Electro-Mechanical Characterization and Modeling of a Broadband Piezoelectric Microgenerator Based on Lithium Niobate.

Vibration energy harvesting based on piezoelectric transducers is an attractive choice to replace single-use batteries in powering Wireless Sensor Nodes (WSNs). As of today, their widespread application is hindered due to low operational bandwidth and the conventional use of lead-based materials. The Restriction of Hazardous Substances legislation (RoHS) implemented in the European Union restricts the use of lead-based piezoelectric materials in future electronic devices. This paper investigates lithium niobate (LiNbO3) as a lead-free material for a high-performance broadband Piezoelectric Energy Harvester (PEH). A single-clamped, cantilever beam-based piezoelectric microgenerator with a mechanical footprint of 1 cm2, working at a low resonant frequency of 200 Hz, with a high piezoelectric coupling coefficient and broad bandwidth, was designed and microfabricated, and its performance was evaluated. The PEH device, with an acceleration of 1 g delivers a maximum output RMS power of nearly 35 µW/cm2 and a peak voltage of 6 V for an optimal load resistance at resonance. Thanks to a high squared piezoelectric electro-mechanical coupling coefficient (k2), the device offers a broadband operating frequency range above 10% of the central frequency. The Mason electro-mechanical equivalent circuit was derived, and a SPICE model of the device was compared with experimental results. Finally, the output voltage of the harvester was rectified to provide a DC output stored on a capacitor, and it was regulated and used to power an IoT node at an acceleration of as low as 0.5 g.

A Self-Powered and Battery-Free Vibrational Energy to Time Converter for Wireless Vibration Monitoring.

Wireless sensor nodes (WSNs) are the fundamental part of an Internet of Things (IoT) system for detecting and transmitting data to a master node for processing. Several research studies reveal that one of the disadvantages of conventional, battery-powered WSNs, however, is that they typically require periodic maintenance. This paper aims to contribute to existing research studies on this issue by exploring a new energy-autonomous and battery-free WSN concept for monitor vibrations. The node is self-powered from the conversion of ambient mechanical vibration energy into electrical energy through a piezoelectric transducer implemented with lead-free lithium niobate piezoelectric material to also explore solutions that go towards a greener and more sustainable IoT. Instead of implementing any particular sensors, the vibration measurement system exploits the proportionality between the mechanical power generated by a piezoelectric transducer and the time taken to store it as electrical energy in a capacitor. This helps reduce the component count with respect to conventional WSNs, as well as energy consumption and production costs, while optimizing the overall node size and weight. The readout is therefore a function of the time it takes for the energy storage capacitor to charge between two constant voltage levels. The result of this work is a system that includes a specially designed lead-free piezoelectric vibrational transducer and a battery-less sensor platform with Bluetooth low energy (BLE) connectivity. The system can harvest energy in the acceleration range [0.5 g-1.2 g] and measure vibrations with a limit of detection (LoD) of 0.6 g.

Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications.

Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, charge storage, and charge transfer to the sensing node. To prove this concept, a backside illumination (BSI), p-type, 2-µm-pitch pixel was designed. It integrates a vertical pinned photo gate (PPG), a buried vertical transfer gate (TG), sidewall capacitive deep trench isolation (CDTI), and backside oxide-nitride-oxide (ONO) stack. The designed pixel was fabricated with variations of key parameters for optimization. Testing results showed the following achievements: 13,000 h+ full-well capacity with no lag for charge transfer, 80% quantum efficiency (QE) at 550-nm wavelength, 5 h+/s dark current at 60 °C, 2 h+ temporal noise floor, and 75 dB dynamic range. In comparison with conventional pixel design, the proposed concept could improve CIS performance.

Ionic screening effect on low-frequency drain current fluctuations in liquid-gated nanowire FETs.

The ionic screening effect plays an important role in determining the fundamental surface properties within liquid-semiconductor interfaces. In this study, we investigated the characteristics of low-frequency drain current noise in liquid-gated nanowire (NW) field effect transistors (FETs) to obtain physical insight into the effect of ionic screening on low-frequency current fluctuation. When the NW FET was operated close to the gate voltage corresponding to the maximum transconductance, the magnitude of the low-frequency noise for the NW exposed to a low-ionic-strength buffer (0.001 M) was approximately 70% greater than that when exposed to a high-ionic-strength buffer (0.1 M). We propose a noise model, considering the charge coupling efficiency associated with the screening competition between the electrolyte buffer and the NW, to describe the ionic screening effect on the low-frequency drain current noise in liquid-gated NW FET systems. This report not only provides a physical understanding of the ionic screening effect behind the low-frequency current noise in liquid-gated FETs but also offers useful information for developing the technology of NW FETs with liquid-gated architectures for application in bioelectronics, nanosensors, and hybrid nanoelectronics.

A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering.

The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.

Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

Bundling of GaAs nanowires: a case of adhesion-induced self-assembly of nanowires.

The origin of deflections of semiconductor nanowires (NWs) induced by an electron beam in scanning electron microscopy has been subject to different interpretations. Similarly, the subsequent clumping together of NWs into bundles is frequently observed, but no interpretation has yet been advanced. Here we present results on the bundling of NWs following the intentional bending by an electron beam. Furthermore, we extend the concept of lateral collapse, usually applied to fibrillar architectures mimicking the adhesiveness of natural surfaces (the so-called Gecko effect), to analyze the mechanism of the NW bundle formation. We demonstrate how the geometry of the NW arrays and the mechanical properties of the composing materials govern bundling and how these parameters should be taken into account in the design of NW arrays both for avoiding vertical misalignment when detrimental and for achieving patterning of NW arrays into nanoarchitectures.

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires.

The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these techniques. Nevertheless, Au could deteriorate the electric properties of SC and the use of other metal catalysts will be mandatory if NW are to be designed for innovating electronic. First, this article's focus will be on SiGe NW's growth using Au catalyst. The authors managed to grow SiGe NW between 350 and 400°C. Ge concentration (x) in Si1-xGex NW has been successfully varied by modifying the gas flow ratio: R = GeH4/(SiH4 + GeH4). Characterization (by Raman spectroscopy and XRD) revealed concentrations varying from 0.2 to 0.46 on NW grown at 375°C, with R varying from 0.05 to 0.15. Second, the results of Si NW growths by CVD using alternatives catalysts such as platinum-, palladium- and nickel-silicides are presented. This study, carried out on a LPCVD furnace, aimed at defining Si NW growth conditions when using such catalysts. Since the growth temperatures investigated are lower than the eutectic temperatures of these Si-metal alloys, VSS growth is expected and observed. Different temperatures and HCl flow rates have been tested with the aim of minimizing 2D growth which induces an important tapering of the NW. Finally, mechanical characterization of single NW has been carried out using an AFM method developed at the LTM. It consists in measuring the deflection of an AFM tip while performing approach-retract curves at various positions along the length of a cantilevered NW. This approach allows the measurement of as-grown single NW's Young modulus and spring constant, and alleviates uncertainties inherent in single point measurement.

An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires.

We present an improved atomic force microscopy (AFM) method to study the piezoelectric properties of nanostructures. An AFM tip is used to deform a free-standing piezoelectric nanowire. The deflection of the nanowire induces an electric potential via the piezoelectric effect, which is measured by the AFM coating tip. During the manipulation, the applied force, the forcing location and the nanowire's deflection are precisely known and under strict control. We show the measurements carried out on intrinsic GaN and n-doped GaN-AlN-GaN nanowires by using our method. The measured electric potential, as high as 200 mV for n-doped GaN-AlN-GaN nanowire and 150 mV for intrinsic GaN nanowire, have been obtained, these values are higher than theoretical calculations. Our investigation method is exceptionally useful to thoroughly examine and completely understand the piezoelectric phenomena of nanostructures. Our experimental observations intuitively reveal the great potential of piezoelectric nanostructures for converting mechanical energy into electricity. The piezoelectric properties of nanostructures, which are demonstrated in detail in this paper, represent a promising approach to fabricating cost-effective nano-generators and highly sensitive self-powered NEMS sensors.