Oxygen Vacancies and Surface Wettability: Key Factors in Activating and Enhancing the Solar Photocatalytic Activity of ZnO Tetrapods.

This paper reports on the high photocatalytic activity of ZnO tetrapods (ZnO-Ts) using visible/solar light and hydrodynamic water flow. It was shown that surface oxygen defects are a key factor in the photocatalytic activity of the ZnO-Ts. The ability to control the surface wettability of the ZnO-Ts and the associated concentration of surface defects was demonstrated. It was demonstrated that the photocatalytic activity during the MB decomposition process under direct and simulated sunlight is essentially identical. This presents excellent prospects for utilizing the material in solar photocatalysis.

A Porous Nanostructured ZnO Layer for Ultraviolet Sensing with Quartz Crystal Microbalance Technique.

Porous films of metals and metal oxides have gained growing attention as potential materials for use in applications that require large, specific surface areas, such as sensors, supercapacitors, and batteries. In this study, a "black-metal"-like porous Zn-ZnO composite layer was grown by room temperature co-sputtering of Zn metal and ZnO:Ga (3 at/%) ceramic targets. Following deposition, a porous ZnO layer was obtained by a subsequent thermal annealing process at 400 °C in air. The morphology and structural properties of the obtained porous layered objects were analyzed. The porosity and chemical characteristics of the nanostructured ZnO layer obtained with the method herein described make it suitable to be used as a sensitivity-enhancing active layered element in quartz crystal microbalance (QCM)-based ultraviolet (UV) sensors. The prepared resonant ZnO/QCM sensors under UV radiation exhibited maximum shift up to 35 Hz for several "on-off" UV cycles, excellent response, and recovery times of 11 and 12 s, respectively.

Influence of Plasma Treatment Parameters on the Structural-Phase Composition, Hardness, Moisture-Resistance, and Raman-Enhancement Properties of Nitrogen-Containing Titanium Dioxide.

The paper shows, for the first time, the prospects of treatment with a quasi-equilibrium low-temperature nitrogen plasma in an open atmosphere for the formation of super-hard, super-hydrophobic TiN/TiO2 composite coatings with pronounced Raman-enhancement properties. X-ray diffractometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman spectroscopy, as well as the analysis of hardness and moisture-resistance properties, are used as analytical research methods. During plasma treatment of titanium films on sapphire with a mass average temperature of 4-6 kK, an X-ray amorphous hydrophilic titanium oxide film with a low nitrogen content is formed. The nitrogen content in titanium oxide films increases with increasing treatment temperature up to 6-7 kK. In this case, an X-ray amorphous hydrophobic film is formed. With a further increase in temperature to 7-10 kK, a TiN/TiO2 composite structure based on polycrystalline rutile is formed with increased hydrophobicity and pronounced Raman enhancement properties due to the effective excitation of surface plasmon polaritons. The presence of the crystalline phase increases the dephasing time, which determines the quality of the resonance and the achievable amplification of the electromagnetic field near the TiN inclusions. All treated films on sapphire have a super-hardness above 25 GPa (Vickers hardness test) due to high grain size, the presence of nitrogen-containing inclusions concentrated along grain boundaries, and compressive stresses.

Excitonic Mechanisms of Stimulated Emission in Low-Threshold ZnO Microrod Lasers with Whispering Gallery Modes.

Whispering gallery mode (WGM) ZnO microlasers gain attention due to their high Q-factors and ability to provide low-threshold near-UV lasing. However, a detailed understanding of the optical gain mechanisms in such structures has not yet been achieved. In this work, we study the mechanisms of stimulated emission (SE) in hexagonal ZnO microrods, demonstrating high-performance WGM lasing with thresholds down to 10-20 kW/cm2 and Q-factors up to ~3500. The observed SE with a maximum in the range of 3.11-3.17 eV at room temperature exhibits a characteristic redshift upon increasing photoexcitation intensity, which is often attributed to direct recombination in the inverted electron-hole plasma (EHP). We show that the main contribution to room-temperature SE in the microrods studied, at least for near-threshold excitation intensities, is made by inelastic exciton-electron scattering rather than EHP. The shape and perfection of crystals play an important role in the excitation of this emission. At lower temperatures, two competing gain mechanisms take place: exciton-electron scattering and two-phonon assisted exciton recombination. The latter forms emission with a maximum in the region near ~3.17 eV at room temperature without a significant spectral shift, which was observed only from weakly faceted ZnO microcrystals in this study.

Morphology and Luminescence of Flexible Free-Standing ZnO/Zn Composite Films Grown by Vapor Transport Synthesis.

A method for fabricating flexible free-standing ZnO/Zn composite films from the vapor phase using a regular array of silicon microwhiskers as a substrate is presented. The structural and morphological peculiarities, as well as luminescent properties of the films, were studied. The films have a hybrid structure consisting of two main microlayers. The first layer is formed directly on the tops of Si whiskers and has a thickness up to 10 µm. This layer features a polycrystalline structure and well-developed surface morphology. The second layer, which makes up the front side of the films, is up to 100 µm thick and consists of large microcrystals. The films show good bending strength-in particular, resistance to repeated bending and twisting-which is provided by a zinc metallic part constituting the flexible carrier of the films. ZnO photoluminescence was observed from both surfaces of the films but with conspicuous spectral differences. In particular, a significant weakening of ZnO green luminescence (more than 10 times) at an almost constant intensity of UV near-band edge emission was found for the polycrystalline side of the films as compared to the microcrystalline side. A high degree of homogeneity of the luminescent properties of the films over their area was demonstrated. The results obtained emphasize the relevance of further studies of such ZnO structures-in particular, for application in flexible devices, sensors, photocatalysis and light generation.

Synthesis of Superhydrophobic Barium Hexaferrite Coatings with Low Magnetic Hardness.

Using the multifunctional material barium hexaferrite as an example, the prospects for treatment at a quasi-equilibrium low temperature in an open atmosphere to form superhydrophobic magnetic coatings with pronounced crystalline and magnetic anisotropy have been demonstrated for the first time. The relationship between plasma treatment conditions, structural-phase composition, morphology, and superhydrophobic properties of (0001) films of barium hexaferrite BaFe12O19 on C-sapphire is studied. X-ray photoelectron spectroscopy (XPS), X-ray diffractometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), as well as magnetometry and moisture resistance analysis, were used as research methods. During plasma treatment with a mass-average temperature of 8-10 kK, intense evaporation and surface melting were observed, and texturing of the deposit along (0001) is found. When the treatment temperature was reduced to 4-5 kK, the evaporation of the material was minimized and magnetic and crystal anisotropy increased. However, the increase in the size of crystallites was accompanied by the transition of oxygen atoms from lattice nodes to interstitial positions. All samples exhibited low coercive fields below 500 Oe, associated with the frustration of the magnetic subsystem. Features of growth of materials with a wurtzite structure were used to form a superhydrophobic coating of barium hexaferrite. Plasma treatment regimes for obtaining self-cleaning coatings are proposed. The use of magnetically hard barium hexaferrite to radically change the properties of a coating is demonstrated herein as an example.

Interference Phenomena and Stimulated Emission in ZnO Films on Sapphire.

We studied the texturing, roughness, and morphology features of ZnO films grown on the R (11¯02)-, M (101¯0)-, A (112¯0)-, and C (0001)-planes of sapphire, as well as their optical and luminescent properties. We showed that the growth conditions, substrate orientation, and the presence of a buffer layer significantly affected the structure and morphology of the growing films, which was reflected in their optical and radiative properties. In particular, films grown on the A- and M- planes of sapphire showed the highest UV radiation brightness values and exhibited stimulated emissions upon pulsed photoexcitation. The dependence of the topography of the film surface on the substrate orientation allowed the formation of a smooth continuous film with pronounced interference properties using the R- and M- planes of sapphire. A change in the crystallographic orientation, as well as a significant enhancement in crystallinity and luminescence, were observed for ZnO films grown on R-plane sapphire substrates with a gold buffer layer as compared to films grown on bare substrates. At the same time, the use of gold facilitates a significant smoothing of the film's surface, retaining its interference properties. The sensitivity of interference and laser properties to changes in the external environment, as well as the ease of fabrication of such structures, create prospects for their application as key elements of optical converters, chemical and biological sensors, and sources of coherent radiation.

Cathodoluminescent Analysis of Sapphire Surface Etching Processes in a Medium-Energy Electron Beam.

Sapphire crystals are widely used in optics and optoelectronics. In this regard, it is important to study the stability of crystals under external influence and the possibility of modifying their surfaces by external influence. This work presents the results of studying the processes of the action of an electron beam with an average energy of 70 keV or less under vacuum conditions on the surfaces of sapphire substrates of various orientations. The effect of etching a sapphire surface by an electron beam in vacuum at room temperature was discovered. The highest etching rate was observed for A-plane sapphire (the average pit etching rate was 10-6 µm3/s). It was shown that the rate of etching of a sapphire surface increased many times over when gold is deposited. An in situ method for studying the process of etching a sapphire surface using cathodoluminescence analysis was considered. Possible mechanisms of sapphire etching by a beam of bombarding electrons were considered. The results obtained could be important in solving the problem of the stability of sapphire windows used in various conditions, including outer space. In addition, the proposed method of metal-stimulated etching of a sapphire surface can be widely used in patterned sapphire substrate (PSS) technology and further forming low-dislocation light-emitting structures on them.

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes.

The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In2O3) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In2O3 content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In2O3) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.

Ultraviolet Luminescence of ZnO Whiskers, Nanowalls, Multipods, and Ceramics as Potential Materials for Fast Scintillators.

The presented work is dedicated to the study and comparison of scintillating properties of zinc oxide samples prepared in different morphologies: whiskers, nanowalls, multipods, and ceramics. It was shown that total transmittance, photo- and radioluminescence spectra, and radioluminescence kinetics can vary significantly depending on sample structure and preparation conditions. The highest total transmittance was registered for ZnO ceramics (>50% at 0.5 mm thickness). Differences in the transmittance of whiskers, nanowalls, and multipods can be attributed to their shape and thickness which affects the amount of light refraction and scattering. The study of radioluminescence demonstrated that all samples, except undoped ceramics and air annealed whiskers, have predominantly fast luminescence with a decay time <1 ns. High transmittance of ceramics opens the way for their use in the registration of high energy X-ray and gamma radiation, where a large volume of scintillators is required. In cases, where large scintillator thickness is not a necessity, one may prefer to use other ZnO structures, such as ensembles of whiskers and nanowalls. Studies of near-band-edge luminescence components at low temperatures showed that the structure is quite similar in all samples except Ga doped ceramics.