Optimized Planar Microwave Antenna for Nitrogen Vacancy Center Based Sensing Applications.

Individual nitrogen vacancy (NV) color centers in diamond are versatile, spin-based quantum sensors. Coherently controlling the spin of NV centers using microwaves in a typical frequency range between 2.5 and 3.5 GHz is necessary for sensing applications. In this work, we present a stripline-based, planar, Ω-shaped microwave antenna that enables one to reliably manipulate NV spins. We found an optimal antenna design using finite integral simulations. We fabricated our antennas on low-cost, transparent glass substrate. We created highly uniform microwave fields in areas of roughly 400 × 400 µm2 while realizing high Rabi frequencies of up to 10 MHz in an ensemble of NV centers.

Recent Advances in Single Crystal Diamond Device Fabrication for Photonics, Sensing and Nanomechanics.

In the last two decades, the use of diamond as a material for applications in nanophotonics, optomechanics, quantum information, and sensors tremendously increased due to its outstanding mechanical properties, wide optical transparency, and biocompatibility. This has been possible owing to advances in methods for growth of high-quality single crystal diamond (SCD), nanofabrication methods and controlled incorporation of optically active point defects (e.g., nitrogen vacancy centers) in SCD. This paper reviews the recent advances in SCD nano-structuring methods for realization of micro- and nano-structures. Novel fabrication methods are discussed and the different nano-structures realized for a wide range of applications are summarized. Moreover, the methods for color center incorporation in SCD and surface treatment methods to enhance their properties are described. Challenges in the upscaling of SCD nano-structure fabrication, their commercial applications and future prospects are discussed.

Reliable Nanofabrication of Single-Crystal Diamond Photonic Nanostructures for Nanoscale Sensing.

In this manuscript, we outline a reliable procedure to manufacture photonic nanostructures from single-crystal diamond (SCD). Photonic nanostructures, in our case SCD nanopillars on thin (<1 µ m) platforms, are highly relevant for nanoscale sensing. The presented top-down procedure includes electron beam lithography (EBL) as well as reactive ion etching (RIE). Our method introduces a novel type of inter-layer, namely silicon, that significantly enhances the adhesion of hydrogen silsesquioxane (HSQ) electron beam resist to SCD and avoids sample charging during EBL. In contrast to previously used adhesion layers, our silicon layer can be removed using a highly-selective RIE step, which is not damaging HSQ mask structures. We thus refine published nanofabrication processes to ease a higher process reliability especially in the light of the advancing commercialization of SCD sensor devices.

Advanced Fabrication of Single-Crystal Diamond Membranes for Quantum Technologies.

Many promising applications of single crystal diamond and its color centers as sensor platform and in photonics require free-standing membranes with a thickness ranging from several micrometers to the few 100 nm range. In this work, we present an approach to conveniently fabricate such thin membranes with up to about one millimeter in size. We use commercially available diamond plates (thickness 50 µ m) in an inductively coupled reactive ion etching process which is based on argon, oxygen and SF 6 . We thus avoid using toxic, corrosive feed gases and add an alternative to previously presented recipes involving chlorine-based etching steps. Our membranes are smooth (RMS roughness <1 nm) and show moderate thickness variation (central part: <1 µ m over ≈200 × 200 µ m 2 ). Due to an improved etch mask geometry, our membranes stay reliably attached to the diamond plate in our chlorine-based as well as SF 6 -based processes. Our results thus open the route towards higher reliability in diamond device fabrication and up-scaling.

Fabrication of all diamond scanning probes for nanoscale magnetometry.

The electronic spin of the nitrogen vacancy (NV) center in diamond forms an atomically sized, highly sensitive sensor for magnetic fields. To harness the full potential of individual NV centers for sensing with high sensitivity and nanoscale spatial resolution, NV centers have to be incorporated into scanning probe structures enabling controlled scanning in close proximity to the sample surface. Here, we present an optimized procedure to fabricate single-crystal, all-diamond scanning probes starting from commercially available diamond and show a highly efficient and robust approach for integrating these devices in a generic atomic force microscope. Our scanning probes consisting of a scanning nanopillar (200 nm diameter, 1-2 µm length) on a thin (<1 µm) cantilever structure enable efficient light extraction from diamond in combination with a high magnetic field sensitivity (ηAC≈50±20nT/Hz). As a first application of our scanning probes, we image the magnetic stray field of a single Ni nanorod. We show that this stray field can be approximated by a single dipole and estimate the NV-to-sample distance to a few tens of nanometer, which sets the achievable resolution of our scanning probes.

Stokes-anti-Stokes correlations in diamond.

We investigate the arrival statistics of Stokes (S) and anti-Stokes (aS) Raman photons generated in thin diamond crystals. Strong quantum correlations between the S and aS signals are observed, which implies that the two processes share the same phonon; that is, the phonon excited in the S process is consumed in the aS process. We show that the intensity cross-correlation g(S,aS)(2)(0), which describes the simultaneous detection of Stokes and anti-Stokes photons, increases steadily with decreasing laser power and saturates at very low pump powers, implying that the number of Stokes-induced aS photons is comparable to the number of spontaneously generated aS photons. Furthermore, the coincidence rate shows a quadratic plus cubic power dependence, indicating the generation of multiple S photons per pulse at high powers.

Optical-phonon resonances with saddle-point excitons in twisted-bilayer graphene.

Twisted-bilayer graphene (tBLG) exhibits van Hove singularities in the density of states that can be tuned by changing the twisting angle θ. A θ-defined tBLG has been produced and characterized with optical reflectivity and resonance Raman scattering. The θ-engineered optical response is shown to be consistent with persistent saddle-point excitons. Separate resonances with Stokes and anti-Stokes Raman scattering components can be achieved due to the sharpness of the two-dimensional saddle-point excitons, similar to what has been previously observed for one-dimensional carbon nanotubes. The excitation power dependence for the Stokes and anti-Stokes emissions indicate that the two processes are correlated and that they share the same phonon.

Optical signatures of silicon-vacancy spins in diamond.

Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to date. Recently, this toolbox has expanded to include novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with highly desirable photonic properties. The challenge for utilizing this centre is to realize the hitherto elusive optical access to its electronic spin. Here we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. Our measurements reveal a spin-state purity approaching unity in the excited state, highlighting the potential of the centre as an efficient spin-photon quantum interface.

Photophysics of single silicon vacancy centers in diamond: implications for single photon emission.

Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers.

One- and two-dimensional photonic crystal microcavities in single crystal diamond.

Diamond is an attractive material for photonic quantum technologies because its colour centres have a number of outstanding properties, including bright single photon emission and long spin coherence times. To take advantage of these properties it is favourable to directly fabricate optical microcavities in high-quality diamond samples. Such microcavities could be used to control the photons emitted by the colour centres or to couple widely separated spins. Here, we present a method for the fabrication of one- and two-dimensional photonic crystal microcavities with quality factors of up to 700 in single crystal diamond. Using a post-processing etching technique, we tune the cavity modes into resonance with the zero phonon line of an ensemble of silicon-vacancy colour centres, and we measure an intensity enhancement factor of 2.8. The controlled coupling of colour centres to photonic crystal microcavities could pave the way to larger-scale photonic quantum devices based on single crystal diamond.

Design of photonic crystal microcavities in diamond films.

We design photonic crystal microcavities in diamond films for applications in quantum information. Optimization of the cavity design by "gentle confinement" yields a high quality factor Q>66000 and small mode volume V approximately 1.1( l/n)(3). In view of experimental applications we consider the influence of material absorption on the cavity Q factors and present a simple interpretation in the framework of a one-dimensional cavity model.