Surface Capping Layer Prepared from the Bulky Tetradodecylammonium Bromide as an Efficient Perovskite Passivation Layer for High-Performance Perovskite Solar Cells.

The power conversion efficiency (PCE) of perovskite solar cells (PSCs) has increased and levels with silicon solar cells; however, their commercialization has not yet been realized because of their poor long-term stability. One of the primary causes of the instability of PSC devices is the large concentration of defects in the polycrystalline perovskite film. Such defects limit the device performance besides triggering hysteresis and device instability. In this study, tetradodecylammonium bromide (TDDAB) was used as a postsurface modifier to suppress the density of defects from the mixed perovskite film (CsFAMA). X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses validated that TDDAB binds to the mixed perovskite through hydrogen bonding. The X-ray diffraction (XRD) and two-dimensional grazing incidence wide-angle X-ray scattering (2D GIWAXS) study uncovered that the TDDAB modification formed a capping layer of (TDDA)2PbI1.66Br2.34 on the surface of the three-dimensional (3D) perovskite. The single charge transport device prepared from the TDDAB-modified perovskite film revealed that both the electron and hole defects were considerably repressed due to the modification. Consequently, the modified device displayed a champion PCE of 21.33%. The TDDAB surface treatment not only enhances the PCE but the bulky cation of the TDDAB also forms a hydrophobic capping surface (water contact angle of 93.39°) and safeguards the underlayer perovskite from moisture. As a result, the modified PSC has exhibited almost no performance loss after 30 days in air (RH ≈ 40%).

Universal Surface Passivation of Organic-Inorganic Halide Perovskite Films by Tetraoctylammonium Chloride for High-Performance and Stable Perovskite Solar Cells.

The power conversion efficiency (PCE) of perovskite solar cells has been showing rapid improvement in the last decade. However, still, there is an unarguable performance deficit compared with the Schockley-Queisser (SQ) limit. One of the major causes for such performance discrepancy is surface and grain boundary defects. They are a source of nonradiative recombination in the devices that not only causes performance loss but also instability of the solar cells. In this study, we employed a direct postsurface passivation strategy at mild temperatures to modify perovskite layer defects using tetraoctylammonium chloride (TOAC). The passivated perovskite layers have demonstrated extraordinary improvement in photoluminescence and charge carrier lifetimes compared to their control counterparts in both Cs0.05(FAPbI3)0.83(MAPbBr3)0.17 and MAPbI3-type perovskite layers. The investigation on electron-only and hole-only devices after TOAC treatment revealed suppressed electron and hole trap density of states. The electrochemical study demonstrated that TOAC treatment improved the charge recombination resistance of the perovskite layers and reduced the charge accumulation on the surface of perovskite films. As a result, perovskite solar cells prepared by TOAC treatment showed a champion PCE of 21.24% for the Cs0.05(FAPbI3)0.83(MAPbBr3)0.17-based device compared to 19.58% without passivation. Likewise, the PCE of MAPbI3 improved from 18.09 to 19.27% with TOAC treatment. The long-term stability of TOAC-passivated perovskite Cs0.05(FAPbI3)0.83(MAPbBr3)0.17 devices has retained over 97% of its initial performance after 720 h in air.

High broadband photoconductivity of few-layered MoS2 field-effect transistors measured using multi-terminal methods: effects of contact resistance.

Among the layered two dimensional semiconductors, molybdenum disulfide (MoS2) is considered to be an excellent candidate for applications in optoelectronics and integrated circuits due to its layer-dependent tunable bandgap in the visible region, high ON/OFF current ratio in field-effect transistors (FET) and strong light-matter interaction properties. In this study, using multi-terminal measurements, we report high broadband photocurrent response (R) and external quantum efficiency (EQE) of few-atomic layered MoS2 phototransistors fabricated on a SiO2 dielectric substrate and encapsulated with a thin transparent polymer film of Cytop. The photocurrent response was measured using a white light source as well as a monochromatic light of wavelength λ = 400 nm-900 nm. We measured responsivity using a 2-terminal configuration as high as R = 1 × 103 A W-1 under white light illumination with an optical power Popt = 0.02 nW. The R value increased to 3.5 × 103 A W-1 when measured using a 4-terminal configuration. Using monochromatic light on the same device, the measured values of R were 103 and 6 × 103 A W-1 under illumination of λ = 400 nm when measured using 2- and 4-terminal methods, respectively. The highest EQE values obtained using λ = 400 nm were 105% and 106% measured using 2- and 4-terminal configurations, respectively. The wavelength dependent responsivity decreased from 400 nm to the near-IR region at 900 nm. The observed photoresponse, photocurrent-dark current ratio (PDCR), detectivity as a function of applied gate voltage, optical power, contact resistances and wavelength were measured and are discussed in detail. The observed responsivity is also thoroughly studied as a function of contact resistance of the device.