ABSTRACT
Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory. Induced changes of the crystalline and microscopic structure have to be considered as they are directly related to the memory states and failure mechanisms of the emerging memory technologies. Therefore, we present heavy ion irradiation-induced effects in emerging memories based on different memory materials, in particular, HfO2-, HfZrO2-, as well as GeSbTe-based thin films. This study reveals that the initial crystallinity, composition, and microstructure of the memory materials have a fundamental influence on their interaction with Au swift heavy ions. With this, we provide a test protocol for irradiation experiments of hafnium oxide- and GeSbTe-based emerging memories, combining structural investigations by X-ray diffraction on a macroscopic, scanning transmission electron microscopy on a microscopic scale, and electrical characterization of real devices. Such fundamental studies can be also of importance for future applications, considering the transition of digital to analog memories with a multitude of resistance states.
ABSTRACT
Electron tomography is widely employed for the 3D morphological characterization at the nanoscale. In recent years, there has been a growing interest in analytical electron tomography (AET) as it is capable of providing 3D information about the elemental composition, chemical bonding and optical/electronic properties of nanomaterials. AET requires advanced reconstruction algorithms as the datasets often consist of a very limited number of projections. Total variation (TV)-based compressed sensing approaches were shown to provide high-quality reconstructions from undersampled datasets, but staircasing artefacts can appear when the assumption about piecewise constancy does not hold. In this paper, we compare higher-order TV and wavelet-based approaches for AET applications and provide an open-source Python toolbox, Pyetomo, containing 2D and 3D implementations of both methods. A highly sampled STEM-HAADF dataset of an Er-doped porous Si sample and a heavily undersampled STEM-EELS dataset of a Ge-rich GeSbTe (GST) thin film annealed at 450°C are used to evaluate the performance of the different approaches. We show that polynomial annihilation with order 3 (HOTV3) and the Bior4.4 wavelet outperform the classical TV minimization and the related Haar wavelet.
ABSTRACT
Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved because of the successful 3D integration of so-called OTS selector devices with innovative phase-change memories, both based on chalcogenide materials. This paves the way for storage class memories as well as neuromorphic circuits. We elucidate the mechanism behind OTS switching by new state-of-the-art materials using electrical, optical, and x-ray absorption experiments, as well as ab initio molecular dynamics simulations. The model explaining the switching mechanism occurring in amorphous OTS materials under electric field involves the metastable formation of newly introduced metavalent bonds. This model opens the way for design of improved OTS materials and for future types of applications such as brain-inspired computing.
