Effect of Pelvic Movement on Healthy Subjects During Gait Training Using a Gait Rehabilitation System.

Rapidly aging society faces with increases in neurological disorders including stroke. Hemiplegia, which is one of the common sequelae due to stroke, causes difficulties in activities of daily living. As the number of stroke patients grows, demands for gait training increases, where robotic gait training systems are necessary. A robotic gait training system, called "COWALK-I," is designed to provide pelvic motion on the transverse plane as well as leg motions in the sagittal plane during gait training sessions. The pelvic motion allows weight-shifting as well as more natural gait patterns during gait training. In this research, effect of the pelvic motion during waking in the COWALK-I system is studied. Interaction force between the healthy subjects and the COWALK-I and electromyography(EMG) sensor data are measured. The average interaction forces did not show significant difference while each subject exhibited diverse patterns. The EMG signals shows that more activation of rectus femoris and less activation of gastrocnemius and gluteus medius.

Liquid-crystalline semiconducting copolymers with intramolecular donor-acceptor building blocks for high-stability polymer transistors.

The ability to control the molecular organization of electronically active liquid-crystalline polymer semiconductors on surfaces provides opportunities to develop easy-to-process yet highly ordered supramolecular systems and, in particular, to optimize their electrical and environmental reliability in applications in the field of large-area printed electronics and photovoltaics. Understanding the relationship between liquid-crystalline nanostructure and electrical stability on appropriate molecular surfaces is the key to enhancing the performance of organic field-effect transistors (OFETs) to a degree comparable to that of amorphous silicon (a-Si). Here, we report a novel donor-acceptor type liquid-crystalline semiconducting copolymer, poly(didodecylquaterthiophene-alt-didodecylbithiazole), which contains both electron-donating quaterthiophene and electron-accepting 5,5'-bithiazole units. This copolymer exhibits excellent electrical characteristics such as field-effect mobilities as high as 0.33 cm(2)/V.s and good bias-stress stability comparable to that of amorphous silicon (a-Si). Liquid-crystalline thin films with structural anisotropy form spontaneously through self-organization of individual polymer chains as a result of intermolecular interactions in the liquid-crystalline mesophase. These thin films adopt preferential well-ordered intermolecular pi-pi stacking parallel to the substrate surface. This bottom-up assembly of the liquid-crystalline semiconducting copolymer enables facile fabrication of highly ordered channel layers with remarkable electrical stability.

Side chain disorder and phase transitions in alkyl-substituted, conjugated oligomers. Relation to side-chain melting in P3ATs.

Certain 4,4'-alkyl substituted 2,2'-bithiazole and bithiazole-thiophene oligomers display an endothermic transition in their DSC trace below their respective melting points. Variable-temperature FTIR, MAS-1H NMR, UV-vis spectra, and XRD all indicate that the thermal transition is due to a crystal-crystal phase transition that we have labeled alpha --> beta. FTIR shows a stepwise increase in the concentration of gauche defects at the alpha --> beta transition temperature, but MAS NMR spectra show little increase in the side chain motion until the mp is reached. UV-vis spectra demonstrate that the conjugated main chains remain essentially planar through the alpha --> beta transition, and significant deviations from planarity occur only at higher temperatures, but well below the mp. The close similarity of this behavior to the phase transitions in long chain n-paraffins and the "side-chain melting" phenomenon in poly(3-alkylthiophenes), P3ATs, suggests that the latter may actually be more accurately described as a crystal-crystal phase transition of the crystalline fraction, driven by side chain disorder.

Patterning organic semiconductors using "dry" poly(dimethylsiloxane) elastomeric stamps for thin film transistors.

This communication demonstrates a method of transferring unreacted low molecular weight (LMW) siloxane oligomers from freshly prepared "dry" PDMS stamps for patterning organic semiconductors and conducting polymers into functional devices via selective wetting. The semiconductors were patterned onto the modified surfaces via dip-coating with well-resolved feature sizes as small as 1 mum. Functional transistor arrays exhibited field-effect mobilities as high as 0.07 cm2/Vs. The proposed printing method eliminates the need to ink SAMs for fabricating patterns and results in a simple, fast, and highly reproducible method of patterning organic semiconductors from solution. The method herein also produced a flexible transistor composed of patterned PEDOT source-drain electrodes.

Patterned growth of large oriented organic semiconductor single crystals on self-assembled monolayer templates.

This work demonstrates a method for inducing site-specific nucleation and subsequent growth of large oriented organic semiconductor single crystals using micropatterned self-assembled monolayers (SAMs). We demonstrate growth of oriented, patterned, and large organic semiconductor single crystals for potential use in organic electronic devices. The control over multiple parameters in a single system has not yet been reported. The ability to control various aspects of crystal growth in one system provides a powerful technique for the bottom-up fabrication of organic single-crystal semiconductor devices.

Synthesis, crystal structure, and transistor performance of tetracene derivatives.

The substitution of chloro or bromo groups in tetracene gives rise to the change of crystal structure, having a substantial effect on carrier transport. Halogenated tetracene derivatives were synthesized and grown into single crystals. Monosubstituted 5-bromo- and 5-chlorotetracenes have the herringbone-type structure, while 5,11-dichlorotetracene has the slipped pi stacking structure. Mobility of 5,11-dichlorotetracene was measured to be as high as 1.6 cm2/V.s in single-crystal transistors. The pi stacking structure, which enhances pi orbital overlap and facilitates carrier transport, may thus be responsible for this high mobility.