Absolute energy levels in nanodiamonds of different origins and surface chemistries.

Nanodiamonds (NDs) are versatile, broadly available nanomaterials with a set of features highly attractive for applications from biology over energy harvesting to quantum technologies. Via synthesis and surface chemistry, NDs can be tuned from the sub-micron to the single-digit size, from conductive to insulating, from hydrophobic to hydrophilic, and from positively to negatively charged surface by simple annealing processes. Such ND diversity makes it difficult to understand and take advantage of their electronic properties. Here we present a systematic correlated study of structural and electronic properties of NDs with different origins and surface terminations. The absolute energy level diagrams are obtained by the combination of optical (UV-vis) and photoelectron (UPS) spectroscopies, Kelvin probe measurements, and energy-resolved electrochemical impedance spectroscopy (ER-EIS). The energy levels and density of states in the bandgap of NDs are correlated with the surface chemistry and structure characterized by FTIR and Raman spectroscopy. We show profound differences in energy band shifts (by up to 3 eV), Fermi level position (from p-type to n-type), electron affinity (from +0.5 eV to -2.2 eV), optical band gap (5.2 eV to 5.5 eV), band gap states (tail or mid-gap), and electrical conductivity depending on the high-pressure, high-temperature and detonation origin of NDs as well as on the effects of NDs' oxidation, hydrogenation, sp2/sp3 carbon phases and surface adsorbates. These data are fundamental for understanding and designing NDs' optoelectrochemical functional mechanisms in diverse application areas.

A synergistic effect of the ion beam sputtered NiOxhole transport layer and MXene doping on inverted perovskite solar cells.

The synergistic effect of high-quality NiOxhole transport layers (HTLs) deposited by ion beam sputtering on ITO substrates and the Ti3C2TxMXene doping of CH3NH3PbI3(MAPI) perovskite layers is investigated in order to improve the power conversion efficiency (PCE) of p-i-n perovskite solar cells (PSCs). The 18 nm thick NiOxlayers are pinhole-free and exhibit large-scale homogeneous surface morphology as revealed by the atomic force microscopy (AFM). The grazing-incidence x-ray diffraction showed a 0.75% expansion of the face-centered cubic lattice, suggesting an excess of oxygen as is typical for non-stoichiometric NiOx. The HTLs were used to fabricate the PSCs with MXene-doped MAPI layers. A PSC with undoped MAPI layer served as a control. The size of MAPI polycrystalline grains increased from 430 ± 80 nm to 620 ± 190 nm on the doping, as revealed by AFM. The 0.15 wt% MXene doping showed a 14.3% enhancement in PCE as compared to the PSC with undoped MAPI. The energy-resolved electrochemical impedance spectroscopy revealed one order of magnitude higher density of defect states in the band gap of MXene-doped MAPI layer, which eliminated beneficial effect of reduced total area of larger MAPI grain boundaries, decreasing short-circuit current. The PCE improvement is attributed to a decrease of the work function from -5.26 eV to -5.32 eV on the MXene doping, which increased open-circuit voltage and fill factor.

Thickness Dependence of Electronic Structure and Optical Properties of F8BT Thin Films.

Electronic devices based on polymer thin films have experienced a tremendous increase in their efficiency in the last two decades. One of the critical factors that affects the efficiency of polymer solar cells or light emitting devices is the presence of structural defects that controls non-radiative recombination. The purpose of this report is to demonstrate a non-trivial thickness dependence of optoelectronic properties and structure (dis)order in thin conductive poly(9,9-dioctyfluorene-alt-benzothiadiazole), F8BT, polymer films. The UV-Vis absorption spectra exhibited blue shift and peak broadening; significant changes in 0-0 and 0-1 radiative transition intensity was found in photoluminescence emission spectra. The density of state (DOS) was directly mapped by energy resolved-electrochemical impedance spectroscopy (ER-EIS). Satellite states 0.5 eV below the lowest unoccupied molecular orbital (LUMO) band were revealed for the thinner polymer films. Moreover, the decreasing of the deep states density in the band gap manifested an increment in the material structural ordering with increasing thickness. Changes in the ratio between crystalline phases with face-on and edge-on orientation of F8BT chains were identified in the films by grazing-incidence wide angle X-ray scattering technique. A thickness threshold in all investigated aspects of the films at a thickness of about 100 nm was observed that can be attributed to the development of J-H aggregation in the film structure and mutual interplay between these two modes. Although a specific structure-property relationship thickness threshold value may be expected for thin films prepared from various polymers, solvents and under different process conditions, the value of about 100 nm can be generally considered as the characteristic length scale of this phenomenon.

Selected Electrochemical Properties of 4,4'-((1E,1'E)-((1,2,4-Thiadiazole-3,5-diyl)bis(azaneylylidene))bis(methaneylylidene))bis(N,N-di-p-tolylaniline) towards Perovskite Solar Cells with 14.4% Efficiency.

Planar perovskite solar cells were fabricated on F-doped SnO2 (FTO) coated glass substrates, with 4,4'-((1E,1'E)-((1,2,4-thiadiazole-3,5-diyl)bis(azaneylylidene))bis(methaneylylidene))bis(N,N-di-p-tolylaniline) (bTAThDaz) as hole transport material. This imine was synthesized in one step reaction, starting from commercially available and relatively inexpensive reagents. Electrochemical, optical, electrical, thermal and structural studies including thermal images and current-voltage measurements of the full solar cell devices characterize the imine in details. HOMO-LUMO of bTAThDaz were investigated by cyclic voltammetry (CV) and energy-resolved electrochemical impedance spectroscopy (ER-EIS) and were found at -5.19 eV and -2.52 eV (CV) and at -5.5 eV and -2.3 eV (ER-EIS). The imine exhibited 5% weight loss at 156 °C. The electrical behavior and photovoltaic performance of the perovskite solar cell was examined for FTO/TiO2/perovskite/bTAThDaz/Ag device architecture. Constructed devices exhibited good time and air stability together with quite small effect of hysteresis. The observed solar conversion efficiency was 14.4%.

Kinetics of Polymer-Fullerene Phase Separation during Solvent Annealing Studied by Table-Top X-ray Scattering.

Solvent annealing is an efficient way of phase separation in polymer-fullerene blends to optimize bulk heterojunction morphology of active layer in polymer solar cells. To track the process in real time across all relevant stages of solvent evaporation, laboratory-based in situ small- and wide-angle X-ray scattering measurements were applied simultaneously to a model P3HT:PCBM blend dissolved in dichlorobenzene. The PCBM molecule agglomeration starts at ∼7 wt % concentration of solid content of the blend in solvent. Although PCBM agglomeration is slowed-down at ∼10 wt % of solid content, the rate constant of phase separation is not changed, suggesting agglomeration and reordering of P3HT molecular chains. Having the longest duration, this stage most affects BHJ morphology. Phase separation is accelerated rapidly at concentration of ∼25 wt %, having the same rate constant as the growth of P3HT crystals. P3HT crystallization is driving force for phase separation at final stages before a complete solvent evaporation, having no visible temporal overlap with PCBM agglomeration. For the first time, such a study was done in laboratory demonstrating potential of the latest generation table-top high-brilliance X-ray source as a viable alternative before more sophisticated X-ray scattering experiments at synchrotron facilities are performed.

Orientation ordering of nanoparticle Ag/Co cores controlled by electric and magnetic fields.

The effect of electric and magnetic fields on the sandwich structure Pt/hydrogenated amorphous silicon (a-Si:H)/stearic acid monolayer/Langmuir-Blodgett film of Ag/Co nanoparticles encapsulated in an organic envelope is studied. This structure is used as a working electrode in an electrochemical cell filled with NaCl solution (1 mM) and equipped with an Ag/AgCl reference electrode. Reversible changes in voltammograms are observed due to treatments (negative or positive bias voltage and simultaneous laser irradiation) applied to the designed structure before measurements. As an explanation of the observed phenomena we suggest that both the Co-up and Ag-up (on the a-Si:H surface) orientation orderings of nanoparticle Ag/Co cores are repeatedly reached. The role of the photovoltaic material (a-Si:H) in the observed behavior is explained. Voltammetric measurements with an applied magnetic field support our idea about the orientation ordering of nanoparticle cores.

Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.