Erratum: Flores, J., et al. Effective Parameters for 1D Photonic Crystals with Isotropic and Anisotropic Magnetic Inclusions: Coherent Wave Homogenization Theory. Materials 2020, 13, 1475.

The authors wish to make the following corrections to this paper [1]: replace: (37) 1 ε z = f ε m = 1 - f ε d and (39) 1 µ z = f µ m = 1 - f µ d with the correct expressions: (37) 1 ε z = f ε m + 1 - f ε d and (39) 1 µ z = f µ m + 1 - f µ d [...].

Effective Parameters for 1D Photonic Crystals with Isotropic and Anisotropic Magnetic Inclusions: Coherent Wave Homogenization Theory.

A homogenization theory that can go beyond the regime of long wavelengths is proposed, namely, a theory that is still valid for vectors of waves near the edge of the first zone of Brillouin. In this paper, we consider that the displacement vector and the magnetic induction fields have averages in the volume of the cell associated with the values of the electric and magnetic fields in the edges of the cell, so they satisfy Maxwell's equations. Applying Fourier formalism, explicit expressions were obtained for the case of a photonic crystal with arbitrary periodicity. In the case of one-dimensional (1D) photonic crystals, the expressions for the tensor of the effective bianisotropic response (effective permittivity, permeability and crossed magneto-electric tensors) are remarkably simplified. Specifically, the effective permittivity and permeability tensors are calculated for the case of 1D photonic crystals with isotropic and anisotropic magnetic inclusions. Through a numerical calculation, the dependence of these effective tensors upon the filling fraction of the magnetic inclusion is shown and analyzed. Our results show good correspondence with the approach solution of Rytov's effective medium. The derived formulas can be very useful for the design of anisotropic systems with specific optical properties that exhibit metamaterial behavior.

Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO2 multilayers.

In this paper, we report on the enhanced control of resistive switching in multilayer Si/SiO2 structures, which permit the formation of Si nanocrystals with a typical size of 5.88 nm and overall good shape homogeneity. The deposition of a different number of Si and SiO2 bilayers (6, 8 and 10) allowed control of SET/RESET voltages in negative bias ranges 4.5-10 V and 6.3-13 V for six- and ten-bilayer devices, respectively. The corresponding resistance ratio between ON/OFF states varied in the ranges 107-105 for the aforementioned number of bilayers. Based on the result of XPS measurements, we suggest that the resistive switching in the studied system occurs due to the formation and annihilation of Si-Si and Si-O bonds, which serve as conductive pathways and isolating material, respectively.

Si-nanocrystal-based nanofluids for nanothermometry.

The measurement of local temperature in nanoscale volumes is becoming a technological frontier. Photoluminescent nanoparticles and nanocolloids are the natural choice for nanoscale temperature probes. However, the influence of a surrounding liquid on the cryogenic behavior of oxidized Si-nanocrystals (Si-NCs) has never been investigated. In this work, the photoluminescence (PL) of oxidized Si-NCs/alcohol based nanocolloids is measured as a function of the temperature and the molecule length of monohydric alcohols above their melting-freezing point. The results unveil a progressive blue shift on the emission peak which is dependent on the temperature as well as the dielectric properties of the surrounding liquid. Such an effect is analyzed in terms of thermal changes of the Si-NCs bandgap, quantum confinement and the polarization effects of the embedding medium; revealing an important role of the dielectric constant of the surrounding liquid. These results are relevant because they offer a general insight to the fundamental behavior of photoluminescent nanocolloids under a cooling process and moreover, enabling PL tuning based on the dielectric properties of the surrounding liquid. Hence, the variables required to engineer PL of nanofluids are properly identified for use as temperature sensors at the nanoscale.

Effect of the structure on luminescent characteristics of SRO-based light emitting capacitors.

In this paper, we study the structural, optical and electro-optical properties of silicon rich oxide (SRO) films, with 6.2 (SRO30) and 7.3 at.% (SRO20) of silicon excess thermally annealed at different temperatures and used as an active layer in light emitting capacitors (LECs). A typical photoluminescence (PL) red-shift is observed as the silicon content and annealing temperature are increased. Nevertheless, when SRO30 films are used in LECs, a resistance switching (RS) behavior from a high current state (HCS) to a low conduction state (LCS) is observed, enhancing the intense blue electroluminescence (EL). This RS produces a long spectral blue-shift (∼227 nm) between the EL and PL band, and it is related to structural defects created by a high current flow through preferential conductive paths breaking off Si-Si bonds from very small silicon nanoparticles (Si-nps) (Eδ (Si ↑ Si ≡ Si) centers). LECs with SRO20 films do not present the RS behavior and only exhibit a slight shift between PL and EL, both in red spectra. The carrier transport in these LEC devices is analyzed as being trap assisted tunnelling and Poole-Frenkel through a quasi 'continuum' of defect traps and quantum dots for the conduction mechanism in SRO30 and SRO20 films, respectively. The results prove the feasibility of obtaining light emitting devices by using simple panel structures with Si-nps embedded in the dielectric layer.

EBV, HCMV, HHV6, and HHV7 screening in bone marrow samples from children with acute lymphoblastic leukemia.

Acute lymphoblastic leukemia (ALL) is the most common cancer in childhood worldwide and Mexico has reported one of the highest incidence rates. An infectious etiology has been suggested and supported by epidemiological evidences; however, the identity of the involved agent(s) is not known. We considered that early transmitted lymphotropic herpes viruses were good candidates, since transforming mechanisms have been described for them and some are already associated with human cancers. In this study we interrogated the direct role of EBV, HCMV, HHV6, and HHV7 human herpes viruses in childhood ALL. Viral genomes were screened in 70 bone marrow samples from ALL patients through standard and a more sensitive nested PCR. Positive samples were detected only by nested PCR indicating a low level of infection. Our result argues that viral genomes were not present in all leukemic cells, and, hence, infection most likely was not part of the initial genetic lesions leading to ALL. The high statistical power of the study suggested that these agents are not involved in the genesis of ALL in Mexican children. Additional analysis showed that detected infections or coinfections were not associated with prognosis.

Synthesis and characterization of PbSe nanoparticles obtained by a colloidal route using Extran as a surfactant at low temperature.

Lead selenide nanoparticles (PbSe NPs) have been obtained through an easy and low cost route using colloidal synthesis in aqueous solution. The synthesis was carried out at room temperature using Extran (Na5P3O10, NaOH and H2O) as surfactant. Hydrochloric acid (HCl) was used to eliminate the generated by-products. The size of PbSe NPs was varied by changing the Pb:Se molar concentration. The PbSe NPs were characterized by powder x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray analysis (EDAX), high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The XRD measurements showed that the PbSe NPs have the face-centered cubic phase structure. The crystal size was found to be between 14 and 20 nm as calculated from the XRD patterns and these values were corroborated with SEM and TEM. Additionally, HRTEM micrographs showed crystalline planes at (200), (220) and (111) of the PbSe NPs, in agreement with the XRD results.

DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films.

Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 degrees C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths--across the SRO film--has been proposed to explain the EL behaviour in these devices.

The mechanism of electrical annihilation of conductive paths and charge trapping in silicon-rich oxides.

The electrical properties of silicon-rich oxide (SRO) films in metal-oxide-semiconductor-like structures were analysed by current versus voltage (I-V) and capacitance versus voltage (C-V) techniques. SRO films were thermally annealed to activate the agglomeration of the silicon excess in the form of nanoparticles (Si-nps). High current was observed at low negative and positive voltages, and then at a certain voltage (V(drop)), the current dropped to a low conduction state until a high electric field again activated a high conduction state. C-V measurements demonstrated a capacitance reduction at the same time as the current dropped, but without appreciable flat-band voltage (V(FB)) shifting. The reduction in capacitance and current was also observed after applying an electrical stress. These effects are ascribed to the annihilation of conductive paths created by Si-nps. An equivalent circuit is used to explain the capacitance and current reductions. Finally, the conduction mechanism is also analysed by making use of trap assisted tunnelling and Fowler-Nordheim tunnelling at low and high electric fields, respectively.

Coulomb blockade effects in silicon nanoparticles embedded in thin silicon-rich oxide films.

Silicon nanoparticles (Si-nps) embedded in silicon oxide matrix were created using silicon-rich oxide (SRO) films deposited by low pressure chemical vapour deposition (LPCVD) followed by a thermal annealing at 1100 °C. The electrical properties were studied using metal-oxide-semiconductor (MOS) structures with the SRO films as the active layers. Capacitance versus voltage (C-V) exhibited downward and upward peaks in the accumulation region related to charge trapping and de-trapping effects of Si-nps, respectively. Current versus voltage (I-V) measurements showed fluctuations in the form of spike-like peaks and a clear staircase at room temperature. These effects have been related to the Coulomb blockade (CB) effect in the silicon nanoparticles embedded in SRO films. The observed quantum effects are due to 1 nm nanoparticles.

Consentimiento informado en Implantología Oral. Propuesta de documentos / Informed consent in Oral Implantology. Proposal of documents

La Implantología es una de las áreas de la Odontoestomatología más afectadas por los problemas legales derivados de la Ley Básica Reguladora de la Autonomía del Paciente y ello por varias razones: por ser una actividad claramente quirúrgica, por haber sido encuadrada dentro de la llamada “medicina satisfactiva” y por pertenecer casi exclusivamente a la práctica privada de la odontoestomatología. Tiene además la peculiaridad de que los procedimientos quirúrgicos y prostodóncicos están íntimamente relacionados, y es, en ocasiones, muy complejo deslindar la responsabilidad que corresponde a cada uno de estos actos. En el presente artículo nos centraremos en las repercusiones que sobre esta área de la odontoestomatología tiene la reciente Ley Básica Reguladora de la Autonomía del Paciente en lo que a la información y al consentimiento se refiere. También haremos una propuesta de documentos que, a nuestro juicio, cumplen con los requisitos señalados por la legislación actual (AU)

The Implantology is one of the areas of the Odontoestomatology more affected by the legal problems derived from the Regulating Basic Law of the Autonomy of the Patient, and it for several reasons: for being a clearly surgical activity, for being fitted within the call ‘satisfactive medicine’ and to belong almost exclusively to the private practice of the Odontoestomatology. It has in addition the peculiarity of which the surgical and prosthodontics procedures intimately are related, and is sometimes, very complex to define the responsibility of corresponds to each one of these acts. In the present article we will be centred in the repercussions that on this area of the Odontoestomatology the recent Regulating Basic Law of the Autonomy of the Patient has in which to the information and the consent it talks about. Also we will make a proposal of documents that, in our opinion, fulfill the requirements indicated by the present legislation (AU)