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1.
Sensors (Basel) ; 22(10)2022 May 13.
Article in English | MEDLINE | ID: mdl-35632137

ABSTRACT

This paper studied the constraint mechanism for power device design based on perovskite quantum dots pumped by an electron beam. Combined with device designing, an experimental system of self-saturation luminescence and aging failure was designed for CsPbBr3 films. On this basis, we further completed the self-saturation luminescence and aging failure experiment and constructed a model of self-saturation luminescence and aging failure for CsPbBr3 device designing. Three constraints were proposed after analyzing and discussing the experimental data. Firstly, too high of a pumping current density makes it difficult to effectively promote the enhancement of luminescence efficiency. Secondly, radiation decomposition and aging failure of CsPbBr3 films are mainly related to the polarized degree of CsPbBr3 nanocrystals. Thirdly, by increasing the pumping electric field, the pumping energy can be effectively and widely delivered to the three-dimensional quantum dots film layer space, and there is a nonlinear relationship between the attenuation of the pumping energy density and the increment of the pumping electric field, which will effectively avoid the local high-energy density of instantaneous optical pumping.

2.
Front Optoelectron ; 13(3): 291-302, 2020 Sep.
Article in English | MEDLINE | ID: mdl-36641578

ABSTRACT

Although laser pumping using electroN beam (EB) has high transient power output and easy modulation based on perovskite quantum dot (PQD) film, its lasing emitting direction is the same as the pumped EB's direction. Thus, realizing the conventional direct device structure through the film lasing mechanism is extremely difficult. Therefore, using the random lasing principle, herein, we proposed a corona modulation device structure based on PQDs random laser pumped using an EB. We discussed and stimulated the optimized designed method of the device in terms of parameters of the electronic optical device and the utilization ratio of output power and its modulation extinction ratio, respectively. According to the simulation results, this type of device structure can effectively satisfy the new random lasing mechanism in terms of high-speed and high-power modulation.

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