1.
Phys Rev B Condens Matter
; 50(24): 18124-18133, 1994 Dec 15.
Article
in English
| MEDLINE
| ID: mdl-9976244
2.
Configurational statistical model for the damaged structure of silicon oxide after ion implantation.
Phys Rev B Condens Matter
; 49(21): 14845-14849, 1994 Jun 01.
Article
in English
| MEDLINE
| ID: mdl-10010584
3.
Phys Rev B Condens Matter
; 46(16): 10453-10456, 1992 Oct 15.
Article
in English
| MEDLINE
| ID: mdl-10002891