Development of Nanostructured Bi2Te3 with High Thermoelectric Performance by Scalable Synthesis and Microstructure Manipulations.

Nanostructuring of thermoelectric (TE) materials leads to improved energy conversion performance; however, it requires a perfect fit between the nanoprecipitates' chemistry and crystal structure and those of the matrix. We synthesize bulk Bi2Te3 from molecular precursors and characterize their structure and chemistry using electron microscopy and analyze their TE transport properties in the range of 300-500 K. We find that synthesis from Bi2O3 + Na2TeO3 precursors results in n-type Bi2Te3 containing a high number density (Nv ∼ 2.45 × 1023 m-3) of Te-nanoprecipitates decorating the Bi2Te3 grain boundaries (GBs), which yield enhanced TE performance with a power factor (PF) of ∼19 µW cm-1 K-2 at 300 K. First-principles calculations validate the role of Te/Bi2Te3 interfaces in increasing the charge carrier concentration, density of states, and electrical conductivity. These optimized TE coefficients yield a promising TE figure of merit (zT) peak value of 1.30 at 450 K and an average zT of 1.14 from 300 to 500 K. This is one of the cutting-edge zT values recorded for n-type Bi2Te3 produced by chemical routes. We believe that this chemical synthesis strategy will be beneficial for future development of scalable n-type Bi2Te3 based devices.

Topologically-Enhanced Thermoelectric Properties in Bi2Te3-Based Compounds: Effects of Grain Size and Misorientation.

Topological insulators (TIs) and thermoelectric (TE) materials seem to belong to distinct physical realms; however, in practice, they both share common characteristics. Introducing concepts from TIs into TE materials to enhance their performance and achieve better understanding of electronic transport requires extensive research. Particularly, grain size, misorientation, and grain boundary (GB) character are of utmost importance to attain effective charge carrier transport in TE polycrystals; these factors, however, have not been thoroughly explored. Herein, we investigate the correlation between grain size, misorientation, and lattice strain in Bi2Te3 and its TI signature, aiming to improve its TE performance. We reveal an unusual behavior showing that electron mobility increases upon the increase of grain size, reaching at a maximum value of 495 cm2/V·s for an optimum grain size of 600 nm and most-frequent GB misorientation angle of 60° and then decreases with increasing grain size. It is also indicated that the combined effects of grain size reduction and point defects induce lattice strain in the Bi2Te3-matrix that is essential to trigger the TI contribution to TE transport. This trend is corroborated by first-principles calculations showing that compressive strains form multiple valleys in the valence band and opens the TI band gap. Such a combination of physical phenomena in a well-known TE material is unique and can promote our understanding of the nature of TE transport with implications for TE energy conversion.

Effects of Co-doping and Microstructure on Charge Carrier Energy Filtering in Thermoelectric Titanium-Doped Zinc Aluminum Oxide.

ZnO is a promising thermoelectric (TE) material for high-temperature applications; however, its TE performance is limited by strong coupling between electrical and thermal transport. In this study, we synthesized Al and Ti co-doped ZnO by a solid-state reaction and air sintering at 1500 °C and analyzed the microstructure to establish its correlation with TE properties. The TE transport properties were measured between room temperature and 800 °C, and electronic properties were calculated from first principles calculations. Herein, we introduced second and third phases into a ZnO-based matrix to enhance its power factor (PF) by charge carrier energy filtering by applying co-doping with Al and Ti. Although multiphase materials usually do not exhibit high PF, in this study, it is observed that three-phase ZnO-based materials exhibit higher PF values compared to the two-phase materials. We observed unusual behavior, in which the Seebeck coefficient (S ) and electrical conductivity (σ) values increased simultaneously with temperature for Zn1-x-yAlxTiyO, originating from energy filtering of charge carriers due to both co-doping and the peculiar multiphase structure. High σ values were associated with the increase of electron concentration, while high S values were due to Fermi energy tuning and heavier effective masses initiated by Al and Ti co-doping. Besides increasing the PF, the multiphase structure played an essential role in reducing lattice thermal conductivity due to phonon scattering by the Umklapp, point defect, and second-phase mechanisms. Our approach yielded an increase of the TE figure of merit upon formation of a three-phase 2 wt % Ti-doped Zn0.98Al0.02O compound of ca. 10 times compared to the corresponding value attained for its two-phase ZnAl0.02O counterpart.

Enhanced Charge Transport in Ca2MnO4-Layered Perovskites by Point Defect Engineering.

Coupling between thermal and charge transport in crystalline materials has always been one of the greatest challenges in understanding the underlying physics of thermoelectric materials. In this sense, CaO(CaMnO3)m Ruddlesden-Popper layered perovskites, comprising m perovskite subcells separated by CaO planes, exhibit intriguing thermal and electronic transport properties that can be tuned by altering their crystal periodicities. Applying the well-established phonon glass electron crystal (PGEC) concept enables us to increase the transparency of these CaO planes to electron transport at the same time while preserving their opacity to phonon transport. First-principles calculations indicate that the total local potential at CaO planes, where Y substitutes for Ca, is lower by ca. 50% compared to La substitution. Measurements of the electrical conductivity and Seebeck coefficients for Ca2-xRxMnO4 (R = La or Y; x = 0.01, 0.05, 0.1, and 0.15) bulk materials in the range of 300-1000 K confirm that compounds doped with Y exhibit higher electrical conductivity values than their La-doped counterparts. We attribute this to lower polaron hopping energy values (up to 23%) evaluated using the small polaron hopping model. This study introduces an original way to employ the PGEC approach for thermoelectric oxides.