Room-Temperature Giant Charge-to-Spin Conversion at the SrTiO3-LaAlO3 Oxide Interface.

The two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e., spin-to-charge conversion) in the 2DEG layer is reported. However, the direct effect of charge-to-spin conversion, an essential ingredient for spintronic devices in a current-induced spin-orbit torque scheme, has not been demonstrated yet. Here we show, for the first time, a highly efficient spin generation with the efficiency of ∼6.3 in the STO/LAO/CoFeB structure at room temperature by using spin torque ferromagnetic resonance. In addition, we suggest that the spin transmission through the LAO layer at a high temperature range is attributed to the inelastic tunneling via localized states in the LAO band gap. Our findings may lead to potential applications in the oxide insulator based spintronic devices.

Spin-orbit-torque engineering via oxygen manipulation.

Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit torques, which are a more powerful tool for controlling magnetization and can enrich device functionalities. The engineering of spin-orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here, we report that the oxidation of spin-orbit-torque devices triggers a new mechanism of spin-orbit torque, which is about two times stronger than that based on the spin Hall effect. We thus introduce a way to engineer spin-orbit torques via oxygen manipulation. Combined with electrical gating of the oxygen level, our findings may also pave the way towards reconfigurable logic devices.

Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires.

Current induced spin-orbit effective magnetic fields in metal/ferromagnet/oxide trilayers provide a new way to manipulate the magnetization, which is an alternative to the conventional current induced spin transfer torque arising from noncollinear magnetization. Ta/CoFeB/MgO structures are expected to be useful for non-volatile memories and logic devices due to its perpendicular anisotropy and large current induced spin-orbit effective fields. However many aspects such as the angular and temperature dependent phenomena of the effective fields are little understood. Here, we evaluate the angular and temperature dependence of the current-induced spin-orbit effective fields considering contributions from both the anomalous and planar Hall effects. The longitudinal and transverse components of effective fields are found to have strong angular dependence on the magnetization direction at 300 K. The transverse field decreases significantly with decreasing temperature, whereas the longitudinal field shows weaker temperature dependence. Our results reveal important features and provide an opportunity for a more comprehensive understanding of current induced spin-orbit effective fields.

Spin-orbit torques in Co/Pd multilayer nanowires.

Current induced spin-orbit torques have been studied in ferromagnetic nanowires made of 20 nm thick Co/Pd multilayers with perpendicular magnetic anisotropy. Using Hall voltage and lock-in measurements, it is found that upon injection of an electric current both in-plane (Slonczewski-like) and perpendicular (fieldlike) torques build up in the nanowire. The torque efficiencies are found to be as large as 1.17 and 5 kOe at 10(8) A/cm2 for the in-plane and perpendicular components, respectively, which is surprisingly comparable to previous studies in ultrathin (∼1 nm) magnetic bilayers. We show that this result cannot be explained solely by spin Hall effect induced torque at the outer interfaces, indicating a probable contribution of the bulk of the Co/Pd multilayer.