High-performance and high-sensitivity applications of graphene transistors with self-assembled monolayers.

Charge impurities and polar molecules on the surface of dielectric substrates has long been a critical obstacle to using graphene for its niche applications that involve graphene's high mobility and high sensitivity nature. Self-assembled monolayers (SAMs) have been found to effectively reduce the impact of long-range scatterings induced by the external charges. Yet, demonstrations of scalable device applications using the SAMs technique remains missing due to the difficulties in the device fabrication arising from the strong surface tension of the modified dielectric environment. Here, we use patterned SAM arrays to build graphene electronic devices with transport channels confined on the modified areas. For high-mobility applications, both rigid and flexible radio-frequency graphene field-effect transistors (G-FETs) were demonstrated, with extrinsic cutoff frequency and maximum oscillation frequency enhanced by a factor of ~2 on SiO2/Si substrates. For high sensitivity applications, G-FETs were functionalized by monoclonal antibodies specific to cancer biomarker chondroitin sulfate proteoglycan 4, enabling its detection at a concentration of 0.01 fM, five orders of magnitude lower than that detectable by a conventional colorimetric assay. These devices can be very useful in the early diagnosis and monitoring of a malignant disease.

Gigahertz flexible graphene transistors for microwave integrated circuits.

Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz microwave integrated circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations.