ABSTRACT
This study reports first-principles predictions as well as experimental synthesis of manganese oxide nanoparticles under different conditions. The theoretical part of the work comprised density functional theory (DFT)-based calculations and first-principles molecular dynamics (MD) simulations. The extensive research efforts and the current challenges in enhancing the performance of the lithium-ion battery (LIB) provided motivation to explore the potential of these materials for use as an anode in the battery. The structural analysis of the synthesized samples carried out using X-ray diffraction (XRD) confirmed the tetragonal structure of Mn3O4 on heating at 450 and 550 °C and the cubic structure of Mn2O3 on heating at 650 °C. The structures are found in the form of nanoparticles at 450 and 550 °C, but at 650 °C, the material appeared in the form of a nanoporous structure. Further, we investigated the electrochemical functionality of Mn2O3 and Mn3O4 as anode materials for utilization in LIBs via MD simulations. Based on the investigations of their electrical, structural, diffusion, and storage behavior, the anodic character of Mn2O3 and Mn3O4 is predicted. The findings indicated that 10 lithium atoms adsorb on Mn2O3, whereas 5 lithium atoms adsorb on Mn3O4 when saturation is taken into account. The storage capacities of Mn2O3 and Mn3O4 are estimated to be 1697 and 585 mAh g-1, respectively. The maximum value of lithium insertion voltage per Li in Mn2O3 is 0.93 and 0.22 V in Mn3O4. Further, the diffusion coefficient values are found as 2.69 × 10-9 and 2.65 × 10-10 m2 s-1 for Mn2O3 and Mn3O4, respectively, at 300 K. The climbing image nudged elastic band method (Cl-NEB) was implemented, which revealed activation energy barriers of Li as 0.30 and 0.75 eV for Mn2O3 and Mn3O4, respectively. The findings of the work revealed high specific capacity, low Li diffusion energy barrier, and low open circuit voltage for the Mn2O3-based anode for use in LIBs.
ABSTRACT
Two-dimensional (2D) SnO is a p-type semiconductor that has received research and industrial attention for device-grade applications due to its bipolar conductivity and transparent semiconductor nature. The first-principles investigations based on the generalized gradient approximation (GGA) level of theory often failed to accurately model its structure due to interlayer Van der Waals interactions. This study is carried out to calculate structural and electronic properties of bulk and layered structures of SnO using dispersion correction scheme DFT+D3 with GGA-PBE to deal with the interactions which revealed good agreement of the results with reported data. The material in three-dimensional bulk happened to be an indirect gap semiconductor with a band gap of 0.6 eV which is increased to 2.85 eV for a two-dimensional monolayer structure. The detailed analysis of the properties demonstrated that the SnO monolayer is a promising candidate for future optoelectronics and spintronics devices, especially thin film transistors.
