ABSTRACT
The interest in thermoelectrics (TE) for an electrical output power by converting any kind of heat has flourished in recent years, but questions about the efficiency at the ambient temperature and safety remain unanswered. With the possibility of integration in the technology of semiconductors based on silicon, highly harvested power density, abundant on earth, nontoxicity, and cost-efficiency, Si1-x-yGexSny ternary alloy film has been investigated to highlight its efficiency through ion implantation and high-temperature rapid thermal annealing (RTA) process. Significant improvement of the ambient-temperature TE performance has been achieved in a boron-implanted Si0.864Ge0.108Sn0.028 thin film after a short time RTA process at 1100 °C for 15 seconds, the power factor achieves to 11.3 µWcm-1 K-2 at room temperature. The introduction of Sn into Si1-xGex dose not only significantly improve the conductivity of Si1-xGex thermoelectric materials but also achieves a relatively high Seebeck coefficient at room temperature. This work manifests emerging opportunities for modulation Si integration thermoelectrics as wearable devices charger by body temperature.
ABSTRACT
We review the technology of Ge1-x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1-x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1-x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge1-x Sn x , and insulators/Ge1-x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1-x Sn x -related materials, as well as the reported performances of electronic devices using Ge1-x Sn x related materials.
