Targeting Manganese Amidinates and ß-Ketoiminates Complexes as Precursors for Mn-Based Thin Film Vapor Deposition.

With a focus on Mn based organometallic compounds with suitable physico-chemical properties to serve as precursors for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of Mn-containing materials, systematic synthetic approaches with ligand variation, detailed characterization, and theoretical input from density functional theory (DFT) studies are presented. A series of new homoleptic all-nitrogen and mixed oxygen/nitrogen-coordinated Mn(II) complexes bearing the acetamidinate, formamidinate, guanidinate and ß-ketoiminate ligands have been successfully synthesized for the first time. The specific choice of these ligand classes with changes in structure and coordination sphere and side chain variations result in significant structural differences whereby mononuclear and dinuclear complexes are formed. This was supported by density functional theory (DFT) studies. The compounds were thoroughly characterized by single crystal X-ray diffraction, magnetic measurements, mass spectrometry and elemental analysis. To evaluate their suitability as precursors for deposition of Mn-based materials, the thermal properties were investigated in detail. Mn(II) complexes possessing the most promising thermal properties, namely Bis(N,N´-ditertbutylformamidinato)manganese(II) (IV) and Bis(4-(isopropylamino)pent-3-en-2-onato)manganese(II) (ßIII) were used in reactivity studies with DFT to explore their interaction with oxidizing co-reactants such as oxygen and water which will guide future CVD and ALD process development.

Role of titanium and organic precursors in molecular layer deposition of "titanicone" hybrid materials.

The development of hybrid inorganic-organic films with well-controlled properties is important for many applications. Molecular layer deposition (MLD) allows the deposition of these hybrid films using sequential, self-limiting reactions, similar to atomic layer deposition (ALD). In this paper, we use first principles density functional theory (DFT) to investigate the growth mechanism of titanium-containing hybrid organic-inorganic MLD films, known as "titanicones". We investigate in detail the chemistry between the most common Ti precursors, namely titanium tetrachloride (TiCl4) and tetrakis(dimethylamido)titanium (Ti(DMA)4), and ethylene glycol (EG) and glycerol (GL) as the organic precursors. We analyse the impact of the substrate on the initial MLD reactions in titanicone film growth using three different surface models: anatase TiO2, rutile TiO2 and Al2O3. Calculated energetics show that while TiCl4 is reactive towards the anatase and rutile TiO2 surfaces, it is not reactive towards the Al2O3 surface. Ti(DMA)4 is reactive towards all surfaces. This is attributed to the stronger Ti-Cl bonds in TiCl4 compared to Ti-N bonds in Ti(DMA)4. Ti(DMA)4 also shows high reactivity to the organics compared to TiCl4. Double reactions of EG and GL with the TiCl3 species from TiCl4 and TiDMA species from Ti(DMA)4 are also explored to better understand the origin of the different thicknesses of EG-titanicone and GL-titanicone films observed in experimental work. We find that EG and GL coupled with TiCl4 can orient in a flat lying configuration on anatase while on rutile, the preferred orientation is upright. When combined with Ti(DMA)4, EG and GL prefer the flat lying configuration on all surfaces. This work shows that the choice of the surface and the metallic precursor has a major impact on the behaviour of organic species. DFT findings provide motivation to develop a low temperature rutile TiO2/titanicone film suggesting that the desired film growth could be achieved.

Atomic/molecular layer deposition of cerium(III) hybrid thin films using rigid organic precursors.

An atomic/molecular layer deposition (ALD/MLD) process for the fabrication of cerium-based metal-organic hybrid films is demonstrated for the first time. The highly reactive cerium(III) guanidinate precursor [Ce(dpdmg)3] was employed in combination with organic precursors composed of rigid backbones, terephthalic acid (TPA) and hydroquinone (HQ) for the growth of the respective hybrid films. Growth rates of the films as high as 5.4 Å per cycle for Ce-TPA and 4.8 Å per cycle for Ce-HQ at a deposition temperature of 200 °C were obtained. Density functional theory (DFT) investigations confirm the favorable interaction between the cerium precursor and the organic co-reactants and predict that Ce maintains its +3 oxidation state in the films. This was also confirmed experimentally by X-ray photoelectron spectroscopy (XPS). Additionally, the films are highly UV absorbing. Hence, we envision that these films could find future application as promising redox active materials and/or UV absorbing materials.

Role of terminal groups in aromatic molecules on the growth of Al2O3-based hybrid materials.

Hybrid materials composed of organic and inorganic components offer the opportunity to develop interesting materials with well-controlled properties. Molecular Layer Deposition (MLD) is a suitable thin film deposition technique for the controlled growth of thin, conformal hybrid films. Despite the great interest in these materials, a detailed understanding of the atomistic mechanism of MLD film growth is still lacking. This paper presents a first principles investigation of the detailed mechanism of the growth of hybrid organic-inorganic thin films of aluminium oxide and aromatic molecules with different terminal groups deposited by MLD. We investigate the chemistry of the MLD process between the post-TMA pulse methyl-terminated Al2O3 surface and the homo- or hetero-bifunctional aromatic compounds with hydroxy (OH) and/or amino (NH2) terminal groups: hydroquinone (HQ), p-phenylenediamine (PD) and 4-aminophenol (AP). Double reactions of aromatic molecules with the alumina surface are also explored. We show that all aromatic precursor molecules bind favourably to the methyl terminated Al2O3, via formation of Al-O and Al-N bonds and CH4 elimination. While reaction energetics suggest a higher reactivity of the OH group with TMA in comparison to the NH2 group, which could enable the double reaction phenomenon for HQ, we propose that the upright configuration will be present so that the organic molecules are self-assembled in an upright configuration, which leads to thicker hybrid films. Interactions between the methyl-terminated Al2O3 with substituted phenyls are investigated to examine the influence of phenyl functionalisation on the chemistry of the terminal groups. Reaction energetics show that phenyl functionalization actually promotes an upright configuration of the molecule, which leads to thicker and more flexible films, as well as tuning the properties of the aromatic components of the hybrid films. We also investigate the interactions between methyl-terminated Al2O3 with new possible MLD organic precursors, hydroquinone bis(2-hydroxyethyl)ether and 1,1'-biphenyl-4,4'-diamine. DFT shows that both aromatic molecules react favourably with TMA and are worthy of further experimental investigation.

A study on the influence of ligand variation on formamidinate complexes of yttrium: new precursors for atomic layer deposition of yttrium oxide.

The synthesis and characterization of a series of closely related Y(III) compounds comprising the formamidinate ligands (RNCHNR) (R = alkyl) is reported, with the scope of using them as prospective precursors for atomic layer deposition (ALD) of yttrium oxide (Y2O3) thin films. The influence of the side chain variation on the thermal properties of the resulting complexes is studied and benchmarked by thermal analysis and vapor pressure measurements. Density functional theory (DFT) studies give theoretical insights into the reactivity of the compounds towards water, which was targeted as a co-reactant for the deposition of Y2O3via thermal ALD in the next step. Among the four complexes analyzed, tris(N,N'-di-tert-butyl-formamidinato)yttrium(III) [Y(tBu2-famd)3] 1 was found to possess enhanced thermal stability and was selected for Y2O3 ALD process development. A broad ALD window ranging from 200 °C to 325 °C was obtained, yielding films of high compositional quality. Furthermore, with a film density of (4.95 ± 0.05) g cm-1 close to the bulk value, polycrystalline fcc Y2O3 layers with a smooth topography resulted in promising dielectric properties when implemented in metal insulator semiconductor (MIS) capacitor structures.

Rational Development of Guanidinate and Amidinate Based Cerium and Ytterbium Complexes as Atomic Layer Deposition Precursors: Synthesis, Modeling, and Application.

Owing to the limited availability of suitable precursors for vapor phase deposition of rare-earth containing thin-film materials, new or improved precursors are sought after. In this study, we explored new precursors for atomic layer deposition (ALD) of cerium (Ce) and ytterbium (Yb) containing thin films. A series of homoleptic tris-guanidinate and tris-amidinate complexes of cerium (Ce) and ytterbium (Yb) were synthesized and thoroughly characterized. The C-substituents on the N-C-N backbone (Me, NMe2 , NEt2 , where Me=methyl, Et=ethyl) and the N-substituents from symmetrical iso-propyl (iPr) to asymmetrical tertiary-butyl (tBu) and Et were systematically varied to study the influence of the substituents on the physicochemical properties of the resulting compounds. Single crystal structures of [Ce(dpdmg)3 ] 1 and [Yb(dpdmg)3 ] 6 (dpdmg=N,N'-diisopropyl-2-dimethylamido-guanidinate) highlight a monomeric nature in the solid-state with a distorted trigonal prismatic geometry. The thermogravimetric analysis shows that the complexes are volatile and emphasize that increasing asymmetry in the complexes lowers their melting points while reducing their thermal stability. Density functional theory (DFT) was used to study the reactivity of amidinates and guanidinates of Ce and Yb complexes towards oxygen (O2 ) and water (H2 O). Signified by the DFT calculations, the guanidinates show an increased reactivity toward water compared to the amidinate complexes. Furthermore, the Ce complexes are more reactive compared to the Yb complexes, indicating even a reactivity towards oxygen potentially exploitable for ALD purposes. As a representative precursor, the highly reactive [Ce(dpdmg)3 ] 1 was used for proof-of-principle ALD depositions of CeO2 thin films using water as co-reactant. The self-limited ALD growth process could be confirmed at 160 °C with polycrystalline cubic CeO2 films formed on Si(100) substrates. This study confirms that moving towards nitrogen-coordinated rare-earth complexes bearing the guanidinate and amidinate ligands can indeed be very appealing in terms of new precursors for ALD of rare earth based materials.

A carbene stabilized precursor for the spatial atomic layer deposition of copper thin films.

This paper demonstrates a carbene stabilized precursor [Cu(tBuNHC)(hmds)] with suitable volatility, reactivity and thermal stability, that enables the spatial plasma-enhanced atomic layer deposition (APP-ALD) of copper thin films at atmospheric pressure. The resulting conductive and pure copper layers were thoroughly analysed and a comparison of precursor and process with the previously reported silver analogue [Ag(tBuNHC)(hmds)] revealed interesting similarities and notable differences in precursor chemistry and growth characteristics. This first report of APP-ALD grown copper layers is an important starting point for high throughput, low-cost manufacturing of copper films for nano- and optoelectronic devices.

First principles study of reactions in alucone growth: the role of the organic precursor.

Organic-inorganic hybrid materials are a unique class of materials with properties driven by the organic and inorganic components, making them useful for flexible devices. Molecular layer deposition (MLD) offers novel pathways for the fabrication of such hybrids by using inorganic metal precursors and the vast range of organic molecules with tunable properties. To investigate and understand the mechanism of growth a combination of theoretical and experimental data is needed. In this contribution, we present a first principles investigation of the molecular mechanism of the growth of hybrid organic-inorganic thin films of aluminium alkoxides, known as "alucones" grown by MLD. We explore the interactions between precursors by analyzing the MLD reaction products of the alumina surface terminated with Al(CH3) groups after the trimethyl aluminium pulse; this yields monomethyl-Al2O3 (Al-CH3-Al2O3) and dimethyl-Al2O3 (Al(CH3)2-Al2O3) terminated surfaces. The organic precursors are ethylene glycol (EG), diethylene glycol (DEG), triethylene glycol (TEG) and tetraethylene glycol (FEG). A detailed comparison with alucones grown with ethylene glycol (EG) and glycerol (GL) precursors is presented to assist the interpretation of experimental findings regarding the differences in the hybrid films grown by EG and GL. The results show that Al-O formation with release of methane is favorable for all precursors. EG and GL can lie flat and create so-called double reactions through the reaction of the two terminal hydroxyl groups with the surface fragments. This phenomenon removes active hydroxyl sites for EG. However, for GL the third hydroxyl group is available and growth can proceed. This analysis shows the origin of differences in thickness of alucones found for EG and GL.