Water-bath assisted convective assembly of aligned silver nanowire films for transparent electrodes.

Manipulating Ag nanowire (AgNW) assembly to tailor the opto-electrical properties and surface morphology could improve the performance of next-generation transparent conductive electrodes. In this paper, we demonstrated a water-bath assisted convective assembly process at the temporary water/alcohol interface for fabricating hierarchical aligned AgNW electrodes. The convection flow plays an important role during the assembly process. The assembled AgNW film fabricated via three times orthogonal dip-coating at a water-bath temperature of 80 °C has a sheet resistance of 11.4 Ω sq(-1) with 89.9% transmittance at 550 nm. Moreover, the root mean square (RMS) of this assembled AgNW film was only 15.6 nm which is much lower than the spin-coated random AgNW film (37.6 nm) with a similar sheet resistance. This facile assembly route provides a new way for manufacturing and tailoring ordered nanowire-based devices.

Enhanced photovoltaic performance of organic/silicon nanowire hybrid solar cells by solution-evacuated method.

A method has been developed to fabricate organic-inorganic hybrid heterojunction solar cells based on n-type silicon nanowire (SiNW) and poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) hybrid structures by evacuating the PEDOT:PSS solution with dip-dropping on the top of SiNWs before spin-coating (solution-evacuating). The coverage and contact interface between PEDOT:PSS and SiNW arrays can be dramatically enhanced by optimizing the solution-evacuated time. The maximum power conversion efficiency (PCE) reaches 9.22% for a solution-evacuated time of 2 min compared with 5.17% for the untreated pristine device. The improvement photovoltaic performance is mainly attributed to better organic coverage and contact with an n-type SiNW surface.

Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer.

An InGaN/GaN blue light-emitting diode (LED) structure and an InGaN/GaN blue-violet LED structure were grown sequentially on the same sapphire substrate by metal-organic chemical vapor deposition. It was found that the insertion of an n-type AlGaN layer below the dual blue-emitting active layers showed better spectral stability at the different driving current relative to the traditional p-type AlGaN electron-blocking layer. In addition, color rendering index of a Y3Al5O12:Ce3+ phosphor-converted white LED based on a dual blue-emitting chip with n-type AlGaN reached 91 at 20 mA, and Commission Internationale de L'Eclairage coordinates almost remained at the same point from 5 to 60 mA.