Model Approach to Thermal Conductivity in Hybrid Graphene-Polymer Nanocomposites.

The thermal conductivity of epoxy nanocomposites filled with self-assembled hybrid nanoparticles composed of multilayered graphene nanoplatelets and anatase nanoparticles was described using an analytical model based on the effective medium approximation with a reasonable amount of input data. The proposed effective thickness approach allowed for the simplification of the thermal conductivity simulations in hybrid graphene@anatase TiO2 nanosheets by including the phenomenological thermal boundary resistance. The sensitivity of the modeled thermal conductivity to the geometrical and material parameters of filling particles and the host polymer matrix, filler's mass concentration, self-assembling degree, and Kapitza thermal boundary resistances at emerging interfaces was numerically evaluated. A fair agreement of the calculated and measured room-temperature thermal conductivity was obtained.

Nickel-Fullerene Nanocomposites as Thermoelectric Materials.

Nickel films with nanovoids filled with fullerene molecules have been fabricated. The thermoelectric properties of the nanocomposites have been measured from room temperature down to about 30 K. The main idea is that the phonon scattering can be enhanced at the C60/matrix heterointerface. The distribution of atoms within the Ni and Ni-C60 layers has been characterized by Auger depth profiling. The morphology of the grown samples has been checked using cross-sectional scanning electron microscopy (SEM). The Seebeck coefficient and electrical conductivity have been addressed employing an automatic home-built measuring system. It has been found that nanostructuring using Ar+ ion treatment increases the thermopower magnitude over the entire temperature range. Incorporating C60 into the resulting voids further increased the thermopower magnitude below ≈200 K. A maximum increase in the Seebeck coefficient has been measured up to four times in different fabricated samples. This effect is attributed to enhanced scattering of charge carriers and phonons at the Ni/C60 boundary.

Frequency-Dependent Sonochemical Processing of Silicon Surfaces in Tetrahydrofuran Studied by Surface Photovoltage Transients.

The field of chemical and physical transformations induced by ultrasonic waves has shown steady progress during the past decades. There is a solid core of established results and some topics that are not thoroughly developed. The effect of varying ultrasonic frequency is among the most beneficial issues that require advances. In this work, the effect of sonication of Si wafers in tetrahydrofuran on the photovoltage performance was studied, with the specific goal of studying the influence of the varying frequency. The applied ultrasonic transducer design approach enables the construction of the transducer operating at about 400 kHz with a sufficient sonochemical efficiency. The measurements of the surface photovoltage (SPV) transients were performed on p-type Cz-Si(111) wafers. Sonication was done in tetrahydrofuran, methanol, and in their 3:1 mixture. When using tetrahydrofuran, the enhanced SPV signal (up to ≈80%) was observed due to increasing sonication frequency to 400 kHz. In turn, the signal was decreased down to ≈75% of the initial value when the frequency is lowered to 28 kHz. The addition of methanol suppressed this significant difference. It was implied that different decay processes with hydrogen decomposed from tetrahydrofuran could be attempted to explain the mechanism behind the observed frequency-dependent behavior.

Enhancing the Seebeck effect in Ge/Si through the combination of interfacial design features.

Due to their inherent physical properties, thin-film Si/SiGe heterostructures have specific thermal management applications in advanced integrated circuits and this in turn is essential not only to prevent a high local temperature and overheat inside the circuit, but also generate electricity through the Seebeck effect. Here, we were able to enhance the Seebeck effect in the germanium composite quantum dots (CQDs) embedded in silicon by increasing the number of thin silicon layers inside the dot (multi-fold CQD material). The Seebeck effect in the CQD structures and multi-layer boron atomic layer-doped SiGe epitaxial films was studied experimentally at temperatures in the range from 50 to 300 K and detailed calculations for the Seebeck coefficient employing different scattering mechanisms were made. Our results show that the Seebeck coefficient is enhanced up to ≈40% in a 3-fold CQD material with respect to 2-fold Ge/Si CQDs. This enhancement was precisely modeled by taking into account the scattering of phonons by inner boundaries and the carrier filtering by the CQD inclusions. Our model is also able to reproduce the observed temperature dependence of the Seebeck coefficient in the B atomic layer-doped SiGe fairly well. We expect that the phonon scattering techniques developed here could significantly improve the thermoelectric performance of Ge/Si materials through further optimization of the layer stacks inside the quantum dot and of the dopant concentrations.

A model for predicting the thermal conductivity of SiO2-Ge nanoparticle composites.

We present a simple theoretical model that predicts the thermal conductivity of SiO2 layers with embedded Ge quantum dots (QDs). Overall, the resulting nanoscale architecture comprising the structural relaxation in the SiO2 matrix, deviation in mass density of the QDs compared to the surrounding matrix and local strains associated with the dots are all likely to enhance phonon scattering and thus reduce the thermal conductivity in these systems. We have found that the conductivity reduction can be predicted by the dot-induced local elastic perturbations in SiO2. Our model is able to explain not only this large reduction but also the magnitude and temperature variation of the thermal conductivity with size and density of the dots. Within the error range, the theoretical calculations of the temperature-dependent thermal conductivity in different samples are in close agreement with the experimental measurements. Including the details of the strain fields in oxidized Si nanostructured layers is therefore essential for a better prediction of the heat pathways in on-chip thermoelectric devices and circuits.