Beyond Gold: Spin-Coated Ti3 C2 -Based MXene Photodetectors.

2D transition metal carbides, known as MXenes, are transparent when the samples are thin enough. They are also excellent electrical conductors with metal-like carrier concentrations. Herein, these characteristics are exploited to replace gold (Au) in GaAs photodetectors. By simply spin-coating transparent Ti3 C2 -based MXene electrodes from aqueous suspensions onto GaAs patterned with a photoresist and lifted off with acetone, photodetectors that outperform more standard Au electrodes are fabricated. Both the Au- and MXene-based devices show rectifying contacts with comparable Schottky barrier heights and internal electric fields. The latter, however, exhibit significantly higher responsivities and quantum efficiencies, with similar dark currents, hence showing better dynamic range and detectivity, and similar sub-nanosecond response speeds compared to the Au-based devices. The simple fabrication process is readily integratable into microelectronic, photonic-integrated circuits and silicon photonics processes, with a wide range of applications from optical sensing to light detection and ranging and telecommunications.

Performance enhancement of a GaAs detector with a vertical field and an embedded thin low-temperature grown layer.

Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster--~6 ps for a cathode-anode separation of 1.3 µm and ~12 ps for distances more than 3 µm.

Photocurrent properties of single GaAs/AlGaAs core-shell nanowires with Schottky contacts.

Conductivity and photoconductivity properties of individual GaAs/AlGaAs core-shell nanowires (NWs) are reported. The NWs were grown by Au-assisted metalorganic vapor phase epitaxy, and then dispersed on a substrate where electrical contacts were defined on the individual NWs by electron beam induced deposition. Under dark conditions, the carrier transport along the NW is found to be limited by Schottky contacts, and influenced by the presence of an oxide layer. Nonetheless, under illumination, the GaAs/AlGaAs core-shell NW shows a significant photocurrent, much higher than the bare GaAs NW. The spatial dependence of the photocurrent within the single core-shell NW, evaluated by a mapping technique, confirms the blocking behavior of the contacts. Moreover, local spectral measurements were performed which allow one to discriminate the contribution of carriers photogenerated in the core and in the shell.

Excitation of local field enhancement on silicon nanowires.

The interaction between light and reduced-dimensionality silicon attracts significant interest due to the possibilities of designing nanoscaled optical devices, highly cost-efficient solar cells, and ultracompact optoelectronic systems that are integrated with standard microelectronic technology. We demonstrate that Si nanowires (SiNWs) possessing metal-nanocluster coatings support a multiplicatively enhanced near-field light-matter interaction. Raman scattering from chemisorbed probing molecules provides a quantitative measure of the strength of this enhanced coupling. An enhancement factor of 2 orders of magnitude larger than that for the surface plasmon resonance alone (without the SiNWs) along with the attractive properties of SiNWs, including synthetic controllability of shape, indicates that these nanostructures may be an attractive and versatile material platform for the design of nanoscaled optical and optoelectronic circuits.

Instability and transport of metal catalyst in the growth of tapered silicon nanowires.

During metal-catalyzed growth of tapered silicon nanowires, or silicon nanocones (SiNCs), Au-Si eutectic particles are seen to undergo significant and reproducible reductions in their diameters. The reductions are accompanied by the transfer of eutectic droplet mass to adjacent, initially metal catalyst-free substrates, producing secondary nucleation and growth of SiNCs. Remarkably, the catalyst particle diameters on the SiNCs grown on the adjacent substrates are strongly correlated with those on the SiNCs grown on the initially Au-nanoparticle-coated substrate. These post-growth nanoparticle sizes depend on temperature and are found to be independent of the initial nanoparticle sizes. Our modeling and analysis indicates that the size reduction and mass transfer could be explained by electrostatic charge-induced dissociation of the droplet. The reduction in size enables the controlled growth of SiNCs with tip sharpnesses approaching the atomic scale, indicating that metal-catalyst nanoparticles can play an even more dynamic role than previously thought, and suggesting additional modes of control of shape, and of nucleation and growth location.

Enhanced Raman scattering from individual semiconductor nanocones and nanowires.

We report strong enhancement (approximately 10(3)) of the spontaneous Raman scattering from individual silicon nanowires and nanocones as compared with bulk Si. The observed enhancement is diameter (d), excitation wavelength (lambda(laser)), and incident polarization state dependent, and is explained in terms of a resonant behavior involving incident electromagnetic radiation and the structural dielectric cross section. The variation of the Raman enhancement with d, lambda(laser), and polarization is shown to be in good agreement with model calculations of scattering from an infinite dielectric cylinder.

Diamond-hexagonal semiconductor nanocones with controllable apex angle.

We report on the synthesis of nanostructured and crystalline tapered Si and Ge polyhedra via metal-catalyzed chemical vapor deposition. These Si and Ge nanocones (SiNCs, GeNCs) possess tips with near-atomic sharpness, micron-scaled bases, hexagonal cross-sections, and controllable apex angles. High-resolution transmission electron microscopy, selected-area electron diffraction and Raman scattering spectroscopy and analysis indicate that the SiNCs are of the diamond-hexagonal Si(IV) phase.