In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system.

We have developed an in situ mask that enables the selective formation of molecular beam epitaxially grown layers in narrow regions. This mask can be fitted to a sample holder and removed in an ultrahigh-vacuum environment; thus, device structures can be fabricated without exposing the sample surfaces to air. Moreover, this mask enables the observation of reflection high-energy electron diffraction during growth with the mask positioned on the sample holder and provides for the formation of marker layers for ensuring alignment in the processes following the selective growth. To explore the effectiveness of the proposed in situ mask, we used it to grow quantum dot (QD) structures in narrow regions and verified the perfect selectivity of the QD growth. The grown QDs exhibited high optical quality with a photoluminescence peak at approximately 1.30 mum and a linewidth of 30 meV at room temperature. The proposed technique can be applied for the integration of microstructures into optoelectronic functional devices.

Low propagation loss of 0.76 dB/mm in GaAs-based single-line-defect two-dimensional photonic crystal slab waveguides up to 1 cm in length.

Straight single-line-defect photonic crystal (PC) waveguides on GaAs slabs with lengths of 1, 4, and 10 mm have been fabricated. By controlling the Al content of a sacrificial AlGaAs clad layer and the wet etching duration, a PC core layer with a very smooth surface was obtained. Atomic force microscope images indicate that the roughness on the top surface is less than 1 nm. An extremely low propagation loss of 0.76 dB/mm for the GaAs-based PC waveguide was achieved.

InAs quantum-dot laser utilizing GaAs photonic-crystal line-defect waveguide.

We have observed laser action from optically-pumped InAs-quantum-dots embedded in a line-defect waveguide in an air-bridge type GaAs-photonic-crystal slab (an array of air-holes). The lasing is found to occur without any optical cavity such as a set of Fabry-Perot mirrors. Comparison of the observed transmittance spectrum with the calculated band dispersion of the W3 defect-mode enables us to specify the lasing wavelength as that at the band edge. From this fact it follows that distributed feedback mechanism at the band edge with a vanishingly small group-velocity should be responsible for the present lasing. Usefulness of this kind of compact laser in a future ultrafast planar photonic integrated circuit is discussed.

Ultra-fast photonic crystal/quantum dot alloptical switch for future photonic networks.

We demonstrated a novel two-dimensional photonic crystal (PC) based Symmetric Mach Zehnder type all-optical switch (PC-SMZ) with InAs quantum dots (QDs) acting as a nonlinear phase-shift source. The 600- ?m-long PC-SMZ having integrated wavelength-selective PC-based directional couplers and other PC components exhibited a 15-ps-wide switching-window with 2-ps rise/fall time at a wavelength of 1.3 ?m. Nonlinear optical phase shift in the 500-?m-long straight PC waveguide was also achieved at sufficiently low optical-energy (e.g., ??phase shift at ~100-fJ control-pulse energy) due to the small saturation energy density of the QDs, which is enhanced in the PC waveguide, without using conventional measures such as SOAs with current-injected gain. The results pave the way to novel PC- and QD-based photonic integrated circuits including multiple PC-SMZs and other novel functional devices.