Deep random forest with ferroelectric analog content addressable memory.

Deep random forest (DRF), which combines deep learning and random forest, exhibits comparable accuracy, interpretability, low memory and computational overhead to deep neural networks (DNNs) in edge intelligence tasks. However, efficient DRF accelerator is lagging behind its DNN counterparts. The key to DRF acceleration lies in realizing the branch-split operation at decision nodes. In this work, we propose implementing DRF through associative searches realized with ferroelectric analog content addressable memory (ACAM). Utilizing only two ferroelectric field effect transistors (FeFETs), the ultra-compact ACAM cell performs energy-efficient branch-split operations by storing decision boundaries as analog polarization states in FeFETs. The DRF accelerator architecture and its model mapping to ACAM arrays are presented. The functionality, characteristics, and scalability of the FeFET ACAM DRF and its robustness against FeFET device non-idealities are validated in experiments and simulations. Evaluations show that the FeFET ACAM DRF accelerator achieves ∼106×/10× and ∼106×/2.5× improvements in energy and latency, respectively, compared to other DRF hardware implementations on state-of-the-art CPU/ReRAM.

Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing.

Hyperdimensional computing (HDC) is a brain-inspired computational framework that relies on long hypervectors (HVs) for learning. In HDC, computational operations consist of simple manipulations of hypervectors and can be incredibly memory-intensive. In-memory computing (IMC) can greatly improve the efficiency of HDC by reducing data movement in the system. Most existing IMC implementations of HDC are limited to binary precision which inhibits the ability to match software-equivalent accuracies. Moreover, memory arrays used in IMC are restricted in size and cannot immediately support the direct associative search of large binary HVs (a ubiquitous operation, often over 10,000+ dimensions) required to achieve acceptable accuracies. We present a multi-bit IMC system for HDC using ferroelectric field-effect transistors (FeFETs) that simultaneously achieves software-equivalent-accuracies, reduces the dimensionality of the HDC system, and improves energy consumption by 826x and latency by 30x when compared to a GPU baseline. Furthermore, for the first time, we experimentally demonstrate multi-bit, array-level content-addressable memory (CAM) operations with FeFETs. We also present a scalable and efficient architecture based on CAMs which supports the associative search of large HVs. Furthermore, we study the effects of device, circuit, and architectural-level non-idealities on application-level accuracy with HDC.

Experimentally validated memristive memory augmented neural network with efficient hashing and similarity search.

Lifelong on-device learning is a key challenge for machine intelligence, and this requires learning from few, often single, samples. Memory-augmented neural networks have been proposed to achieve the goal, but the memory module must be stored in off-chip memory, heavily limiting the practical use. In this work, we experimentally validated that all different structures in the memory-augmented neural network can be implemented in a fully integrated memristive crossbar platform with an accuracy that closely matches digital hardware. The successful demonstration is supported by implementing new functions in crossbars, including the crossbar-based content-addressable memory and locality sensitive hashing exploiting the intrinsic stochasticity of memristor devices. Simulations show that such an implementation can be efficiently scaled up for one-shot learning on more complex tasks. The successful demonstration paves the way for practical on-device lifelong learning and opens possibilities for novel attention-based algorithms that were not possible in conventional hardware.