ABSTRACT
Surface photovoltage spectroscopy (SPS) is used to measure the photopotential across a Ru-SrTiO3:Rh/BiVO4 particle tandem overall water splitting photocatalyst. The tandem is synthesized from Ru-modified SrTiO3:Rh nanocrystals and BiVO4 microcrystals by electrostatic assembly followed by thermal annealing. It splits water into H2 and O2 with an apparent quantum efficiency of 1.29% at 435 nm and a solar to hydrogen conversion efficiency of 0.028%. According to SPS, a photovoltage develops above 2.20 eV, the effective band gap of the tandem, and reaches its maximal value of -2.45 V at 435 nm (2.44 mW cm-2), which corresponds to 96% of the theoretical limit of the photocatalyst film on the fluorine-doped tin-oxide-coated glass (FTO) substrate. Charge separation is 82% reversible with 18% of charge carriers being trapped in defect states. The unusually strong light intensity dependence of the photovoltage (1.16 V per decade) is attributed to depletion layer changes inside of the BiVO4 microcrystals. These findings promote the understanding of solar energy conversion with inorganic particle photocatalysts.
ABSTRACT
Surface photovoltage spectroscopy (SPS) was used to study the photochemistry of mercaptoethanol-ligated CdSe quantum dot (2.0-4.2 nm diameter) films on indium doped tin oxide (ITO) in the absence of an external bias or electrolyte. The n-type films generate negative voltages under super band gap illumination (0.1-0.5 mWâ¯cm(-2)) by majority carrier injection into the ITO substrate. The photovoltage onset energies track the optical band gaps of the samples and are assigned as effective band gaps of the films. The photovoltage values (-125 to -750 mV) vary with quantum dot sizes and are modulated by the built-in potential of the CdSe-ITO Schottky type contacts. Deviations from the ideal Schottky model are attributed to Fermi level pinning in states approximately 1.1 V negative of the ITO conduction band edge. Positive photovoltage signals of +80 to +125 mV in films of >4.0 nm nanocrystals and in thin (70 nm) nanocrystal films are attributed to electron-hole (polaron) pairs that are polarized by a space charge layer at the CdSe-ITO boundary. The space charge layer is 70-150 nm wide, based on thickness-dependent photovoltage measurements. The ability of SPS to directly measure built-in voltages, space charge layer thickness, sub-band gap states, and effective band gaps in drop-cast quantum dot films aids the understanding of photochemical charge transport in quantum dot solar cells.
ABSTRACT
Nickel(II) oxide (NiO) is an important wide gap p-type semiconductor used as a hole transport material for dye sensitized solar cells and as a water oxidation electrocatalyst. Here we demonstrate that nanocrystals of the material have increased p-type character and improved photocatalytic activity for hydrogen evolution from water in the presence of methanol as sacrificial electron donor. NiO nanocrystals were synthesized by hydrolysis of Ni(II) nitrate under hydrothermal conditions followed by calcination in air. The crystals have the rock salt structure type and adopt a plate-like morphology (50-90 nm × 10-15 nm). Diffuse reflectance absorbance spectra indicate a band gap of 3.45 eV, similar to bulk NiO. Photoelectrochemical measurements were performed at neutral pH with methylviologen as electron acceptor, revealing photo-onset potentials (Fermi energies) of 0.2 and 0.05 eV (NHE) for nanoscale and bulk NiO, respectively. Nano-NiO and NiO-Pt composites obtained by photodepositon of H2PtCl6 catalyze hydrogen evolution from aqueous methanol at rates of 0.8 and 4.5 µmol H2 h(-1), respectively, compared to 0.5 and 2.1 µmol H2 h(-1) for bulk-NiO and NiO-Pt (20 mg of catalyst, 300 W Xe lamp). Surface photovoltage spectroscopy of NiO and NiO-Pt films on Au substrates indicate a metal Pt-NiO junction with 30 mV photovoltage that promotes carrier separation. The increased photocatalytic and photoelectrochemical performance of nano-NiO is due to improved minority carrier extraction and increased p-type character, as deduced from Mott-Schottky plots, optical absorbance, and X-ray photoelectron spectroscopy data.
ABSTRACT
The charge transfer properties of interfaces are central to the function of photovoltaic and photoelectrochemical cells and photocatalysts. Here we employ surface photovoltage spectroscopy (SPS) to study photochemical charge transfer at a p-silicon/n-BiVO4 particle interface. Particle films of BiVO4 on an aluminum-doped p-silicon wafer were obtained by drop-coating particle suspensions followed by thermal annealing at 353 K. Photochemical charge separation of the films was probed as a function of layer thickness and illumination intensity, and in the presence of methanol as a sacrificial electron donor. Electron injection from the BiVO4 into the p-silicon is clearly observed to occur and to result in a maximum photovoltage of 150 mV for a 1650 nm thick film under 0.3 mW cm(-2) illumination at 3.5 eV. This establishes the BiVO4-p-Si interface as a tandem-like junction. Charge separation in the BiVO4 film is limited by light absorption and by slow electron transport to the Si interface, based on time-dependent SPS measurements. These problems need to be overcome in functional tandem devices for photoelectrochemical water oxidation.