Temperature dependence of the dielectric function and critical points of monolayer WSe2.

Monolayer materials typically display intriguing temperature-dependent dielectric and optical properties, which are crucial for improving the structure and functionality of associated devices. Due to its unique photoelectric capabilities, monolayer WSe2 has recently received a lot of attention in the fields of atomically thin electronics and optoelectronics. In this work, we focus on the evolution of the temperature-dependent dielectric function (ε = ε1 + i ε2) of monolayer WSe2 over energies from 0.74 to 6.40 eV and temperatures from 40 to 350 K. We analyze the second derivatives of ε with respect to energy to accurately locate the critical points (CP). The dependence of the observed CP energies on temperature is consistent with the alternative domination of the declining exciton binding energy as the temperature increases.

A Systematic Study of the Temperature Dependence of the Dielectric Function of GaSe Uniaxial Crystals from 27 to 300 K.

We report the temperature dependences of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of the uniaxial crystal GaSe in the spectral energy region from 0.74 to 6.42 eV and at temperatures from 27 to 300 K using spectroscopic ellipsometry. The fundamental bandgap and strong exciton effect near 2.1 eV are detected only in the c-direction, which is perpendicular to the cleavage plane of the crystal. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that incorporates the Bose-Einstein statistical factor and the temperature coefficient to describe the electron-phonon interaction. To determine the origin of this anisotropy, we perform first-principles calculations using the mBJ method for bandgap correction. The results clearly demonstrate that the anisotropic dielectric characteristics can be directly attributed to the inherent anisotropy of p orbitals. More specifically, this prominent excitonic feature and fundamental bandgap are derived from the band-to-band transition between s and pz orbitals at the Γ-point.

Temperature dependence of the dielectric function and critical points of α-SnS from 27 to 350 K.

We report the temperature dependence of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of biaxial α-SnS in the spectral energy region from 0.74 to 6.42 eV and temperatures from 27 to 350 K using spectroscopic ellipsometry. Bulk SnS was grown by temperature gradient method. Dielectric response functions were obtained using multilayer calculations to remove artifacts due to surface roughness. We observe sharpening and blue-shifting of CPs with decreasing temperature. A strong exciton effect is detected only in the armchair direction at low temperature. New CPs are observed at low temperature that cannot be detected at room temperature. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose-Einstein statistical factor and the temperature coefficient for describing the electron-phonon interaction.

Parameterized optical properties of InxAl1-xP alloys.

We report values of parametric-model (PM) parameters that can be used to obtain dielectric functions (refractive indices) from 1.5 to 6.0 eV for ${{\rm In}_x}{{\rm Al}_{1 - x}}{\rm P}$InxAl1-xP alloys of arbitrary compositions $x$x. Using reported pseudo-dielectric data for several In compositions, we extract their dielectric functions by multilayer calculations, then parameterize them with PM lineshapes that well describe the asymmetric nature of their critical point (CP) contributions. We follow the ${E_0}$E0 fundamental bandgap as a function of $x$x, and determine the composition of the indirect-to-direct crossover.

A Parametric Model for Temperature Dependence of Dielectric Function of AlSb Film.

We present analytic representation of dielectric function (ɛ ═ ɛ1 + iɛ2) data from 1.7 to 5.0 eV for the temperature from 300 to 803 K of oxide-free AlSb that are the closest representation to date of the intrinsic bulk dielectric response ɛ of the material. Pseudodielectric functions 'ɛ' were measured on a 1.5 µm thick film grown on (001) GaAs by molecular beam epitaxy. Data were obtained with the film in situ to avoid surface oxidation artifacts. The dielectric function parametric model and multilayer calculation were performed to obtain pure dielectric function and fundamental bandgap (E0) of the AlSb film. The ɛ spectrum was successfully reconstructed by seven polynomials and a pole, which can be used to determine ɛ for arbitrary temperatures. Our results should be useful for device design based on AlSb.