Dimension-Controlled Synthesis of Hybrid-Mixed Halide Perovskites for Solar Cell Application.

Despite the rapid improvement of photovoltaic (PV) efficiency in hybrid organic-inorganic metal halide perovskites (HOIPs), the fabrication procedure of a compact thin film in a large-area application is still a tedious work. Apart from the quality of the thin film, the stability of the perovskite materials and the expensive organic hole transport layer (HTL) within the HOIP-based PV device are the major issues that need to be addressed prior to their commercialization. Herein, a unique glass rod-based facile fabrication technique for producing a compact and stable thin film utilizing a mixed-halide-based perovskite precursor solution is demonstrated. The fabricated devices deliver high photoconversion efficiency (PCE) without the use of any HTL and show an excellent stability under ambient conditions. By varying the organic CH3NH3I (MAI) and inorganic PbBr2 content, perovskite materials with different dimensions, i.e., 3D, 2D, and 1D, are synthesized to produce an active layer for PV devices. Although a 2D single-halide perovskite is reported earlier, herein two different mixed-halide 2D perovskites, i.e., MA2PbI2Br2 and MAPb2IBr4, are synthesized successfully, and their performance is compared in detail along with that of 1D and 3D mixed-halide perovskites. The facile synthesized mixed-halide 2D-based MA2PbI2Br2 perovskite shows a PCE of 10.14% with a high stability of 92% after 100 days without encapsulation, which is much superior as compared to that of the mixed-halide 3D MAPbIBr2. The semiconducting behavior as well as the nature of the bandgap of the synthesized compounds is examined by pursuing density functional theory calculations. Specifically, the role of iodine doping to modify the electronic band structure is investigated, and introduction of iodine is found to reduce the effective masses of both electrons and holes in the perovskite material.

Localized thermal spike driven morphology and electronic structure transformation in swift heavy ion irradiated TiO2 nanorods.

Irradiation of materials by high energy (∼MeV) ions causes intense electronic excitations through inelastic transfer of energy that significantly modifies physicochemical properties. We report the effect of 100 MeV Ag ion irradiation and resultant localized (∼few nm) thermal spike on vertically oriented TiO2 nanorods (∼100 nm width) towards tailoring their structural and electronic properties. Rapid quenching of the thermal spike induced molten state within ∼0.5 picosecond results in a distortion in the crystalline structure that increases with increasing fluences (ions per cm2). Microstructural investigations reveal ion track formation along with a corrugated surface of the nanorods. The thermal spike simulation validates the experimental observation of the ion track dimension (∼10 nm diameter) and melting of the nanorods. The optical absorption study shows direct bandgap values of 3.11 eV (pristine) and 3.23 eV (5 × 1012 ions per cm2) and an indirect bandgap value of 3.10 eV for the highest fluence (5 × 1013 ions per cm2). First principles electronic structure calculations corroborate the direct-to-indirect transition that is attributed to the structural distortion at the highest fluence. This work presents a unique technique to selectively tune the properties of nanorods for versatile applications.