ABSTRACT
Wire bonding, one of the methods for electrically connecting a semiconductor chip with a substrate, involves attaching thin metal wires to pads. It is the oldest electrical connection method that exhibits high compatibility with other processes. The metal wires used for electrical connection in wire bonding are mainly made of Au, Cu, and Ag. After the wire bonding, molding is performed using the epoxy molding compound (EMC). However, EMC inevitably contains ions such as halogen elements. In addition, it absorbs moisture due to its hydrophilicity, creating a corrosive environment with electrolytes. In this study, we evaluated the influence of hydrochloric acid concentration on corrosion behavior between Au or Cu bonding wires and sputtered Al bond pads. The electrochemical factors such as corrosion potential difference (ΔE), galvanic corrosion current density (ig), and anodic and cathodic Tafel slopes were found to influence galvanic corrosion behavior. Galvanic corrosion tendency in first bond and second bond areas of PCB unit specimen was confirmed.
ABSTRACT
The phase change due to varying content of titanium in Si-Ni-xTi alloys and its effect on the electrochemical behavior has been investigated. Specimens were prepared by melt-spinning to reduce the microstructure scale. Results showed that silicon particles of 50-100 nm diameter and dendrites of somewhat larger scale were formed in the Si-Ni-Ti alloys ribbons. The microstructure of Si70Ni15Ti15 alloy ribbons was composed of silicon particles finely dispersed in Si7Ni4Ti4 phase. The cycle performance was improved by the formation of TiSi2 or NiSi2 phase at the presence of Si7Ni4Ti4 phase, either of which combined with Si7Ni4Ti4 phase effectively accommodated the volume change of silicon particles during cycling. The reduced scale of silicon particles contributed to the enhanced cycle efficiency as well.
Subject(s)
Electrodes , Metal Nanoparticles/chemistry , Metal Nanoparticles/ultrastructure , Nickel/chemistry , Silicon/chemistry , Titanium/chemistry , Alloys/chemistry , Electric Conductivity , Equipment Design , Equipment Failure Analysis , Macromolecular Substances/chemistry , Materials Testing , Molecular Conformation , Particle Size , Surface PropertiesABSTRACT
The rapidly solidified Si-xTiNi (x = 0.2-0.45) alloy ribbons were fabricated via melt spinning process. The thickness of the melt-spun ribbons was about 12.5 microm, and the sound section was selected for the experiment. The microstructures of the ribbons were analyzed using XRD, FE-SEM, and HR-TEM: The primary silicon particles of 30 nm-100 n min diameter were finely dispersed in the inactive buffering matrix of Si7Ni4Ti4 phase. The charge/discharge energy capacity and electrochemical properties were significantly influenced by the relative ratio of NiTi to silicon. With increasing the total amount of Ni and Ti content up to 45 at%, the amount of Si7Ni4Ti4 phase increased and the cycle performance was improved. The Si7Ni4Ti4 phase acted as a buffer for the volume expansion/contraction of Si occurring during the alloying and dealloying, and it could prevent a significant deterioration in cycle performance of the battery.
Subject(s)
Electric Power Supplies , Lithium/chemistry , Nanostructures/chemistry , Nanostructures/ultrastructure , Nickel/chemistry , Silicon/chemistry , Titanium/chemistry , Electric Conductivity , Equipment Design , Equipment Failure Analysis , Materials Testing , Particle SizeABSTRACT
This paper presents the microstructures and electrochemical properties of Si-Ti-Ni alloys of various compositions prepared by a rapid solidification process. Si-15Ti-(0-25 at%)Ni alloy ingots prepared by arc-melting was melt-spun to produce thin strip of -15 Om thickness. The Si-Ni-Ti alloy electrode were fabricated by mixing the active powdered materials (88 wt%) with ketjen black (4 wt%) as a conductive material and polyamide-imide binder (PAI, 8 wt.%) dissolved in N-methyl-2-pyrrolidinone (NMP). Results showed that the microstructures of melt-spun Si-Ti-Ni ribbons consist of silicon, TiSi2, Si7Ni4Ti4, and NiSi2 phases depending on the composition. As the content of nickel increased in silicon matrix, TiSi2 phase disappeared while Si7Ni4Ti4 and NiSi2 phases are generated. The cycle efficiency of Si65Ti15Ni20 and Si60Ti15Ni25 alloys was significantly improved because of the increased volume fraction of Si7Ni4Ti4 and NiSi2 phases and fine particulated silicon phase.
Subject(s)
Electric Power Supplies , Electrodes , Lithium/chemistry , Metal Nanoparticles/chemistry , Metal Nanoparticles/ultrastructure , Alloys/chemistry , Electric Conductivity , Equipment Design , Equipment Failure Analysis , Materials Testing , Particle SizeABSTRACT
To qualify interconnect technologies such as microelectronic fine wire bonds for mass production of integrated circuit (IC) packages, it is necessary to perform accelerated aging tests, e.g., to age a device at an elevated temperature or to subject the device to thermal cycling and measure the decrease of interconnect quality. There are downsides to using conventional ovens for this as they are relatively large and have relatively slow temperature change rates, and if electrical connections are required between monitoring equipment and the device being heated, they must be located inside the oven and may be aged by the high temperatures. Addressing these downsides, a miniaturized heating system (minioven) is presented, which can heat individual IC packages containing the interconnects to be tested. The core of this system is a piece of copper cut from a square shaped tube with high resistance heating wire looped around it. Ceramic dual in-line packages are clamped against either open end of the core. One package contains a Pt100 temperature sensor and the other package contains the device to be aged placed in symmetry to the temperature sensor. According to the temperature detected by the Pt100, a proportional-integral-derivative controller adjusts the power supplied to the heating wire. The system maintains a dynamic temperature balance with the core hot and the two symmetric sides with electrical connections to the device under test at a cooler temperature. Only the face of the package containing the device is heated, while the socket holding it remains below 75 degrees C when the oven operates at 200 degrees C. The minioven can heat packages from room temperature up to 200 degrees C in less than 5 min and maintain this temperature at 28 W power. During long term aging, a temperature of 200 degrees C was maintained for 1120 h with negligible resistance change of the heating wires after 900 h (heating wire resistance increased 0.2% over the final 220 h). The device is also subjected to 5700 thermal cycles between 55 and 195 degrees C, demonstrating reliability under thermal cycling.
