All-Electrical 9-Bit Skyrmion-Based Racetrack Memory Designed with Laser Irradiation.

Racetrack memories with magnetic skyrmions have recently been proposed as a promising storage technology. To be appealing, several challenges must still be faced for the deterministic generation of skyrmions, their high-fidelity transfer, and accurate reading. Here, we realize the first proof-of-concept of a 9-bit skyrmion racetrack memory with all-electrical controllable functionalities implemented in the same device. The key ingredient is the generation of a tailored nonuniform distribution of magnetic anisotropy via laser irradiation in order to (i) create a well-defined skyrmion nucleation center, (ii) define the memory cells hosting the information coded as the presence/absence of skyrmions, and (iii) improve the signal-to-noise ratio of anomalous Hall resistance measurements. This work introduces a strategy to unify previous findings and predictions for the development of a generation of racetrack memories with robust control of skyrmion nucleation and position, as well as effective skyrmion electrical detection.

Comprehensive Study of the Current-Induced Spin-Orbit Torque Perpendicular Effective Field in Asymmetric Multilayers.

The spin-orbit torques (SOTs) in the heavy metal (HM)/ferromagnetic metal (FM) structure hold promise for next-generation low-power and high-density spintronic memory and logic applications. For the SOT switching of a perpendicular magnetization, an external magnetic field is inevitable for breaking the mirror symmetry, which is not practical for high-density nanoelectronics applications. In this work, we study the current-induced field-free SOT switching and SOT perpendicular effective field (Hzeff) in a variety of laterally asymmetric multilayers, where the asymmetry is introduced by growing the FM layer in a wedge shape. We show that the design of structural asymmetry by wedging the FM layer is a universal scheme for realizing field-free SOT switching. Moreover, by comparing the FM layer thickness dependence of (Hzeff) in different samples, we show that the efficiency (ß =Hzeff/J, J is the current density) is sensitive to the HM/FM interface and the FM layer thickness. The sign of ß for thin FM thicknesses is related to the spin Hall angle (θSH) of the HM layer attached to the FM layer. ß changes its sign with the thickness of the FM layer increasing, which may be caused by the thickness dependence of the work function of FM. These results show the possibility of engineering the deterministic field-free switching by combining the symmetry breaking and the materials design of the HM/FM interface.