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1.

Yi G; Neumark GF.

Phys Rev B Condens Matter ; 48(23): 17043-17045, 1993 Dec 15.

Article in English | MEDLINE | ID: mdl-10008306

2.

Van de Walle CG; Laks DB; Neumark GF; Pantelides ST.

Phys Rev B Condens Matter ; 47(15): 9425-9434, 1993 Apr 15.

Article in English | MEDLINE | ID: mdl-10005009

3.

Native defects and self-compensation in ZnSe.

Laks DB; Van de Walle CG; Neumark GF; Blöchl PE; Pantelides ST.

Phys Rev B Condens Matter ; 45(19): 10965-10978, 1992 May 15.

Article in English | MEDLINE | ID: mdl-10001018

4.

Role of native defects in wide-band-gap semiconductors.

Laks DB; Van de Walle CG; Neumark GF; Pantelides ST.

Phys Rev Lett ; 66(5): 648-651, 1991 Feb 04.

Article in English | MEDLINE | ID: mdl-10043863

5.

Accurate interband-Auger-recombination rates in silicon.

Laks DB; Neumark GF; Pantelides ST.

Phys Rev B Condens Matter ; 42(8): 5176-5185, 1990 Sep 15.

Article in English | MEDLINE | ID: mdl-9996081

6.

Chou CJ; Neumark GF.

Phys Rev B Condens Matter ; 39(15): 10858-10860, 1989 May 15.

Article in English | MEDLINE | ID: mdl-9947895

7.

Neumark GF.

Phys Rev Lett ; 62(15): 1800-1803, 1989 Apr 10.

Article in English | MEDLINE | ID: mdl-10039771

8.

Theory of interband Auger recombination in n-type silicon.

Laks DB; Neumark GF; Hangleiter A; Pantelides ST.

Phys Rev Lett ; 61(10): 1229-1232, 1988 Sep 05.

Article in English | MEDLINE | ID: mdl-10038735

9.

Neumark GF.

Phys Rev B Condens Matter ; 37(9): 4778-4780, 1988 Mar 15.

Article in English | MEDLINE | ID: mdl-9945142