Your browser doesn't support javascript.
loading
Show: 20 | 50 | 100
Results 1 - 2 de 2
Filter
Add more filters










Database
Language
Publication year range
1.
Mater Horiz ; 2024 Jun 19.
Article in English | MEDLINE | ID: mdl-38894698

ABSTRACT

Phase changes in oxide materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V : O stoichiometry offers a vast electronic phase space with non-trivial collective properties. Here, we report the observation of discrete threshold switching voltages (Vth) with constant ΔVth between cycles in vanadium oxide crystals. The observed threshold fields over 10 000 cycles are ∼100× lower than that noted for stoichiometric VO2 and show unique discrete behaviour with constant ΔVth. We correlate the observed discrete memristor behaviour with the valence change mechanism and fluctuations in the chemical composition of spatially distributed VO2-VnO2n-1 complex oxide phases that can synergistically co-operate with the insulator-metal transition resulting in sharp current jumps. The design of chemical heterogeneity in oxide crystals, therefore, offers an intriguing path to realizing low-energy neuromorphic devices.

2.
Nanotechnology ; 35(21)2024 Mar 04.
Article in English | MEDLINE | ID: mdl-38364265

ABSTRACT

We report for the first time MoS2/CNT hybrid nanostructures for memristor applications on flexible and bio-degradable cellulose paper. In our approach, we varied two different weight percentages (10% and 20%) of CNT's in MoS2to improve the MoS2conductivity and investigate the memristor device characteristics. The device with 10% CNT shows a lowVSETvoltage of 2.5 V, which is comparatively small for planar devices geometries. The device exhibits a long data retention time and cyclic current-voltage stability of ∼104s and 102cycles, making it a potential candidate in flexible painted electronics. Along with good electrical performance, it also demonstrates a high mechanical stability for 1000 bending cycles. The conduction mechanism in the MoS2-CNT hybrid structure is corroborated by percolation and defect-induced filament formation. Additionally, the device displays synaptic plasticity performance, simulating potentiation and depression processes. Furthermore, such flexible and biodegradable cellulose-based paper electronics may pave the way to address the environmental pollution caused by electronic waste in the near future.

SELECTION OF CITATIONS
SEARCH DETAIL
...