Bond Breaking Kinetics in Mechanically Controlled Break Junction Experiments: A Bayesian Approach.

Break junction experiments allow investigating electronic and spintronic properties at the atomic and molecular scale. These experiments generate by their very nature broad and asymmetric distributions of the observables of interest, and thus, a full statistical interpretation is warranted. We show here that understanding the complete lifetime distribution is essential for obtaining reliable estimates. We demonstrate this for Au atomic point contacts by adopting Bayesian reasoning to make maximal use of all measured data to reliably estimate the distance to the transition state, x‡, the associated free energy barrier, ΔG‡, and the curvature, v, of the free energy surface. Obtaining robust estimates requires less experimental effort than with previous methods and fewer assumptions and thus leads to a significant reassessment of the kinetic parameters in this paradigmatic atomic-scale structure. Our proposed Bayesian reasoning offers a powerful and general approach when interpreting inherently stochastic data that yield broad, asymmetric distributions for which analytical models of the distribution may be developed.

Localized interlayer excitons in MoSe2-WSe2 heterostructures without a moiré potential.

Interlayer excitons (IXs) in MoSe2-WSe2 heterobilayers have generated interest as highly tunable light emitters in transition metal dichalcogenide (TMD) heterostructures. Previous reports of spectrally narrow (<1 meV) photoluminescence (PL) emission lines at low temperature have been attributed to IXs localized by the moiré potential between the TMD layers. We show that spectrally narrow IX PL lines are present even when the moiré potential is suppressed by inserting a bilayer hexagonal boron nitride (hBN) spacer between the TMD layers. We compare the doping, electric field, magnetic field, and temperature dependence of IXs in a directly contacted MoSe2-WSe2 region to those in a region separated by bilayer hBN. The doping, electric field, and temperature dependence of the narrow IX lines are similar for both regions, but their excitonic g-factors have opposite signs, indicating that the origin of narrow IX PL is not the moiré potential.

Phenalenyls as tunable excellent molecular conductors and switchable spin filters.

Phenalenyl-based radicals are stable radicals whose electronic properties can be tuned readily by heteroatom substitution. We employ density functional theory-based non-equilibrium Green's function (NEGF-DFT) calculations to show that this class of molecules exhibits tunable spin- and charge-transport properties in single molecule junctions. Our simulations identify the design principles and interplay between unusually high conductivity and strong spin-filtering.

Correlated Energy-Level Alignment Effects Determine Substituent-Tuned Single-Molecule Conductance.

The rational design of single-molecule electrical components requires a deep and predictive understanding of structure-function relationships. Here, we explore the relationship between chemical substituents and the conductance of metal-single-molecule-metal junctions, using functionalized oligophenylenevinylenes as a model system. Using a combination of mechanically controlled break-junction experiments and various levels of theory including non-equilibrium Green's functions, we demonstrate that the connection between gas-phase molecular electronic structure and in-junction molecular conductance is complicated by the involvement of multiple mutually correlated and opposing effects that contribute to energy-level alignment in the junction. We propose that these opposing correlations represent powerful new "design principles" because their physical origins make them broadly applicable, and they are capable of predicting the direction and relative magnitude of observed conductance trends. In particular, we show that they are consistent with the observed conductance variability not just within our own experimental results but also within disparate molecular series reported in the literature and, crucially, with the trend in variability across these molecular series, which previous simple models fail to explain. The design principles introduced here can therefore aid in both screening and suggesting novel design strategies for maximizing conductance tunability in single-molecule systems.

The role of initial and final states in molecular spectroscopies.

Interpreting experimental spectra of thin films of organic semiconductors is challenging, and understanding the relationship between experimental data obtained by different spectroscopic techniques requires a careful consideration of the initial and final states for each process. The discussion of spectroscopic data is frequently mired in confusion that originates in overlapping terminology with however distinct meaning in different spectroscopies. Here, we present a coherent framework that is capable of treating on equal footing most spectroscopies commonly used to investigate thin films of organic semiconductors. We develop a simple model for the expected energy level positions, as obtained by common spectroscopic techniques, and relate them to the energies of molecular states. Molecular charging energies in photoionization processes, as well as adsorption energies and the screening of molecular charges due to environmental polarization, are taken into account as the main causes for shifts of the measured spectroscopic features. We explain the relationship between these quantities, as well as with the transport gap, the optical gap and the exciton binding energy. Our considerations serve as a model for weakly interacting systems, e.g., various organic molecular crystals, where wave function hybridizations between adjacent molecules are negligible.

van der Waals Interaction Activated Strong Electronic Coupling at the Interface between Chloro Boron-Subphthalocyanine and Cu(111).

In this article, we investigate the interface between shuttlecock-shaped chloro boron-subphthalocyanine molecules and the Cu(111) surface. We highlight how molecular planarization induced by van der Waals forces can fundamentally alter the interface properties and how it can enable a particularly strong hybridization between molecular and metal states. In our simulations, we start from a situation in which we disregard van der Waals forces and then introduce them gradually by rescaling the interaction parameter, thereby "pulling" the molecule toward the surface. This reveals two adsorption regimes with significantly different adsorption distances, molecular conformations, and adsorbate-induced changes of the work function. Notably, the above-mentioned massive hybridization of electronic states, also observed in photoelectron spectroscopy, is obtained solely for one of the regimes. We show that this regime is accessible only as a consequence of the planarization of the molecular backbone resulting from the van der Waals attraction between the molecule and the surface. The results of this study indicate that for certain metal-molecule combinations unusually strong interfacial electronic interactions can be triggered by van der Waals forces creating a situation that differs from the usually described cases of physisorptive and chemisorptive interactions.

Anisotropic attosecond charge carrier dynamics and layer decoupling in quasi-2D layered SnS2.

Strong quantum confinement effects lead to striking new physics in two-dimensional materials such as graphene or transition metal dichalcogenides. While spectroscopic fingerprints of such quantum confinement have been demonstrated widely, the consequences for carrier dynamics are at present less clear, particularly on ultrafast timescales. This is important for tailoring, probing, and understanding spin and electron dynamics in layered and two-dimensional materials even in cases where the desired bandgap engineering has been achieved. Here we show by means of core-hole clock spectroscopy that SnS2 exhibits spin-dependent attosecond charge delocalization times (τ deloc) for carriers confined within a layer, τ deloc < 400 as, whereas interlayer charge delocalization is dynamically quenched in excess of a factor of 10, τ deloc > 2.7 fs. These layer decoupling dynamics are a direct consequence of strongly anisotropic screening established within attoseconds, and demonstrate that important two-dimensional characteristics are also present in bulk crystals of van der Waals-layered materials, at least on ultrafast timescales.

Ensemble Control of Kondo Screening in Molecular Adsorbates.

Switching the magnetic properties of organic semiconductors on a metal surface has thus far largely been limited to molecule-by-molecule tip-induced transformations in scanned probe experiments. Here we demonstrate with molecular resolution that collective control of activated Kondo screening can be achieved in thin-films of the organic semiconductor titanyl phthalocyanine on Cu(110) to obtain tunable concentrations of Kondo impurities. Using low-temperature scanning tunneling microscopy and spectroscopy, we show that a thermally activated molecular distortion dramatically shifts surface-molecule coupling and enables ensemble-level control of Kondo screening in the interfacial spin system. This is accompanied by the formation of a temperature-dependent Abrikosov-Suhl-Kondo resonance in the local density of states of the activated molecules. This enables coverage-dependent control over activation to the Kondo screening state. Our study thus advances the versatility of molecular switching for Kondo physics and opens new avenues for scalable bottom-up tailoring of the electronic structure and magnetic texture of organic semiconductor interfaces at the nanoscale.

Fast sensitive amplifier for two-probe conductance measurements in single molecule break junctions.

We demonstrate an amplifier based on the Wheatstone bridge designed specifically for use in single molecule break junctions. This amplifier exhibits superior performance due to its large bandwidth, flat frequency response, and high sensitivity. The amplifier is capable of measuring conductance values from 102 to 10-6G0 (G0 = 2e2/h), while maintaining a bandwidth in excess of 20 kHz, and shows remarkable resolution in the molecular conductance regime of 10-2 to 10-5 G0.

Sticking with the Pointy End? Molecular Configuration of Chloro Boron-Subphthalocyanine on Cu(111).

In this combined low-temperature scanning tunneling microscopy (STM) and density functional theory (DFT) study, we investigate self-assembly of the dipolar nonplanar organic semiconductor chloro boron-subphthalocyanine (ClB-SubPc) on Cu(111). We observe multiple distinct adsorption configurations and demonstrate that these can only be understood by taking surface-catalyzed dechlorination into account. A detailed investigation of possible adsorption configurations and the comparison of experimental and computational STM images demonstrates that the configurations correspond to "Cl-up" molecules with the B-Cl moiety pointing toward the vacuum side of the interface, and dechlorinated molecules. In contrast to the standard interpretation of adsorption of nonplanar molecules in the phthalocyanine family, we find no evidence for "Cl-down" molecules where the B-Cl moiety would be pointing toward the Cu surface. We show computationally that such a configuration is unstable and thus is highly unlikely to occur for ClB-SubPc on Cu(111). Using these assignments, we discuss the different self-assembly motifs in the submonolayer coverage regime. The combination of DFT and STM is essential to gain a full atomistic understanding of the surface-molecule interactions, and our findings imply that phthalocyanines may undergo surface-catalyzed reactions hitherto not considered. Our results also indicate that care has to be taken when analyzing possible adsorption configurations of polar members of the phthalocyanine family, especially when they are adsorbed on comparably reactive surfaces like Cu(111).

Spectroscopy and control of near-surface defects in conductive thin film ZnO.

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

Hybridization-Induced Carrier Localization at the C60 /ZnO Interface.

Electronic coupling and ground-state charge transfer at the C60 /ZnO hybrid interface is shown to localize carriers in the C60 phase. This effect, revealed by resonant X-ray photoemission, arises from interfacial hybridization between C60 and ZnO. Such localization at carrier-selective electrodes and interlayers may lead to severely reduced carrier harvesting efficiencies and increased recombination rates in organic electronic devices.

Controlling the Spin Texture of Topological Insulators by Rational Design of Organic Molecules.

We present a rational design approach to customize the spin texture of surface states of a topological insulator. This approach relies on the extreme multifunctionality of organic molecules that are used to functionalize the surface of the prototypical topological insulator (TI) Bi2Se3. For the rational design we use theoretical calculations to guide the choice and chemical synthesis of appropriate molecules that customize the spin texture of Bi2Se3. The theoretical predictions are then verified in angular-resolved photoemission experiments. We show that, by tuning the strength of molecule-TI interaction, the surface of the TI can be passivated, the Dirac point can energetically be shifted at will, and Rashba-split quantum-well interface states can be created. These tailored interface properties-passivation, spin-texture tuning, and creation of hybrid interface states-lay a solid foundation for interface-assisted molecular spintronics in spin-textured materials.

Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface.

Despite significant interest in hybrid organic/inorganic semiconductor interfaces, little is known regarding the fate of charge carriers at metal oxide interfaces, particularly on ultrafast time scales. Using core-hole clock spectroscopy, we investigate the ultrafast charge carrier dynamics of conductive ZnO films at a hybrid interface with an organic semiconductor. The adsorption of C60 on the ZnO surface strongly suppresses the ultrafast carrier delocalization and increases the charge carrier residence time from 400 attoseconds to nearly 30 fs. Here, we show that a new hybridized interfacial density of states with substantial molecular character is formed, fundamentally altering the observed carrier dynamics. The remarkable change in the dynamics sheds light on the fate of carriers at hybrid organic/inorganic semiconductor interfaces relevant to organic optoelectronics and provides for the first time an atomistic picture of the electronically perturbed near-interface region of a metal oxide.

Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics.

Layered metal dichalcogenides have attracted significant interest as a family of single- and few-layer materials that show new physics and are of interest for device applications. Here, we report a comprehensive characterization of the properties of tin disulfide (SnS2), an emerging semiconducting metal dichalcogenide, down to the monolayer limit. Using flakes exfoliated from layered bulk crystals, we establish the characteristics of single- and few-layer SnS2 in optical and atomic force microscopy, Raman spectroscopy and transmission electron microscopy. Band structure measurements in conjunction with ab initio calculations and photoluminescence spectroscopy show that SnS2 is an indirect bandgap semiconductor over the entire thickness range from bulk to single-layer. Field effect transport in SnS2 supported by SiO2/Si suggests predominant scattering by centers at the support interface. Ultrathin transistors show on-off current ratios >10(6), as well as carrier mobilities up to 230 cm(2)/(V s), minimal hysteresis, and near-ideal subthreshold swing for devices screened by a high-k (deionized water) top gate. SnS2 transistors are efficient photodetectors but, similar to other metal dichalcogenides, show a relatively slow response to pulsed irradiation, likely due to adsorbate-induced long-lived extrinsic trap states.

Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction.

The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.

Understanding Interfacial Electronic Structure and Charge Transfer: An Electrostatic Perspective.

The challenge of understanding electronic structure and dynamics at organic semiconductor interfaces arises from the richness and importance of weak interactions in thin films of extended π-conjugated molecules. In this Perspective, I discuss a conceptually simple electrostatic approach toward a molecular-level description of the electronic structure and dynamics at a subset of such interfaces. Self-assembled monolayers of oriented dipolar molecules physisorbed on metal surfaces generate sizable collective electric fields, and electrostatics determines the key factors for energy level alignment and molecular electronic structure. A rigorous quantum mechanical treatment of such interfaces supports this conclusion and sheds light on the subtle interplay of the different interfacial interactions. The electrostatic model of the interface has the potential to offer also insights into the role of strong collective electric fields on interfacial charge-transfer dynamics.

Resonance and localization effects at a dipolar organic semiconductor interface.

The image state manifold of the dipolar organic semiconductor vanadyl naphthalocyanine (VONc) on highly oriented pyrolytic graphite is investigated by angle-resolved two-photon photoemission (AR-TPPE) spectroscopy in the 0-1 monolayer regimes. Interfacial charge-transfer from the image potential state of clean graphite populates a near-resonant VONc anion level, identifiable by the graphite image potential state by its distinct momentum dispersion obtained from AR-TPPE. This affinity level is subject to depolarization by the neighboring molecules, resulting in stabilization of this state with coverage. Near a coverage of one monolayer, a hybrid image potential/anion state is also formed, showing progressive localization with coverage. Intensities for all these features develop rather differently with molecular coverage, pointing towards the different types of charge-transfer interactions at play at this interface.

Magnetic self-assembly of gold nanoparticle chains using dipolar core-shell colloids.

The preparation of gold nanoparticle (AuNP) assemblies was conducted by the synthesis and dipolar assembly of ferromagnetic core-shell nanoparticles composed of AuNP cores and cobalt NP shells. Dissolution of metallic Co phases with mineral acids afforded self-assembled AuNP chains and bracelets.

Image states at the interface with a dipolar organic semiconductor.

Image states of the dipolar organic semiconductor vanadyl naphthalocyanine on highly oriented pyrolytic graphite are investigated in the submonolayer to few monolayer regime. The presence of a significant molecular dipole in the organized thin films leads to a strong modification of the image states with coverage. In the 0-1 ML regime, we observe successive stabilization of the image state with increasing coverage. Above 1 ML, a new image state develops, corresponding to the screened interaction at the organic semiconductor/substrate interface. We show that the evolution of the observed image states can be understood on the basis of resonance-enhanced anion formation in the presence of strong electric fields. These data represent a step toward understanding the influence of electrostatic fields on electronic structure at organic semiconductor interfaces.