Active charge state control of single NV centres in diamond by in-plane Al-Schottky junctions.

In this paper, we demonstrate an active control of the charge state of a single nitrogen-vacancy (NV) centre by using in-plane Schottky-diode geometries with aluminium on hydrogen-terminated diamond surface. A switching between NV(+), NV(0) and NV(-) can be performed with the Al-gates which apply electric fields in the hole depletion region of the Schottky junction that induces a band bending modulation, thereby shifting the Fermi-level over NV charge transition levels. We simulated the in-plane band structure of the Schottky junction with the Software ATLAS by solving the drift-diffusion model and the Poisson-equation self-consistently. We simulated the IV-characteristics, calculated the width of the hole depletion region, the position of the Fermi-level intersection with the NV charge transition levels for different reverse bias voltages applied on the Al-gate. We can show that the field-induced band bending modulation in the depletion region causes a shifting of the Fermi-level over NV charge transition levels in such a way that the charge state of a single NV centre and thus its electrical and optical properties is tuned. In addition, the NV centre should be approx. 1-2 µm away from the Al-edge in order to be switched with moderate bias voltages.

Waferscale nanophotonic circuits made from diamond-on-insulator substrates.

Wide bandgap dielectrics are attractive materials for the fabrication of photonic devices because they allow broadband optical operation and do not suffer from free-carrier absorption. Here we show that polycrystalline diamond thin films deposited by chemical vapor deposition provide a promising platform for the realization of large scale integrated photonic circuits. We present a full suite of photonic components required for the investigation of on-chip devices, including input grating couplers, millimeter long nanophotonic waveguides and microcavities. In microring resonators we measure loaded optical quality factors up to 11,000. Corresponding propagation loss of 5 dB/mm is also confirmed by measuring transmission through long waveguides.

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.

Isotopic homojunction band engineering from diamond.

Confinement of charge carriers in semiconductors by quantum wells is usually accomplished with layers that vary in elemental composition, such as aluminum gallium arsenide and gallium arsenide. We fabricated diamond superlattices by creating multilayer structures of isotopically pure carbon isotopes carbon-12 (12C) and carbon-13 (13C), which confine electrons by a difference in band-gap energy of 17 millielectron volts. Cathodoluminescence experiments performed at 80 kelvin showed that excitonic recombination in the higher-energy band of 13C vanishes in favor of increased recombination in the lower-energy 12C material. Carrier confinement was achieved in diamond superlattices made up of both thinner (30 nanometers) and thicker (up to 350 nanometers) layers.

Defining the human hippocampus in cerebral magnetic resonance images--an overview of current segmentation protocols.

Due to its crucial role for memory processes and its relevance in neurological and psychiatric disorders, the hippocampus has been the focus of neuroimaging research for several decades. In vivo measurement of human hippocampal volume and shape with magnetic resonance imaging has become an important element of neuroimaging research. Nevertheless, volumetric findings are still inconsistent and controversial for many psychiatric conditions including affective disorders. Here we review the wealth of anatomical protocols for the delineation of the hippocampus in MR images, taking into consideration 71 different published protocols from the neuroimaging literature, with an emphasis on studies of affective disorders. We identified large variations between protocols in five major areas. 1) The inclusion/exclusion of hippocampal white matter (alveus and fimbria), 2) the definition of the anterior hippocampal-amygdala border, 3) the definition of the posterior border and the extent to which the hippocampal tail is included, 4) the definition of the inferior medial border of the hippocampus, and 5) the use of varying arbitrary lines. These are major sources of variance between different protocols. In contrast, the definitions of the lateral, superior, and inferior borders are less disputed. Directing resources to replication studies that incorporate characteristics of the segmentation protocols presented herein may help resolve seemingly contradictory volumetric results between prior neuroimaging studies and facilitate the appropriate selection of protocols for manual or automated delineation of the hippocampus for future research purposes.

Molecular characterisation of prolactin and analysis of extrapituitary expression in the European sea bass Dicentrarchus labrax under various salinity conditions.

Although prolactin has been demonstrated to be the main hormone involved in adaptation to dilute media in several freshwater teleosts, few studies have been conducted in marine teleosts. In the Mediterranean, the sea bass Dicentrarchus labrax inhabits environments ranging from the open sea to coastal lagoons, where salinity varies greatly. We characterised the prolactin (prl) gene and analysed its expression in two organs (gill and intestine) in D. labrax acclimated to either freshwater or seawater. A 2819 bp long sequence encompassing the prl gene and a part (282 bp) of the promoter were identified, and these comprised 5 coding exons separated by 4 introns. Prolactin was similarly expressed in fresh- and seawater adapted fish, although expression in gills was significantly greater than in the intestine. Nonetheless, individuals unable to successfully regulate osmotic balance in freshwater presented overall low expression rates. Results are discussed according to the mechanism of sea bass adaptation in the wild and to their life cycle between open sea and lagoons. Finally, a phylogenetic analysis indicated that teleosts are not branched according to their life-history features (e.g. seawater vs. freshwater habitats), and no signature of positive selection was detected across the phylogeny of the prl gene in teleosts.

Alkene/diamond liquid/solid interface characterization using internal photoemission spectroscopy.

The photochemical attachment of 10-amino-dec-1-ene molecules protected with a trifluoroacetic acid group (TFAAD) on hydrogen-terminated single-crystalline chemical vapor deposited (CVD) diamond is characterized by total photoyield spectroscopy (TPYS), conductivity, Hall-effect, spectrally resolved photoconductivity (SPC), optical transmission experiments, and, for the first time, by in situ internal photoemission (IPE) spectroscopy applied in the spectral regime from 4 to 6 eV on the alkene/diamond (liquid/solid) heterostructures. These experiments are performed on undoped, (100) oriented, single-crystalline CVD diamond films, which contain no grain boundaries and have negligible bulk and surface defect densities. X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical bonding of alkene molecules to diamond. The spectroscopic set of data shows that the photochemical reaction window of H-terminated diamond is shifted below the optical gap of diamond because of the negative electron affinity. In situ IPE experiments reveal electron emission between 4.5 and 5.2 eV. A model is introduced and discussed in which valence-band electrons are optically excited into empty hydrogen-induced surface states of diamond from where they tunnel into empty pi states of alkene molecules. We theoretically discuss the fastest attachment time to achieve a saturated TFAAD layer of about 2 x 10(14) cm(-)(2) on diamond, which is experimentally detected to be 7 h. In the case of direct optical electron excitations from diamond, the bonding efficiency will be one TFAAD molecule attachment arising from about 1600 emitted electrons.