Stretchable OLEDs based on a hidden active area for high fill factor and resolution compensation.

Stretchable organic light-emitting diodes (OLEDs) have emerged as promising optoelectronic devices with exceptional degree of freedom in form factors. However, stretching OLEDs often results in a reduction in the geometrical fill factor (FF), that is the ratio of an active area to the total area, thereby limiting their potential for a broad range of applications. To overcome these challenges, we propose a three-dimensional (3D) architecture adopting a hidden active area that serves a dual role as both an emitting area and an interconnector. For this purpose, an ultrathin OLED is first attached to a 3D rigid island array structure through quadaxial stretching for precise, deformation-free alignment. A portion of the ultrathin OLED is concealed by letting it 'fold in' between the adjacent islands in the initial, non-stretched condition and gradually surfaces to the top upon stretching. This design enables the proposed stretchable OLEDs to exhibit a relatively high FF not only in the initial state but also after substantial deformation corresponding to a 30% biaxial system strain. Moreover, passive-matrix OLED displays that utilize this architecture are shown to be configurable for compensation of post-stretch resolution loss, demonstrating the efficacy of the proposed approach in realizing the full potential of stretchable OLEDs.

Organic Phototransistor with Light-Induced Contact Modulation and Sensitivity Enhancement Using a C60/C70:TAPC Hybrid Channel.

Organic phototransistors (OPTs) are attracting a significant degree of interest as devices that have the potential to play multiple roles, including light sensing, signal amplification, and switching for addressing when they are used for matrix arrays. However, it has been challenging to realize OPTs that can perform all of these roles simultaneously at a sufficient performance level because the channel materials with high carrier mobility often exhibit relatively low photoabsorption. In this work, we propose OPTs with a hybrid bilayer channel consisting of a neat C60 layer and a bulk-heterojunction layer of C70 and 1,1-bis(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC) as a possible solution to this issue. While the C60 layer serves as the main carrier-transporting layer with high mobility, the C70:TAPC layer operates as a photoactive layer wherein the photogenerated carriers provide photoinduced contact modulation that leads to a significant enhancement in photosensitivity. With the optimal design maximizing the absorption, the proposed hybrid-channel OPTs show a responsivity of ca. 180 A/W, which is 4.5 times higher than that of the control OPT with a C70:TAPC single channel. The operation mechanism and the origin for the improvement are verified by an in-depth analysis of the photoinduced modulation of the channel and contact resistances of the OPTs.

Tunable 1D and 2D Polyacrylonitrile Nanosheet Superstructures.

Carbon superstructures are widely applied in energy and environment-related areas. Among them, the flower-like polyacrylonitrile (PAN)-derived carbon materials have shown great promise due to their high surface area, large pore volume, and improved mass transport. In this work, we report a versatile and straightforward method for synthesizing one-dimensional (1D) nanostructured fibers and two-dimensional (2D) nanostructured thin films based on flower-like PAN chemistry by taking advantage of the nucleation and growth behavior of PAN. The resulting nanofibers and thin films exhibited distinct morphologies with intersecting PAN nanosheets, which formed through rapid nucleation on existing PAN. We further constructed a variety of hierarchical PAN superstructures based on different templates, solvents, and concentrations. These PAN nanosheet superstructures can be readily converted to carbon superstructures. As a demonstration, the nanostructured thin film exhibited a contact angle of ∼180° after surface modification with fluoroalkyl monolayers, which is attributed to high surface roughness enabled by the nanosheet assemblies. This study offers a strategy for the synthesis of nanostructured carbon materials for various applications.

The effect of proto-type wearable light-emitting devices on serum 25-hydroxyvitamin D levels in healthy adults: a 4-week randomized controlled trial.

BACKGROUND: Many people in modern society have insufficient exposure to ultraviolet B (UVB) sunlight, which may lead to vitamin D deficiency. We aimed to investigate the effect of a proto-type wearable light-emitting diode (LED) device emitting UVB light on serum 25-hydroxyvitamin D levels. METHODS: A total of 136 healthy adults were randomly assigned to receive either an active device emitting UVB light with a peak wavelength of 285 nm (n = 64) or a sham device emitting visible light (n = 72). All participants wore the device for a total of two minutes, one minute on each forearm, every day for 4 weeks. Serum 25-hydroxyvitamin D levels were assessed at baseline, 2, and 4 weeks of intervention, and 2 weeks after the end of the intervention. RESULTS: A significant difference was found between the experimental and control groups in changes in serum 25-hydroxyvitamin D levels from baseline after two (0.25 ± 3.10 ng/mL vs. -1.07 ± 2.68 ng/mL, p = 0.009) and 4 weeks of intervention (0.75 ± 3.98 ng/mL vs. -1.75 ± 3.04 ng/mL, p < 0.001). In the experimental group, the dropout rate due to mild, self-limiting adverse skin reactions was 11.8% (9/76). The mean total 25-hydroxyvitamin D production after UVB exposure was estimated at 0.031 ng/mL per 1 cm2 of skin area. CONCLUSIONS: A prototype wearable LED UVB device was effective for improving 25-hydroxyvitamin D status. The development of a safer wearable LED device for phototherapy may provide a novel daily, at-home option for vitamin D supplementation.

Multifunctional materials for implantable and wearable photonic healthcare devices.

Numerous light-based diagnostic and therapeutic devices are routinely used in the clinic. These devices have a familiar look as items plugged in the wall or placed at patients' bedsides, but recently, many new ideas have been proposed for the realization of implantable or wearable functional devices. Many advances are being fuelled by the development of multifunctional materials for photonic healthcare devices. However, the finite depth of light penetration in the body is still a serious constraint for their clinical applications. In this Review, we discuss the basic concepts and some examples of state-of-the-art implantable and wearable photonic healthcare devices for diagnostic and therapeutic applications. First, we describe emerging multifunctional materials critical to the advent of next-generation implantable and wearable photonic healthcare devices and discuss the path for their clinical translation. Then, we examine implantable photonic healthcare devices in terms of their properties and diagnostic and therapeutic functions. We next describe exemplary cases of noninvasive, wearable photonic healthcare devices across different anatomical applications. Finally, we discuss the future research directions for the field, in particular regarding mobile healthcare and personalized medicine.

Poly(amide-imide) materials for transparent and flexible displays.

The key component currently missing for the next generation of transparent and flexible displays is a high-performance polymer material that is flexible, while showing optical and thermal properties of glass. It must be transparent to visible light and show a low coefficient of thermal expansion (CTE). While specialty plastics such as aromatic polyimides are promising, reducing their CTE and improving transparency simultaneously proved challenging, with increasing coloration the main problem to be resolved. We report a new poly(amide-imide) material that is flexible and displays glass-like behavior with a CTE value of 4 parts per million/°C. This novel polymer was successfully used as a substrate to fabricate transparent and flexible indium-gallium-zinc oxide thin-film transistors.

Spontaneous Additive Nanopatterning from Solution Route Using Selective Wetting.

Nanopatterns of functional materials have successfully led innovations in a wide range of fields, but further exploration of their full potential has often been limited because of complex and cost-inefficient patterning processes. We here propose an additive nanopatterning process of functional materials from solution route using selective wetting phenomenon. The proposed process can produce nanopatterns as narrow as 150 nm with high yield over large area at ultrahigh process speed, that is, the speed of solution dragging, of up to ca. 4.6 m·min-1. The process is highly versatile that it can utilize a wide range of solution materials, control vertical structures including pattern thickness and multistacks, and produce nanopatterns on various substrates with emerging form factors such as foldability and disposability. The solution patterning in nanoscale by selective wetting is enabled by corresponding surface energy patterns in high contrast that are achieved by one-step imprinting onto hydrophobic/hydrophilic bilayers. The mechanisms and control parameters for the solution patterning are revealed by fluid-dynamic simulation. With the aforementioned advantages, we demonstrate 25 400 pixel-per-inch light-emitting pixel arrays and a plasmonic color filter of 10 cm × 10 cm area on a plastic substrate as potential applications.

Organic flash memory on various flexible substrates for foldable and disposable electronics.

With the emergence of wearable or disposable electronics, there grows a demand for a flash memory realizable on various flexible substrates. Nevertheless, it has been challenging to develop a flash memory that simultaneously exhibits a significant level of flexibility and performance. This is mainly due to the scarcity of flexible dielectric materials with insulating properties sufficient for a flash memory, which involves dual dielectric layers, respectively, responsible for tunneling and blocking of charges. Here we report ultra-flexible organic flash memories based on polymer dielectrics prepared by initiated chemical vapor deposition. Using their near-ideal dielectric characteristics, we demonstrate flash memories bendable down to a radius of 300 µm that exhibits a relatively long-projected retention with a programming voltage on par with the present industrial standards. The proposed memory technology is then applied to non-conventional substrates, such as papers, to demonstrate its feasibility in a wide range of applications.Flexible flash memory is crucial to modern electronics, but its fabrication is challenging in the absence of suitable dielectric materials. Here, Lee et al. realize organic memory with retention over 10 years using tunneling and blocking dielectric layers prepared by initiated chemical vapor deposition.

Efficient organic photomemory with photography-ready programming speed.

We propose a device architecture for a transistor-type organic photomemory that can be programmed fast enough for use in electrical photography. Following the strategies used in a flash memory where an isolated charge storage node or floating gate is employed, the proposed organic photomemory adopts an isolated photo-absorption zone that is embedded between upper and lower insulator layers without directly interfacing with a semiconductor channel layer. This isolated photo-absorption zone then allows the device to operate in electrically 'on' state, in which the high electric-field region can have a maximal spatial overlap with the illuminated area for efficient and facile light-programming. With the proposed approach, a significant threshold voltage shift is attained even with the exposure time as short as 5 ms. High quality dielectric layers prepared by initiated chemical vapor deposition ensure erasing to occur only with electrical signal in a controlled manner. Retention time up to 700 s is demonstrated.

Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

Towards colorless transparent organic transistors: potential of benzothieno[3,2-b]benzothiophene-based wide-gap semiconductors.

Colorless, highly transparent organic thin-film transistors (TOTFTs) with high performance are realized based on benzothieno[3,2-b]benzothiophene (BTBT) derivatives that simultaneously exhibit a wide energy gap and high transport properties. Multilayer transparent source/drain electrodes maintain the transparency, and ultrathin fluoropolymer dielectric layers enable stable, low-voltage operation of the proposed TOTFTs.

Complementary p- and n-type polymer doping for ambient stable graphene inverter.

Graphene offers great promise to complement the inherent limitations of silicon electronics. To date, considerable research efforts have been devoted to complementary p- and n-type doping of graphene as a fundamental requirement for graphene-based electronics. Unfortunately, previous efforts suffer from undesired defect formation, poor controllability of doping level, and subtle environmental sensitivity. Here we present that graphene can be complementary p- and n-doped by simple polymer coating with different dipolar characteristics. Significantly, spontaneous vertical ordering of dipolar pyridine side groups of poly(4-vinylpyridine) at graphene surface can stabilize n-type doping at room-temperature ambient condition. The dipole field also enhances and balances the charge mobility by screening the impurity charge effect from the bottom substrate. We successfully demonstrate ambient stable inverters by integrating p- and n-type graphene transistors, which demonstrated clear voltage inversion with a gain of 0.17 at a 3.3 V input voltage. This straightforward polymer doping offers diverse opportunities for graphene-based electronics, including logic circuits, particularly in mechanically flexible form.

Digital-mode organic vapor-jet printing (D-OVJP): advanced jet-on-demand control of organic thin-film deposition.

Digital-mode organic vapor-jet printing (D-OVJP) is demonstrated by producing a series of organic vapor jets. D-OVJP not only inherits all the benefits of a conventional OVJP but also provides an advanced, straightforward control over organic deposition with a pixel-to-pixel precision. Digitally-controlled film thickness and high-performance thin-film transistors are demonstrated with D-OVJP, proving its potential applicability to organic electronics and related areas.

Nanogap electrode fabrication for a nanoscale device by volume-expanding electrochemical synthesis.

A novel nanogap fabrication method using an electrochemical nanopatterning technique is presented. Electrochemical deposition of platinum ions reduces the microgap size to the sub-50-nm range due to the self-limited volume expansion of the electrodes. Additionally, the low crystallinity of platinum reduces the line edge roughness in the electrodes, whereas the high crystallinity of gold increases it. Current compliance, a buffered resistor, and a symmetric deposition strategy are used to achieve high reliability and practicality of nanogap electrodes. As a possible application, an organic thin-film transistor using the nanogap electrodes is also demonstrated.

Towards gigahertz operation: ultrafast low turn-on organic diodes and rectifiers based on C60 and tungsten oxide.

Ultrafast organic diodes with low turn-on voltage based on a junction between C60 and WO3 are proposed. The high electron mobility of C60 layers and the optimal work function of hexamethyldisilazane (HMDS)-treated WO3 layers together provide ideal diode characteristics including high rectification ratio and low turn-on voltage. Ultrahigh frequency (UHF) compatible rectifiers with a low voltage drop are demonstrated with the C60/WO3 diodes.