite-like structure. In these models, we focus on replicating tetracene's electronic states correctly. We find that tetracene's singlet and triplet energies are comparable to that of bulk tetracene, and the triplet is strongly localized on a single tetracene molecule, even at an interface. Our work provides new understanding of the interface between tetracene and halide perovskites, explores the potential for modeling excitons at interfaces, and begins to explain the difficulties in extracting triplets directly into inorganic semiconductors.

Lattice Dynamics in the NASICON NaZr2(PO4)3 Solid Electrolyte from Temperature-Dependent Neutron Diffraction, NMR, and Ab Initio Computational Studies.

Natrium super ionic conductor (NASICON) compounds form a rich and highly chemically tunable family of crystalline materials that are of widespread interest because they include exemplars with high ionic conductivity, low thermal expansion, and redox tunability. This makes them suitable candidates for applications ranging from solid-state batteries to nuclear waste storage materials. The key to an understanding of these properties, including the origins of effective cation transport and low, anisotropic (and sometimes negative) thermal expansion, lies in the lattice dynamics associated with specific details of the crystal structure. Here we closely examine the prototypical NASICON compound, NaZr2(PO4)3, and obtain detailed insights into such behavior via variable-temperature neutron diffraction and 23Na and 31P solid-state NMR studies, coupled with comprehensive density functional theory-based calculations of NMR parameters. Temperature-dependent NMR studies yield some surprising trends in the chemical shifts and the quadrupolar coupling constants that are not captured by computation unless the underlying vibrational modes of the crystal are explicitly taken into account. Furthermore, the trajectories of the sodium, zirconium, and oxygen atoms in our dynamical simulations show good qualitative agreement with the anisotropic thermal parameters obtained at higher temperatures by neutron diffraction. The work presented here widens the utility of NMR crystallography to include thermal effects as a unique probe of interesting lattice dynamics in functional materials.

Phonons as a platform for non-Abelian braiding and its manifestation in layered silicates.

Topological phases of matter have revolutionised the fundamental understanding of band theory and hold great promise for next-generation technologies such as low-power electronics or quantum computers. Single-gap topologies have been extensively explored, and a large number of materials have been theoretically proposed and experimentally observed. These ideas have recently been extended to multi-gap topologies with band nodes that carry non-Abelian charges, characterised by invariants that arise by the momentum space braiding of such nodes. However, the constraints placed by the Fermi-Dirac distribution to electronic systems have so far prevented the experimental observation of multi-gap topologies in real materials. Here, we show that multi-gap topologies and the accompanying phase transitions driven by braiding processes can be readily observed in the bosonic phonon spectra of known monolayer silicates. The associated braiding process can be controlled by means of an electric field and epitaxial strain, and involves, for the first time, more than three bands. Finally, we propose that the band inversion processes at the Γ point can be tracked by following the evolution of the Raman spectrum, providing a clear signature for the experimental verification of the band inversion accompanied by the braiding process.

Narrow-band high-lying excitons with negative-mass electrons in monolayer WSe2.

Monolayer transition-metal dichalcogenides (TMDCs) show a wealth of exciton physics. Here, we report the existence of a new excitonic species, the high-lying exciton (HX), in single-layer WSe2 with an energy of ~3.4 eV, almost twice the band-edge A-exciton energy, with a linewidth as narrow as 5.8 meV. The HX is populated through momentum-selective optical excitation in the K-valleys and is identified in upconverted photoluminescence (UPL) in the UV spectral region. Strong electron-phonon coupling results in a cascaded phonon progression with equidistant peaks in the luminescence spectrum, resolvable to ninth order. Ab initio GW-BSE calculations with full electron-hole correlations explain HX formation and unmask the admixture of upper conduction-band states to this complex many-body excitation. These calculations suggest that the HX is comprised of electrons of negative mass. The coincidence of such high-lying excitonic species at around twice the energy of band-edge excitons rationalizes the excitonic quantum-interference phenomenon recently discovered in optical second-harmonic generation (SHG) and explains the efficient Auger-like annihilation of band-edge excitons.

Impact of Orientational Glass Formation and Local Strain on Photo-Induced Halide Segregation in Hybrid Metal-Halide Perovskites.

Band gap tuning of hybrid metal-halide perovskites by halide substitution holds promise for tailored light absorption in tandem solar cells and emission in light-emitting diodes. However, the impact of halide substitution on the crystal structure and the fundamental mechanism of photo-induced halide segregation remain open questions. Here, using a combination of temperature-dependent X-ray diffraction and calorimetry measurements, we report the emergence of a disorder- and frustration-driven orientational glass for a wide range of compositions in CH3NH3Pb(Cl x Br1-x )3. Using temperature-dependent photoluminescence measurements, we find a correlation between halide segregation under illumination and local strains from the orientational glass. We observe no glassy behavior in CsPb(Cl x Br1-x )3, highlighting the importance of the A-site cation for the structure and optoelectronic properties. Using first-principles calculations, we identify the local preferential alignment of the organic cations as the glass formation mechanism. Our findings rationalize the superior photostability of mixed-cation metal-halide perovskites and provide guidelines for further stabilization strategies.

Systematic improvement of molecular excited state calculations by inclusion of nuclear quantum motion: A mode-resolved picture and the effect of molecular size.

The energies of molecular excited states arise as solutions to the electronic Schrödinger equation and are often compared to experiment. At the same time, nuclear quantum motion is known to be important and to induce a redshift of excited state energies. However, it is thus far unclear whether incorporating nuclear quantum motion in molecular excited state calculations leads to a systematic improvement of their predictive accuracy, making further investigation necessary. Here, we present such an investigation by employing two first-principles methods for capturing the effect of quantum fluctuations on excited state energies, which we apply to the Thiel set of organic molecules. We show that accounting for zero-point motion leads to much improved agreement with experiment, compared to "static" calculations that only account for electronic effects, and the magnitude of the redshift can become as large as 1.36 eV. Moreover, we show that the effect of nuclear quantum motion on excited state energies largely depends on the molecular size, with smaller molecules exhibiting larger redshifts. Our methodology also makes it possible to analyze the contribution of individual vibrational normal modes to the redshift of excited state energies, and in several molecules, we identify a limited number of modes dominating this effect. Overall, our study provides a foundation for systematically quantifying the shift of excited state energies due to nuclear quantum motion and for understanding this effect at a microscopic level.

Synthesis of Weaire-Phelan Barium Polyhydride.

By combining pressures up to 50 GPa and temperatures of 1200 K, we synthesize the novel barium hydride, Ba8H46, stable down to 27 GPa. We use Raman spectroscopy, X-ray diffraction, and first-principles calculations to determine that this compound adopts a highly symmetric Pm3¯n structure with an unusual 534:1 hydrogen-to-barium ratio. This singular stoichiometry corresponds to the well-defined type-I clathrate geometry. This clathrate consists of a Weaire-Phelan hydrogen structure with the barium atoms forming a topologically close-packed phase. In particular, the structure is formed by H20 and H24 clathrate cages showing substantially weakened H-H interactions. Density functional theory (DFT) demonstrates that cubic Pm3¯n Ba8H46 requires dynamical effects to stabilize the H20 and H24 clathrate cages.

Charge Carrier Localization in Doped Perovskite Nanocrystals Enhances Radiative Recombination.

Nanocrystals based on halide perovskites offer a promising material platform for highly efficient lighting. Using transient optical spectroscopy, we study excitation recombination dynamics in manganese-doped CsPb(Cl,Br)3 perovskite nanocrystals. We find an increase in the intrinsic excitonic radiative recombination rate upon doping, which is typically a challenging material property to tailor. Supported by ab initio calculations, we can attribute the enhanced emission rates to increased charge carrier localization through lattice periodicity breaking from Mn dopants, which increases the overlap of electron and hole wave functions locally and thus the oscillator strength of excitons in their vicinity. Our report of a fundamental strategy for improving luminescence efficiencies in perovskite nanocrystals will be valuable for maximizing efficiencies in light-emitting applications.

Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors.

Twist-engineering of the electronic structure in van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore not particularly susceptible to twisting. Here, we report that high-lying excitons in bilayer WSe2 can be tuned over 235 meV by twisting, with a twist-angle susceptibility of 8.1 meV/°, an order of magnitude larger than that of the band-edge A-exciton. This tunability arises because the electronic states associated with upper conduction bands delocalize into the chalcogenide atoms. The effect gives control over excitonic quantum interference, revealed in selective activation and deactivation of electromagnetically induced transparency (EIT) in second-harmonic generation. Such a degree of freedom does not exist in conventional dilute atomic-gas systems, where EIT was originally established, and allows us to shape the frequency dependence, i.e., the dispersion, of the optical nonlinearity.

Direct band gap and strong Rashba effect in van der Waals heterostructures of InSe and Sb single layers.

Van der Waals heterostructures formed by stacking different types of 2D materials are attracting increasing attention due to new emergent physical properties such as interlayer excitons. Recently synthesized atomically thin indium selenide (InSe) and antimony (Sb) individually exhibit interesting electronic properties such as high electron mobility in the former and high hole mobility in the latter. In this work, we present a first-principles investigation on the stability and electronic properties of ultrathin bilayer heterostructures composed of InSe and Sb single layers. The calculated electronic band structures reveal a direct band gap semiconducting nature of the InSe/Sb heterostructures independent of stacking pattern. Taking spin-orbit coupling (SOC) into account, we find a large Rashba spin splitting at the bottom of conduction band, which originates from the atomic SOC with the symmetry breaking in the heterostructure. The strength of the Rashba spin splitting can be tuned by applying in-plane biaxial strain or an out-of-plane external electric field. The presence of large Rashba spin splitting together with a suitable band gap in InSe/Sb bilayer heterostructures make them promising candidates for spin field-effect transistor and optoelectronic device applications.