ABSTRACT
This work investigates the vibrational power that may potentially be delivered by electron-emitted phonons at the terminals of a device with a 1D material as the active channel. Electrons in a 1D material traversing a device excite phase-limited acoustic and optical phonon modes as they undergo streaming motion. At ultra-low temperature (4 K in this study, for example), in the near absence of background phonon activity, the emitted traveling phonons may potentially be collected at the terminals before they decay. Detecting those phonons is akin to hearing electrons within the device. Results here show that traveling acoustic phonons can deliver up to a fraction of a nW of vibrational power at the terminals, which is within the sensitivity range of modern instruments. The total vibrational power from traveling optical and acoustic phonons is found to be in order of nW. In this work, Ensemble Monte Carlo (EMC) simulations are used to model the behavior of a gate-all-around (GAA) field-effect transistor (FET), with a single-wall semiconducting carbon nanotube (SWCNT) as the active channel, and a free-hanging SWCNT between two contacts. Electronic band structure of the SWCNT is calculated within the framework of a tight-binding (TB) model. The principal scattering mechanisms are due to electron-phonon interactions using 1st order perturbation theory. A continuum model is used to determine the longitudinal acoustic (LA) and optical (LO) phonons, and a single lowest radial breathing mode (RBM) phonon is considered.
ABSTRACT
Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy subbands. This effect was observed in semiconductors like GaAs which has a direct bandgap of very low effective mass and an indirect subband of high effective mass which lies ~300 meV above the former. In contrast to GaAs, bulk silicon has a very high energy spacing (~1 eV) which renders the initiation of transfer-induced NDR unobservable. Using Density Functional Theory (DFT), semi-empirical 10 orbital (sp3d5s*) Tight Binding and Ensemble Monte Carlo (EMC) methods we show for the first time that (a) Gunn Effect can be induced in silicon nanowires (SiNW) with diameters of 3.1 nm under +3% strain and an electric field of 5000 V/cm, (b) the onset of NDR in the I-V characteristics is reversibly adjustable by strain and (c) strain modulates the resistivity by a factor 2.3 for SiNWs of normal I-V characteristics i.e. those without NDR. These observations are promising for applications of SiNWs in electromechanical sensors and adjustable microwave oscillators. It is noteworthy that the observed NDC is different in principle from Esaki-Diode and Resonant Tunneling Diodes (RTD) in which NDR originates from tunneling effect.
ABSTRACT
Semiconducting nanowire (NW) devices have garnered attention in self-powered electronic and optoelectronic applications. This work explores and exhibits, for the first time for visible light, clear evidence of the zero-biased optoelectronic switching in randomly dispersed Ge and Si NW networks. The test bench, on which the NWs were dispersed for optoelectronic characterization, was fabricated using a standard CMOS fabrication process, and utilized metal contacts with dissimilar work functions-Al and Ni. The randomly dispersed NWs respond to light by exhibiting substantial photocurrents and, most remarkably, demonstrate zero-bias photo-switching. The magnitude of the photocurrent is dependent on the NW material, as well as the channel length. The photocurrent in randomly dispersed GeNWs was found to be higher by orders of magnitude compared to SiNWs. In both of these material systems, when the length of the NWs was comparable to the channel length, the currents in sparse NW networks were found to be higher than those in dense NW networks, which can be explained by considering various possible arrangements of NWs in these devices.
